公开(公告)号：US10996283B2

公开(公告)日：2021-05-04

申请号：US15727852

申请日：2017-10-09

Applicant: INTEL CORPORATION

Inventor： Sankaran M. Menon ,  Vasudev Bibikar ,  P. Reddy Sahajananda ,  Sunghyun Koh ,  Naveendran Balasingam

IPC: G01R31/40 ,  G01R31/50 ,  G05F1/10 ,  G01R31/317

Abstract: Described is an apparatus which comprises: a first voltage regulator (VR) having a reference input node; and a first multiplexer to provide a reference voltage to the reference input node and operable to select one of at least two different reference voltages as the reference voltage.

公开(公告)号：US10754413B2

公开(公告)日：2020-08-25

申请号：US15721772

申请日：2017-09-30

Applicant: Intel Corporation

Inventor： Vasudev Bibikar ,  Aswin Ramachandran ,  Chin Seng Lu ,  Moorthy Rajesh ,  Darren S. Crews

IPC: G06F1/32 ,  G06F1/26 ,  G06F1/3228 ,  G06F1/3296 ,  G06F1/3234 ,  G06F1/3287 ,  G06F9/30

Abstract: A computing device, system and method. The computing device includes a memory storing instructions, and a processing circuitry coupled to the memory. The processing circuitry is configured to execute the instructions to process a first control signal and a second control signal from respective first and second control pins of a computing platform. The processing circuitry is further to transition the computing platform, based on a combination of the first control signal and the second control signal and using at least one voltage pin on the platform, between a low power state and a retention power state without transitioning to an operational power state in between.

公开(公告)号：US20160285434A1

公开(公告)日：2016-09-29

申请号：US14667365

申请日：2015-03-24

Applicant: Intel Corporation

Inventor： Sankaran M. Menon ,  Vasudev Bibikar

IPC: H03K3/011 ,  H03K3/012 ,  G01R31/26 ,  H01L23/34 ,  H01L23/58

CPC classification number: G01R31/2637 ,  G06F1/3203 ,  H01L22/34 ,  H01L23/58

Abstract: A method and apparatus (e.g., semiconductor device) for setting voltages (e.g., guardbands) using “in situ,” or on-die, silicon measurements are described. In one embodiment the semiconductor device comprises: a process monitor to measure silicon parameters of the semiconductor device; and a controller coupled to the process monitor to set a voltage for use on at least a portion of the semiconductor device based on silicon process monitor measurements.

Abstract translation: 描述了使用“原地”或芯片上的硅测量来设置电压（例如，保护带）的方法和装置（例如，半导体器件）。 在一个实施例中，半导体器件包括：测量半导体器件的硅参数的工艺监控器; 以及控制器，其耦合到所述过程监视器，以基于硅过程监视器测量来设置在所述半导体器件的至少一部分上使用的电压。