公开(公告)号：US20230194478A1

公开(公告)日：2023-06-22

申请号：US18050178

申请日：2022-10-27

Applicant: Infineon Technologies AG

Inventor： Derek Debie ,  Klaus Elian ,  Ludwig Heitzer ,  David Tumpold ,  Jens Pohl ,  Cyrus Ghahremani ,  Thorsten Meyer ,  Christian Geissler ,  Andreas Allmeier

IPC: G01N29/22 ,  G01N29/02 ,  G01N25/00 ,  G01N29/24

CPC classification number: G01N29/222 ,  G01N29/02 ,  G01N25/00 ,  G01N29/2425 ,  G01N2291/021

Abstract: A radiation source device includes at least one membrane layer, a radiation source structure to emit electromagnetic or infrared radiation, a substrate and a spacer structure, wherein the substrate and the at least one membrane form a chamber, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber, and wherein the radiation source structure is arranged between the at least one membrane layer and the substrate.

公开(公告)号：US11145563B2

公开(公告)日：2021-10-12

申请号：US16447610

申请日：2019-06-20

Applicant: Infineon Technologies AG

Inventor： Christian Geissler ,  Walter Hartner ,  Claus Waechter ,  Maciej Wojnowski

IPC: H01L23/31 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00

Abstract: A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.

公开(公告)号：US10916484B2

公开(公告)日：2021-02-09

申请号：US16014745

申请日：2018-06-21

Applicant: Infineon Technologies AG

Inventor： Robert Fehler ,  Francesca Arcioni ,  Christian Geissler ,  Walter Hartner ,  Gerhard Haubner ,  Thorsten Meyer ,  Martin Richard Niessner ,  Maciej Wojnowski

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L21/683 ,  H01L23/538 ,  H01L21/56

Abstract: An electronic device is disclosed. In one example, the electronic device includes a solder ball, a dielectric layer comprising an opening, and a redistribution layer (RDL) comprising an RDL pad connected with the solder ball. The RDL pad including at least one void, the void being disposed at least in partial in an area of the RDL pad laterally outside of the opening of the dielectric layer.

公开(公告)号：US10793429B2

公开(公告)日：2020-10-06

申请号：US16748087

申请日：2020-01-21

Applicant: Infineon Technologies AG

Inventor： Matthias Steiert ,  Christian Geissler ,  Karolina Zogal

IPC: B81C1/00 ,  H01L23/31 ,  B32B15/04 ,  B81B7/00

Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.

公开(公告)号：US20180374769A1

公开(公告)日：2018-12-27

申请号：US16014745

申请日：2018-06-21

Applicant: Infineon Technologies AG

Inventor： Robert Fehler ,  Francesca Arcioni ,  Christian Geissler ,  Walter Hartner ,  Gerhard Haubner ,  Thorsten Meyer ,  Martin Richard Niessner ,  Maciej Wojnowski

IPC: H01L23/31 ,  H01L23/00 ,  H01L21/683 ,  H01L21/56 ,  H01L23/498 ,  H01L23/538

Abstract: An electronic device is disclosed. In one example, the electronic device includes a solder ball, a dielectric layer comprising an opening, and a redistribution layer (RDL) comprising an RDL pad connected with the solder ball. The RDL pad including at least one void, the void being disposed at least in partial in an area of the RDL pad laterally outside of the opening of the dielectric layer.