公开(公告)号：US20150298965A1

公开(公告)日：2015-10-22

申请号：US14480051

申请日：2014-09-08

Applicant: INVENSENSE, INC.

Inventor： Julius Ming-Lin Tsai ,  Michael J. Daneman

IPC: B81B7/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B3/0029 ,  B81B2201/032 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00182 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0792

Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底，其包括：手柄层，包括第一表面和第二表面，所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底，包括：金属电极，被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。

公开(公告)号：US09114977B2

公开(公告)日：2015-08-25

申请号：US13687304

申请日：2012-11-28

Applicant: InvenSense, Inc.

Inventor： Michael J. Daneman ,  Martin Lim ,  Xiang Li ,  Li-Wen Hung

IPC: H01L29/87 ,  B81C3/00 ,  B81B3/00

CPC classification number: B81B3/0086 ,  B81B2207/07 ,  B81C3/001 ,  B81C2201/019

Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

Abstract translation: 公开了用于低电阻应用的MEMS器件。 在第一方面，MEMS器件包括MEMS晶片，其包括具有包含第一表面和第二表面的一个或多个腔的手柄晶片和沉积在手柄晶片的第二表面上的绝缘层。 MEMS器件还包括具有第三和第四表面的器件层，第三表面结合到处理晶片的第二表面的绝缘层; 和在第四表面上的金属导电层。 MEMS器件还包括结合到MEMS晶片的CMOS晶片。 CMOS晶片包括至少一个金属电极，使得在至少一个金属电极和金属导电层的至少一部分之间形成电连接。

公开(公告)号：US10294097B2

公开(公告)日：2019-05-21

申请号：US15291599

申请日：2016-10-12

Applicant: INVENSENSE, INC.

Inventor： Julius Ming-Lin Tsai ,  Michael J. Daneman

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00

Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

公开(公告)号：US09511994B2

公开(公告)日：2016-12-06

申请号：US14480051

申请日：2014-09-08

Applicant: INVENSENSE, INC.

Inventor： Julius Ming-Lin Tsai ,  Michael J. Daneman

IPC: H01L29/84 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B3/0029 ,  B81B2201/032 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00182 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0792

Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底，其包括：手柄层，包括第一表面和第二表面，所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底，包括：金属电极，被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。

公开(公告)号：US08564076B1

公开(公告)日：2013-10-22

申请号：US13754462

申请日：2013-01-30

Applicant: InvenSense, Inc.

Inventor： Kegang Huang ,  Jongwoo Shin ,  Martin Lim ,  Michael J. Daneman ,  Joseph Seeger

IPC: H01L27/14

CPC classification number: B81C1/00301 ,  B81B7/0064 ,  B81B2207/098 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/031

Abstract: A MEMS device is disclosed. The MEMS device comprises a MEMS substrate. The MEMS substrate includes a first semiconductor layer connected to a second semiconductor layer with a dielectric layer in between. MEMS structures are formed from the second semiconductor layer and include a plurality of first conductive pads. The MEMS device further includes a base substrate which includes a plurality of second conductive pads thereon. The second conductive pads are connected to the first conductive pads. Finally, the MEMS device includes a conductive connector formed through the dielectric layer of the MEMS substrate to provide electrical coupling between the first semiconductor layer and the second semiconductor layer. The base substrate is electrically connected to the second semiconductor layer and the first semiconductor layer.

Abstract translation: 公开了MEMS器件。 MEMS器件包括MEMS衬底。 MEMS基板包括连接到第二半导体层的第一半导体层，其间具有介电层。 MEMS结构由第二半导体层形成并且包括多个第一导电焊盘。 MEMS器件还包括在其上包括多个第二导电焊盘的基底基板。 第二导电焊盘连接到第一导电焊盘。 最后，MEMS器件包括通过MEMS衬底的电介质层形成的导电连接器，以提供第一半导体层和第二半导体层之间的电耦合。 基底基板电连接到第二半导体层和第一半导体层。