公开(公告)号：US20240388067A1

公开(公告)日：2024-11-21

申请号：US18787825

申请日：2024-07-29

Applicant: Intel Corporation

Inventor： Jin Hong ,  Ranjeet Kumar ,  Meer Nazmus Sakib ,  Haisheng Rong ,  Kimchau Nguyen ,  Mengyuan Huang ,  Aliasghar Eftekhar ,  Christian Malouin ,  Siamak Amiralizadeh Asl ,  Saeed Fathololoumi ,  Ling Liao ,  Yuliya Akulova ,  Olufemi Dosunmu ,  Ansheng Liu

IPC: H01S5/50 ,  G02B27/28 ,  H01S5/026 ,  H01S5/30

Abstract: Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.

公开(公告)号：US12057386B2

公开(公告)日：2024-08-06

申请号：US17024507

申请日：2020-09-17

Applicant: Intel Corporation

Inventor： Wei Qian ,  Cung Tran ,  Sungbong Park ,  John Heck ,  Mark Isenberger ,  Seth Slavin ,  Mengyuan Huang ,  Kelly Magruder ,  Harel Frish ,  Reece Defrees ,  Zhi Li

IPC: H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5223 ,  H01L23/528

Abstract: Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.

公开(公告)号：US20220107461A1

公开(公告)日：2022-04-07

申请号：US17523668

申请日：2021-11-10

Applicant: Intel Corporation

Inventor： Olufemi I. Dosunmu ,  Zhi Li ,  Mengyuan Huang ,  Aliasghar Eftekhar

IPC: G02B6/136 ,  G02B6/12 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/028 ,  H01L31/18

Abstract: In one embodiment, an apparatus includes a substrate, an oxide layer on the substrate, a silicon layer on the oxide layer, which includes a waveguide region and etched regions adjacent to the waveguide region, a germanium layer on the silicon layer and adjacent the waveguide region of the silicon layer, and a resistive element adjacent to the germanium layer to provide heat to the germanium layer in response to a current applied to the resistive element.

公开(公告)号：US20220019098A1

公开(公告)日：2022-01-20

申请号：US17131470

申请日：2020-12-22

Applicant: Intel Corporation

Inventor： Mengyuan Huang ,  David Patel ,  Kejia Li ,  Wei Qian ,  Ansheng Liu

IPC: G02F1/025

Abstract: An optical modulator includes a substrate, a first dielectric layer over the substrate, a rib waveguide including a PN junction on the first dielectric, a second dielectric layer over the rib waveguide and a stressor layer including a metal, where the first or the second dielectric is between the stressor layer and the PN junction.

公开(公告)号：US12298560B2

公开(公告)日：2025-05-13

申请号：US17523668

申请日：2021-11-10

Applicant: Intel Corporation

Inventor： Olufemi I. Dosunmu ,  Zhi Li ,  Mengyuan Huang ,  Aliasghar Eftekhar

IPC: G02B6/136 ,  G02B6/12 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/028 ,  H01L31/18

Abstract: In one embodiment, an apparatus includes a substrate, an oxide layer on the substrate, a silicon layer on the oxide layer, which includes a waveguide region and etched regions adjacent to the waveguide region, a germanium layer on the silicon layer and adjacent the waveguide region of the silicon layer, and a resistive element adjacent to the germanium layer to provide heat to the germanium layer in response to a current applied to the resistive element.

公开(公告)号：US11940678B2

公开(公告)日：2024-03-26

申请号：US17131470

申请日：2020-12-22

Applicant: Intel Corporation

Inventor： Mengyuan Huang ,  David Patel ,  Kejia Li ,  Wei Qian ,  Ansheng Liu

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2202/105

Abstract: An optical modulator includes a substrate, a first dielectric layer over the substrate, a rib waveguide including a PN junction on the first dielectric, a second dielectric layer over the rib waveguide and a stressor layer including a metal, where the first or the second dielectric is between the stressor layer and the PN junction.

公开(公告)号：US20220416097A1

公开(公告)日：2022-12-29

申请号：US17358921

申请日：2021-06-25

Applicant: Intel Corporation

Inventor： David Kohen ,  Kelly Magruder ,  Parastou Fakhimi ,  Zhi Li ,  Cung Tran ,  Wei Qian ,  Mark Isenberger ,  Mengyuan Huang ,  Harel Frish ,  Reece DeFrees ,  Ansheng Liu

IPC: H01L31/0232 ,  G02B6/12 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

Abstract: A photodetector structure over a partial length of a silicon waveguide structure within a photonic integrated circuit (PIC) chip. The photodetector structure is embedded within a cladding material surrounding the waveguide structure. The photodetector structure includes an absorption region, for example comprising Ge. A sidewall of the cladding material may be lined with a sacrificial spacer. After forming the absorption region, the sacrificial spacer may be removed and passivation material formed over a sidewall of the absorption region. Between the absorption region an impurity-doped portion of the waveguide structure there may be a carrier multiplication region, for example comprising crystalline silicon. If present, edge facets of the carrier multiplication region may be protected by a spacer material during the formation of an impurity-doped charge carrier layer. Occurrence of edge facets may be mitigated by embedding a portion of the photodetector structure with a thickness of the waveguide structure.

公开(公告)号：US20240120651A1

公开(公告)日：2024-04-11

申请号：US17957752

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Zhen Zhou ,  Tae Young Yang ,  Timo Huusari ,  Renzhi Liu ,  Wei Qian ,  Mengyuan Huang ,  Jason Mix

IPC: H01Q3/26 ,  H01L23/498 ,  H01L23/66

CPC classification number: H01Q3/2676 ,  H01L23/49827 ,  H01L23/66 ,  H01L2223/6677

Abstract: Photonically steered impedance surface antennas are disclosed. A disclosed example apparatus includes a semiconductor substrate to be communicatively coupled to a radio frequency (RF) source, an at least partially transparent dielectric layer, the semiconductor substrate at a first side of the at least partially transparent dielectric layer, an at least partially transparent conductive film at a second side of the at least partially transparent dielectric layer that is opposite the first side of the at least partially transparent dielectric layer, and an illumination source to illuminate at least a portion of the semiconductor substrate to generate a photoinduced solid-state plasma pattern that beam steers an RF signal corresponding to the RF source.