公开(公告)号：US09276210B1

公开(公告)日：2016-03-01

申请号：US14561212

申请日：2014-12-04

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar

IPC: H01L45/00 ,  H01L27/00

CPC classification number: H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16

Abstract: In a thin-film resistor stack (e.g. A ReRAM embedded resistor), a metallic barrier layer 1-5 nm thick protects an underlying or overlying ternary metal nitride layer from unwanted oxidation while having negligible effect on the resistance or height of the stack. For devices subjected to temperatures over 650 C after forming the stack, the metallic barrier layer may be iridium or ruthenium. For devices with temperatures kept below 650 C after forming the stack, the metallic barrier layer may be Al. The metallic barrier layer(s) and the ternary nitride layer may be formed in situ, for example by sputtering or atomic layer deposition.

Abstract translation: 在薄膜电阻器堆叠（例如A ReRAM嵌入式电阻器）中，1-5nm厚度的金属阻挡层保护下面或覆盖的三元金属氮化物层免受不希望的氧化，同时对堆叠的电阻或高度具有可忽略的影响。 对于在形成叠层之后经受650℃以上温度的器件，金属阻挡层可以是铱或钌。 对于在形成堆叠之后，温度保持在650℃以下的器件，金属阻挡层可以是Al。 金属阻挡层和三元氮化物层可以原位形成，例如通过溅射或原子层沉积。

公开(公告)号：US08981329B1

公开(公告)日：2015-03-17

申请号：US14548408

申请日：2014-11-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  David Chi

IPC: H01L29/02 ,  H01L45/00 ,  H01L49/02 ,  H01L27/24

CPC classification number: H01L45/146 ,  H01L21/28506 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2463 ,  H01L28/24 ,  H01L45/06 ,  H01L45/08 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641

Abstract: Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

Abstract translation: 本发明的实施例包括具有改进的器件性能和寿命的非易失性电阻随机存取存储器件的非易失性存储器件。 在一些实施例中，非易失性电阻随机存取存储器件包括二极管，金属氮化硅嵌入式电阻器和设置在第一电极层和第二电极层之间的电阻开关层。 在一些实施例中，形成电阻随机存取存储器件的方法包括形成二极管，形成金属氮化硅嵌入式电阻器，形成第一电极层，形成第二电极层，以及形成电阻开关层， 层和第二电极层。

公开(公告)号：US08969129B2

公开(公告)日：2015-03-03

申请号：US14464171

申请日：2014-08-20

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Randall J. Higuchi ,  Mihir Tendulkar

IPC: H01L29/02 ,  H01L45/00 ,  H01L27/24

CPC classification number: C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括与该电阻器串联连接的嵌入式电阻器和电阻开关层。 电阻器被配置为通过限制通过电阻式开关层的电流来防止电池的过度编程。 与电阻开关层不同，为了存储数据而改变其电阻，嵌入式电阻器在电池工作期间保持基本恒定的电阻。 嵌入式电阻器由氮化钽和氮化硅形成。 可以特别地选择钽和硅的原子比以产生具有所需密度和电阻率的电阻器以及当经受各种退火条件时保持非晶体的能力。 嵌入式电阻器还可以用作扩散阻挡层并且防止元件在电极和电阻开关层中的一个之间的迁移。

公开(公告)号：US20140377931A1

公开(公告)日：2014-12-25

申请号：US14480025

申请日：2014-09-08

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  Randall J. Higuchi ,  Chien-Lan Hsueh

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/165 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.

公开(公告)号：US08796103B2

公开(公告)日：2014-08-05

申请号：US13721476

申请日：2012-12-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L21/16

CPC classification number: H01L45/08 ,  H01L27/2463 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1633

Abstract: Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.

Abstract translation: 提供了形成包括电阻切换层的非易失性存储元件的方法。 一种方法包括通过退火将氧从前体层扩散到一个或多个反应电极。 存储元件中的至少一个电极是反应性的，而另一个电极可能是惰性的。 作为该扩散的结果，前体层被转换成电阻切换层。 前体层可以最初包括化学计量的氧化物，其通常在氧空位产生之前不表现出电阻转换特性。 形成这种氧化物的金属可能比形成反应性电极的金属更具电负性。 至少在退火之前，反应电极可以基本上不含氧。 在氢气存在下，可以在250-400℃下进行退火。 这些方法简化了过程控制，并且可以用于形成包括小于20埃厚的电阻开关层的非易失性存储元件。

公开(公告)号：US20140175360A1

公开(公告)日：2014-06-26

申请号：US13721358

申请日：2012-12-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  Vidyut Gopal ,  Imran Hashim ,  Randall J. Higuchi ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells having bi-layered metal oxide structures. The layers of a bi-layered structure may have different compositions and thicknesses. Specifically, one layer may be thinner than the other layer, sometimes as much as 5 to 20 times thinner. The thinner layer may be less than 30 Angstroms thick or even less than 10 Angstroms thick. The thinner layer is generally more oxygen rich than the thicker layer. Oxygen deficiency of the thinner layer may be less than 5 atomic percent or even less than 2 atomic percent. In some embodiments, a highest oxidation state metal oxide may be used to form a thinner layer. The thinner layer typically directly interfaces with one of the electrodes, such as an electrode made from doped polysilicon. Combining these specifically configured layers into the bi-layered structure allows improving forming and operating characteristics of ReRAM cells.

