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18 条记录 (耗时 0.015 秒)

    METHOD FOR PRODUCING A MEMS SENSOR, AND MEMS SENSOR
    2.
    发明申请
    METHOD FOR PRODUCING A MEMS SENSOR, AND MEMS SENSOR 审中-公开

    公开(公告)号：US20190055117A1

    公开(公告)日：2019-02-21

    申请号：US16105281

    申请日：2018-08-20

    申请人： Infineon Technologies AG

    发明人： Matthias Steiert

    IPC分类号： B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H04R31/00 ,  H04R19/04

    摘要： In accordance with an embodiment, a MEMS structure is produced on a front side of a substrate. A decoupling structure which has recesses is produced in the substrate, which decoupling structure decouples a first region from a second region of the substrate in terms of stresses. In a rear side, situated opposite the front side, of the substrate, a first cavity is produced by means of a first etching process and a second cavity is produced by means of a second etching process. The first cavity and the second cavity are produced such that the second cavity encompasses the first cavity and such that the second cavity adjoins a base region of the MEMS structure and a base region of the decoupling structure.

    Method for producing packaged MEMS assemblies at the wafer level, and packaged MEMS assembly
    6.
    发明授权
    Method for producing packaged MEMS assemblies at the wafer level, and packaged MEMS assembly 有权

    公开(公告)号：US10793429B2

    公开(公告)日：2020-10-06

    申请号：US16748087

    申请日：2020-01-21

    申请人： Infineon Technologies AG

    发明人： Matthias Steiert ,  Christian Geissler ,  Karolina Zogal

    IPC分类号： B81C1/00 ,  H01L23/31 ,  B32B15/04 ,  B81B7/00

    摘要： A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.

    DIE STACK ARRANGEMENT AND METHOD FOR PRODUCING SAME
    7.
    发明申请
    DIE STACK ARRANGEMENT AND METHOD FOR PRODUCING SAME 审中-公开

    公开(公告)号：US20190304945A1

    公开(公告)日：2019-10-03

    申请号：US16366490

    申请日：2019-03-27

    申请人： Infineon Technologies AG

    发明人： Matthias Steiert ,  Karolina Gierl

    IPC分类号： H01L23/00 ,  B81B7/02 ,  H01L25/065

    摘要： A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

    Apparatus with a high heat capacity and method for producing the same
    8.
    发明授权
    Apparatus with a high heat capacity and method for producing the same 有权

    公开(公告)号：US10377626B2

    公开(公告)日：2019-08-13

    申请号：US15957349

    申请日：2018-04-19

    申请人： Infineon Technologies AG

    发明人： Bernd Goller ,  Matthias Steiert

    IPC分类号： H01L23/02 ,  B81B7/00 ,  B81C1/00 ,  H04R19/04 ,  H04R1/08 ,  H04R19/00

    摘要： The present disclosure relates to an apparatus comprising a substrate, wherein a MEMS module is arranged on a first side of the substrate, the output signal from said MEMS module changing in the event of a change in temperature. Furthermore, the apparatus has a housing structure which is arranged on a first side of the substrate and has a recess in which the MEMS module is arranged. The apparatus also has a layer which is applied to the housing structure and increases the heat capacity of the apparatus. The present disclosure also relates to a method for producing an apparatus of this kind.

    MEMS SOUND TRANSDUCER ELEMENT AND METHOD FOR PRODUCING A MEMS SOUND TRANSDUCER ELEMENT
    10.
    发明申请
    MEMS SOUND TRANSDUCER ELEMENT AND METHOD FOR PRODUCING A MEMS SOUND TRANSDUCER ELEMENT 审中-公开

    公开(公告)号：US20180295458A1

    公开(公告)日：2018-10-11

    申请号：US15946443

    申请日：2018-04-05

    申请人： Infineon Technologies AG

    发明人： Matthias Steiert ,  Horst Theuss

    IPC分类号： H04R31/00 ,  B81B7/00 ,  B81C1/00 ,  H04R19/04 ,  H04R19/02 ,  H04R7/06

    摘要： A method for producing a MEMS sound transducer element includes, inter alia, providing a first substrate. The first substrate has a first substrate side, an opposite second substrate side and a membrane layer arranged on the first substrate side. A further method step includes performing a first etching from the second substrate side in a first surface section that is situated opposite the membrane layer, as far as a first depth. A further method step includes performing a second etching of the first substrate from the second substrate side in a second surface section in order to expose the membrane layer in the first surface section and to produce a back volume for the membrane layer, where the second surface section is larger than the first surface section and includes the first surface section.