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公开(公告)号:US20240388067A1
公开(公告)日:2024-11-21
申请号:US18787825
申请日:2024-07-29
Applicant: Intel Corporation
Inventor: Jin Hong , Ranjeet Kumar , Meer Nazmus Sakib , Haisheng Rong , Kimchau Nguyen , Mengyuan Huang , Aliasghar Eftekhar , Christian Malouin , Siamak Amiralizadeh Asl , Saeed Fathololoumi , Ling Liao , Yuliya Akulova , Olufemi Dosunmu , Ansheng Liu
Abstract: Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.
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公开(公告)号:US12222552B2
公开(公告)日:2025-02-11
申请号:US17133347
申请日:2020-12-23
Applicant: Intel Corporation
Inventor: Duanni Huang , Saeed Fathololoumi , Meer Nazmus Sakib , Mohammad Montazeri Najafabadi , Chaoxuan Ma , David Hui , Taehwan Kim , Ling Liao , Hao Li , Ganesh Balamurugan , Haisheng Rong , Aliasghar Eftekhar
Abstract: The present disclosure is directed to photonic wavelength division multiplexing (WDM) receivers with polarization diversity and/or low reflectance. In embodiments, a WDM receiver is provided with a splitter, a plurality of waveguides and a plurality of photodetectors in series. The waveguides having particular equal path lengths relationship from the splitter to respective ones of the photodetectors. In other embodiments, the WDM receiver is provided with a splitter, a looped waveguide, a plurality of photodetectors, and a plurality of variable optical attenuators (VOAs). The VOAs are configured to suppress reflection of signal beams back to the transmitter. In various embodiments, the WDM receiver is a receiver sub-assembly of a silicon photonic transceiver disposed in a silicon package. Other embodiments may be described and/or claimed.
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公开(公告)号:US20220107461A1
公开(公告)日:2022-04-07
申请号:US17523668
申请日:2021-11-10
Applicant: Intel Corporation
Inventor: Olufemi I. Dosunmu , Zhi Li , Mengyuan Huang , Aliasghar Eftekhar
IPC: G02B6/136 , G02B6/12 , H01L31/0232 , H01L31/024 , H01L31/028 , H01L31/18
Abstract: In one embodiment, an apparatus includes a substrate, an oxide layer on the substrate, a silicon layer on the oxide layer, which includes a waveguide region and etched regions adjacent to the waveguide region, a germanium layer on the silicon layer and adjacent the waveguide region of the silicon layer, and a resistive element adjacent to the germanium layer to provide heat to the germanium layer in response to a current applied to the resistive element.
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公开(公告)号:US20210318561A1
公开(公告)日:2021-10-14
申请号:US17358256
申请日:2021-06-25
Applicant: Intel Corporation
Inventor: Meer Nazmus Sakib , Saeed Fathololoumi , Harel Frish , John Heck , Eddie Bononcini , Reece Defrees , Stanley J. Dobek , Aliasghar Eftekhar , Walter Garay , Lingtao Liu , Wei Qian
Abstract: A method may include: forming a base layer on a substrate; forming a waveguide assembly on the base layer, where the waveguide assembly is surrounded by a cladding layer; forming a trench opening through the cladding layer and the base layer; forming an undercut void by etching the substrate through the trench opening, where the undercut void extends under the waveguide assembly and the base layer; and filling the trench opening with a filler to seal off the undercut void. Other embodiments are described and claimed.
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