公开(公告)号：US20210193560A1

公开(公告)日：2021-06-24

申请号：US16718443

申请日：2019-12-18

Applicant: Infineon Technologies AG

Inventor： Stuart Cardwell ,  Chee Yang Ng ,  Josef Maerz ,  Clive O'Dell ,  Mark Pavier

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/522

Abstract: A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.

公开(公告)号：US12068274B2

公开(公告)日：2024-08-20

申请号：US17110755

申请日：2020-12-03

Applicant: Infineon Technologies AG

Inventor： Mark Pavier

IPC: H01L23/00

CPC classification number: H01L24/73 ,  H01L24/92 ,  H01L2224/73221 ,  H01L2224/92166

Abstract: A semiconductor device includes a first carrier, a first external contact, a second external contact, and a first semiconductor die. The first semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The first semiconductor die is disposed with the first main face on the first carrier. A clip connects the second contact pad and the second external contact. A first wire is connected with the first external contact. The first wire is disposed at least partially under the clip.

公开(公告)号：US12057376B2

公开(公告)日：2024-08-06

申请号：US17086976

申请日：2020-11-02

Applicant: Infineon Technologies AG

Inventor： Azlina Kassim ,  Thai Kee Gan ,  Mark Pavier ,  Ke Yan Tean ,  Mohd Hasrul Zulkifli

IPC: H01L23/495 ,  H01L23/31

CPC classification number: H01L23/49503 ,  H01L23/3107 ,  H01L23/49517 ,  H01L23/49524 ,  H01L23/49568

Abstract: An interconnect clip includes a die attach pad that comp includes rises a die attach surface at an inner side of the interconnect clip, a heat dissipation pad that includes a heat dissipation surface at an outer side of the interconnect clip, and a lead contact pad that includes a lead contact surface at an inner side of the interconnect clip or at an outer side of the interconnect clip. The outer side of the interconnect clip in the lead contact pad faces and is spaced apart from the inner side of the interconnect clip in the heat dissipation pad, and the inner side of the interconnect clip in the lead contact pad faces and is spaced apart from the outer side of the interconnect clip in the die attach pad.

公开(公告)号：US20210172862A1

公开(公告)日：2021-06-10

申请号：US16951365

申请日：2020-11-18

Applicant: Infineon Technologies AG

Inventor： Siyuan Qi ,  Joachim Eder ,  Christoph Glacer ,  Dominic Maier ,  Mark Pavier

IPC: G01N21/17 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00

Abstract: The present disclosure concerns an emitter package for a photoacoustic sensor, the emitter package comprising a MEMS infrared radiation source for emitting pulsed infrared radiation in a first wavelength range. The MEMS infrared radiation source may be arranged on a substrate. The emitter package may further comprise a rigid wall structure being arranged on the substrate and laterally surrounding a periphery of the MEMS infrared radiation source. The emitter package may further comprise a lid structure being attached to the rigid wall structure, the lid structure comprising a filter structure for filtering the infrared radiation emitted from the MEMS infrared radiation source and for providing a filtered infrared radiation in a reduced second wavelength range.