DRAM adjacent row disturb mitigation

    公开(公告)号:US10262717B2

    公开(公告)日:2019-04-16

    申请号:US15803710

    申请日:2017-11-03

    Abstract: The invention pertains to mitigation of row hammer attacks in DRAM integrated circuits. Apparatus and methods are disclosed for an embedded target row refresh (TRR) solution with modest overhead. In operation it is nearly transparent to the user. Except for enablement via the mode register and an increase in the average refresh rate on the order of half of one percent, no further user action is required. The stream of row addresses accompanying ACTIVE commands is monitored and filtered to only track addresses that occur at a dangerous rate and reject addresses that occur at less than a dangerous rate.

    On-chip impedance network with digital coarse and analog fine tuning

    公开(公告)号:US10164633B2

    公开(公告)日:2018-12-25

    申请号:US15645125

    申请日:2017-07-10

    Abstract: System and method for providing precision a self calibrating resistance circuit is described that provides for matching a reference resistor using dynamically configurable resistance networks. The resistor network is coupled to the connection, wherein the resistor network provides a configurable resistance across the connection. In addition, the resistor network comprises a digital resistor network and an analog resistor network. Also, the circuit includes control circuitry for configuring the configurable resistance based on a reference resistance of the reference resistor. The configurable resistance is configured by coarsely tuning the resistor network through the digital resistor network and fine tuning the resistor network through the analog resistor network.

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