公开(公告)号：US11417830B2

公开(公告)日：2022-08-16

申请号：US16024709

申请日：2018-06-29

申请人： Intel Corporation

发明人： Tanay Gosavi ,  Sasikanth Manipatruni ,  Chia-Ching Lin ,  Gary Allen ,  Kaan Oguz ,  Kevin O'Brien ,  Noriyuki Sato ,  Ian Young ,  Dmitri Nikonov

IPC分类号： H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10

摘要： Embodiments herein relate to magnetically doping a spin orbit torque electrode (SOT) in a magnetic random access memory apparatus. In particular, the apparatus may include a free layer of a magnetic tunnel junction (MTJ) coupled to a SOT electrode that is magnetically doped to apply an effective magnetic field on the free layer, where the free layer has a magnetic polarization in a first direction and where current flowing through the magnetically doped SOT electrode is to cause the magnetic polarization of the free layer to change to a second direction that is substantially opposite to the first direction.

公开(公告)号：US11276730B2

公开(公告)日：2022-03-15

申请号：US16246360

申请日：2019-01-11

申请人： Intel Corporation

发明人： Kevin O'Brien ,  Christopher Wiegand ,  Tofizur Rahman ,  Noriyuki Sato ,  Gary Allen ,  James Pellegren ,  Angeline Smith ,  Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Benjamin Buford ,  Ian Young

IPC分类号： H01L27/22 ,  H01L43/04 ,  H01L43/14 ,  H01L43/08 ,  H01L43/10

摘要： A perpendicular spin orbit memory device includes a first electrode having a magnetic material and platinum and a material layer stack on a portion of the first electrode. The material layer stack includes a free magnet, a fixed magnet above the first electrode, a tunnel barrier between the free magnet and the fixed magnet and a second electrode coupled with the fixed magnet.

公开(公告)号：US20200343301A1

公开(公告)日：2020-10-29

申请号：US16396451

申请日：2019-04-26

申请人： Intel Corporation

发明人： Benjamin Buford ,  Angeline Smith ,  Noriyuki Sato ,  Tanay Gosavi ,  Kaan Oguz ,  Christopher Wiegand ,  Kevin O'Brien ,  Tofizur Rahman ,  Gary Allen ,  Sasikanth Manipatruni ,  Emily Walker

IPC分类号： H01L27/22 ,  H01L43/14 ,  H01L43/08 ,  H01L43/06 ,  H01L43/04

摘要： A memory apparatus includes a first electrode having a spin orbit material. The memory apparatus further includes a first memory device on a portion of the first electrode and a first dielectric adjacent to a sidewall of the first memory device. The memory apparatus further includes a second memory device on a portion of the first electrode and a second dielectric adjacent to a sidewall of the second memory device. A second electrode is on and in contact with a portion of the first electrode, where the second electrode is between the first memory device and the second memory device. The second electrode has a lower electrical resistance than an electrical resistance of the first electrode. The memory apparatus further includes a first interconnect structure and a second interconnect, each coupled with the first electrode.

公开(公告)号：US20190305216A1

公开(公告)日：2019-10-03

申请号：US15942231

申请日：2018-03-30

申请人： Intel Corporation

发明人： Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Ian Young ,  Kevin O'Brien ,  Gary Allen ,  Noriyuki Sato

IPC分类号： H01L43/10 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  G11C11/16 ,  H01L27/22

摘要： An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises an antiferromagnetic (AFM) material which is doped with a doping material (Pt, Ni, Co, or Cr) and a structure adjacent to the interconnect such that the magnetic junction and the structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.