公开(公告)号：US20160149129A1

公开(公告)日：2016-05-26

申请号：US14553632

申请日：2014-11-25

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak ,  Dipankar Pramanik

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The metal layer of the selector element can include conductive materials such as metal silicides, and metal silicon nitrides. Conductive materials of the MSM may include tantalum silicide, tantalum silicon nitride, titanium silicide, titanium silicon nitride, or combinations thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 选择元件的金属层可以包括诸如金属硅化物的导电材料和金属硅氮化物。 MSM的导电材料可以包括硅化钽，氮化钽，硅化钛，氮化钛或其组合。

公开(公告)号：US20160149128A1

公开(公告)日：2016-05-26

申请号：US14553443

申请日：2014-11-25

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak

IPC: H01L45/00

CPC classification number: H01L45/1286 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/149

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). A structure including diamond-like carbon (DLC) can be used to surround the semiconductor layer of the MSM stack. The high thermal conductivity of the DLC structure may serve to remove heat from the selector device while higher currents are flowing through the selector element. This may lead to improved reliability and improved endurance.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 可以使用包括类金刚石碳（DLC）的结构来围绕MSM堆叠的半导体层。 DLC结构的高热导率可用于在较高的电流流过选择器元件时从选择器装置移除热量。 这可能导致改进的可靠性和耐久性。

公开(公告)号：US20160148976A1

公开(公告)日：2016-05-26

申请号：US14554388

申请日：2014-11-26

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak ,  Dipankar Pramanik

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2409 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/145 ,  H01L45/149

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on a silicon semiconductor layer doped with both carbon and nitrogen. The metal layer of the selector element can include conductive materials such as carbon, tungsten, titanium nitride, or combinations thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于掺杂有碳和氮的硅半导体层。 选择元件的金属层可以包括诸如碳，钨，氮化钛或其组合的导电材料。

公开(公告)号：US20160141335A1

公开(公告)日：2016-05-19

申请号：US14546678

申请日：2014-11-18

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak

IPC: H01L27/24 ,  H01L29/165 ,  H01L29/06 ,  H01L29/45 ,  H01L29/417 ,  H01L29/16 ,  H01L29/861

CPC classification number: H01L27/2409 ,  G11C11/1659 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/222 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a trilayer stack of diamond like carbon/silicon/diamond like carbon. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 选择器元件的半导体层可以包括诸如碳/硅/金刚石的类似碳的类金刚石叠层。 MSM的导电材料可以包括钨，氮化钛，碳或它们的组合。

公开(公告)号：US09318531B1

公开(公告)日：2016-04-19

申请号：US14516273

申请日：2014-10-16

Applicant: Intermolecular, Inc.

Inventor： Monica Mathur ,  Mark Clark

IPC: H01L27/24 ,  H01L29/267 ,  H01L29/45 ,  H01L29/24

CPC classification number: H01L27/2409 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/224 ,  H01L27/2463 ,  H01L45/16

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a silicon carbide/silicon nitride nanolaminate stack. The semiconductor layer of the selector element can include a silicon carbon nitride/silicon nitride nanolaminate stack. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 选择器元件的半导体层可以包括碳化硅/氮化硅纳米层压体叠层。 选择元件的半导体层可以包括硅氮化硅/氮化硅纳米层叠体。 MSM的导电材料可以包括钨，氮化钛，碳或它们的组合。

公开(公告)号：US09246092B1

公开(公告)日：2016-01-26

申请号：US14554458

申请日：2014-11-26

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak ,  Dipankar Pramanik

IPC: H01L27/148 ,  H01L29/768 ,  H01L45/00

CPC classification number: H01L45/00 ,  H01L27/2409 ,  H01L27/2418 ,  H01L45/08 ,  H01L45/1233

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can include insulator layers between the semiconductor layer and the metal layers to lower the leakage current of the device. The metal layers of the selector element can include conductive materials such as tungsten, titanium nitride, or combinations thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以包括半导体层和金属层之间的绝缘体层，以降低器件的漏电流。 选择元件的金属层可以包括诸如钨，氮化钛或其组合的导电材料。