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    Traveling waveguide in Mach-Zehnder modulator to facilitate phase match and impedance match
    11.
    发明授权
    Traveling waveguide in Mach-Zehnder modulator to facilitate phase match and impedance match 有权

    公开(公告)号：US12189264B2

    公开(公告)日：2025-01-07

    申请号：US17397724

    申请日：2021-08-09

    Applicant: Intel Corporation

    Inventor： Jianying Zhou ,  Jin Hong

    IPC: G02F1/21 ,  G02F1/225

    Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques directed to phase match and impedance match to enable a higher baud rate for ultra-high-speed TW-MZM for 100 Gbaud or above for PAM applications, and/or 120 Gbaud or above for QAM applications. Embodiments described herein may include ultra-high-speed TW-MZM based on differential signal-to-signal (SS) TW using a push-pull PN structure. These embodiments facilitate high speeds for a TW-MZM due to decreased complexity by eliminating a ground in the TW. Other embodiments may be described and/or claimed.

    Integrated Silicon Photonics Transceivers Enabling Ultra-High-Speed High Dense Input/Output And Interconnect For Terabyte Per Second Optical Interconnect
    14.
    发明申请
    Integrated Silicon Photonics Transceivers Enabling Ultra-High-Speed High Dense Input/Output And Interconnect For Terabyte Per Second Optical Interconnect 有权

    公开(公告)号：US20220003948A1

    公开(公告)日：2022-01-06

    申请号：US17481538

    申请日：2021-09-22

    Applicant: Intel Corporation

    Inventor： Jianying Zhou ,  Jin Hong

    IPC: G02B6/42

    Abstract: In one embodiment, an optical transceiver includes: a photonic integrated circuit (PIC) formed on a semiconductor die having a first side and a second side opposite the first side, where the first side includes a first optical circuit and a second optical circuit and the second side is to electrically couple with a substrate. The PIC may further have one or more through silicon vias (TSVs) formed through the semiconductor die to electrically couple the first side with the second side, where at least one of the TSVs is to enable electrical coupling between a first other die adapted to the first side and a second other die. Other embodiments are described and claimed.

    HETEROGENEOUSLY INTEGRATED SILICON PHOTONICS NEURAL NETWORK CHIP
    16.
    发明申请
    HETEROGENEOUSLY INTEGRATED SILICON PHOTONICS NEURAL NETWORK CHIP 有权

    公开(公告)号：US20210132650A1

    公开(公告)日：2021-05-06

    申请号：US16950828

    申请日：2020-11-17

    Applicant: Intel Corporation

    Inventor： Wenhua Lin ,  Casimir Wierzynski ,  Amir Khosrowshahi ,  Bharadwaj Parthasarathy ,  Jin Hong ,  Robert Blum

    IPC: G06E3/00 ,  G06N3/067 ,  G02F1/365

    Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for a photonics integrated circuit (IC) for an optical neural network (ONN). In embodiments, the photonics IC includes monolithically optoelectronic components in a single semiconductor substrate including a combination of one or more of integrated array of light sources, a plurality of optical modulators, an optical unitary matrix multiplier, non-linear optical amplifiers or attenuators, and a plurality of photodetectors. In embodiments, the optical unitary matrix multiplier comprises a plurality of 2×2 unitary optical matrices optically interconnected, wherein each 2×2 unitary optical matrix comprises a plurality of phase shifters. In embodiments, each 2×2 unitary optical matrix is to phase shift, split, and/or combine one or more of the optical signal inputs. Other embodiments may be described and/or claimed.

    OPTICAL ARCHITECTURE WITH HYBRID ON-SILICON III-V MODULATOR
    17.
    发明申请
    OPTICAL ARCHITECTURE WITH HYBRID ON-SILICON III-V MODULATOR 审中-公开

    公开(公告)号：US20200278589A1

    公开(公告)日：2020-09-03

    申请号：US16877113

    申请日：2020-05-18

    Applicant: Intel Corporation

    Inventor： Jin Hong

    IPC: G02F1/225 ,  H04B10/548

    Abstract: Embodiments may relate to an electronic device that includes a modulator to modulate an in-phase portion of an input signal and a quadrature portion of the input signal. The modulator may include a III-V material on a silicon substrate. In some embodiments, the III-V material may include, for example, indium phosphide (InP). Other embodiments may be described or claimed.

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