Abstract translation: 提供了具有双层金属氧化物结构的电阻随机存取存储器（ReRAM）单元。 双层结构的层可以具有不同的组成和厚度。 具体地说，一层可以比另一层薄一些，有时可以减薄5至20倍。 较薄的层可以小于30埃厚或甚至小于10埃厚。 较薄的层通常比较厚的层富氧。 较薄层的缺氧可能小于5原子％或甚至小于2原子％。 在一些实施方案中，可以使用最高氧化态金属氧化物来形成较薄的层。 较薄的层通常直接与一个电极（例如由掺杂多晶硅制成的电极）接合。 将这些特定配置的层组合成双层结构允许改善ReRAM单元的成形和操作特性。

公开(公告)号：US09243321B2

公开(公告)日：2016-01-26

申请号：US14143358

申请日：2013-12-30

Applicant: Intermolecular Inc.

Inventor： Mihir Tendulkar

IPC: H01L21/44 ,  C23C14/58 ,  C23C14/06 ,  C23C14/35 ,  H01L21/3205

CPC classification number: C23C14/5806 ,  C23C14/0641 ,  C23C14/351 ,  C23C14/352 ,  H01L21/32051 ,  H01L21/76858 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L2924/1435

Abstract: Ternary metal nitride layers suitable for thin-film resistors are fabricated by forming constituent layers of complementary components (e.g., binary nitrides of the different metals, or a binary nitride of one metal and a metallic form of the other metal), then annealing the constituent layers to interdiffuse the materials, thus forming the ternary metal nitride. The constituent layers (e.g., 2-5 nm thick) may be sputtered from binary metal nitride targets, from metal targets in a nitrogen-containing ambient, or from metal targets in an inert ambient. Optionally, a nitrogen-containing ambient may also be used for the annealing. The annealing may be 10 seconds to 10 minutes at 500-1000° C. and may also process another component on the same substrate (e.g., activate a diode).

公开(公告)号：US20150188044A1

公开(公告)日：2015-07-02

申请号：US14140668

申请日：2013-12-26

Applicant: Intermolecular Inc.

Inventor： Yun Wang ,  Mihir Tendulkar

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The ReRAM cells may include a first layer formed on a substrate. The first layer may be operable as a bottom electrode. The ReRAM cells may also include a second layer formed over the first layer. The second layer may be operable as a variable resistance layer configured to switch reversibly between at least a first resistive state and a second resistive state. The ReRAM cells may further include a third layer formed over the second layer. The third layer may have an electrical resistivity that is substantially constant. Moreover, the third layer may include a ternary metal carbide. The ReRAM cells may also include a fourth layer formed over the third layer. The fourth layer may be operable as a top electrode.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元可以包括形成在基板上的第一层。 第一层可以用作底部电极。 ReRAM单元还可以包括形成在第一层上的第二层。 第二层可以用作可配置为在至少第一电阻状态和第二电阻状态之间可逆地切换的可变电阻层。 ReRAM单元还可以包括形成在第二层上的第三层。 第三层可具有基本恒定的电阻率。 此外，第三层可以包括三元金属碳化物。 ReRAM单元还可以包括形成在第三层上的第四层。 第四层可以用作顶部电极。

公开(公告)号：US08921154B1

公开(公告)日：2014-12-30

申请号：US14468687

申请日：2014-08-26

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  David Chi

IPC: H01L29/02 ,  H01L45/00 ,  H01L49/02 ,  H01L21/285

CPC classification number: H01L45/146 ,  H01L21/28506 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2463 ,  H01L28/24 ,  H01L45/06 ,  H01L45/08 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641

Abstract: Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

Abstract translation: 本发明的实施例包括具有改进的器件性能和寿命的非易失性电阻随机存取存储器件的非易失性存储器件。 在一些实施例中，非易失性电阻随机存取存储器件包括二极管，金属氮化硅嵌入式电阻器和设置在第一电极层和第二电极层之间的电阻开关层。 在一些实施例中，形成电阻随机存取存储器件的方法包括形成二极管，形成金属氮化硅嵌入式电阻器，形成第一电极层，形成第二电极层，以及形成电阻开关层， 层和第二电极层。

公开(公告)号：US08835890B2

公开(公告)日：2014-09-16

申请号：US14136219

申请日：2013-12-20

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Randall J. Higuchi ,  Mihir Tendulkar

IPC: H01L29/02 ,  H01L45/00 ,  H01L27/24

CPC classification number: C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括与该电阻器串联连接的嵌入式电阻器和电阻开关层。 电阻器被配置为通过限制通过电阻式开关层的电流来防止电池的过度编程。 与电阻开关层不同，为了存储数据而改变其电阻，嵌入式电阻器在电池工作期间保持基本恒定的电阻。 嵌入式电阻器由氮化钽和氮化硅形成。 可以特别地选择钽和硅的原子比以产生具有所需密度和电阻率的电阻器以及当经受各种退火条件时保持非晶体的能力。 嵌入式电阻器还可以用作扩散阻挡层并且防止元件在电极和电阻开关层中的一个之间的迁移。