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36 条记录 (耗时 0.027 秒)

    Liquid processing method, liquid processing apparatus and storage medium
    12.
    发明授权
    Liquid processing method, liquid processing apparatus and storage medium 有权
    液体处理方法，液体处理装置和储存介质

    公开(公告)号：US09111967B2

    公开(公告)日：2015-08-18

    申请号：US13446255

    申请日：2012-04-13

    申请人： Kenji Sekiguchi ,  Yasushi Fujii ,  Tetsuya Sakazaki

    发明人： Kenji Sekiguchi ,  Yasushi Fujii ,  Tetsuya Sakazaki

    IPC分类号： B08B9/00 ,  H01L21/67 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/768

    CPC分类号： H01L21/67051 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/76898

    摘要： Disclosed is a liquid processing method capable of rapidly penetrating a liquid chemical into a concave portion formed on the surface of a substrate with the chemical liquid. The liquid processing method includes wetting the inside of the concave portion by supplying an organic solvent having surface tension smaller than the chemical liquid to the substrate, and cleaning the inside of the concave portion with the chemical liquid by supplying a cleaning liquid including the chemical liquid to the substrate and substituting the liquid inside the concave portion with the chemical liquid.

    摘要翻译： 公开了一种液体处理方法，其能够将化学液体迅速地渗透到形成在基板表面上的凹部中。 液体处理方法包括通过向基板供给具有小于化学液体的表面张力的有机溶剂来润湿凹部的内部，并且通过提供包含化学液体的清洗液，用化学液体清洁凹部的内部 并用化学液体代替凹部内的液体。

    Substrate cleaning method and computer readable storage medium
    14.
    发明授权
    Substrate cleaning method and computer readable storage medium 有权
    基板清洗方法和计算机可读存储介质

    公开(公告)号：US08147617B2

    公开(公告)日：2012-04-03

    申请号：US11628308

    申请日：2005-06-01

    申请人： Kenji Sekiguchi ,  Hiroki Ohno

    发明人： Kenji Sekiguchi ,  Hiroki Ohno

    IPC分类号： B08B7/00 ,  B08B7/04

    CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

    摘要： A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.

    摘要翻译： 在基本上水平状态下旋转晶片W的同时，通过向晶片W上供应双流体高压喷射水或大体积的水来处理晶片W. 在停止供给清洗液之后，通过以比供给清洗液所用的速度高的速度旋转晶片W来干燥晶片W. 在停止供给清洗液之后的时间内，在高速旋转基板之前，不进行使用净化水的漂洗处理。

    Substrate processing method and substrate processing apparatus
    15.
    发明授权
    Substrate processing method and substrate processing apparatus 有权
    基板处理方法和基板处理装置

    公开(公告)号：US08137478B2

    公开(公告)日：2012-03-20

    申请号：US12857973

    申请日：2010-08-17

    申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

    发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

    IPC分类号： B08B7/00 ,  B08B7/04

    CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

    摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

    摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

    Substrate processing apparatus and substrate processing method
    16.
    发明授权
    Substrate processing apparatus and substrate processing method 失效
    基板加工装置及基板处理方法

    公开(公告)号：US07364626B2

    公开(公告)日：2008-04-29

    申请号：US10285411

    申请日：2002-11-01

    申请人： Keizo Hirose ,  Kenji Sekiguchi

    发明人： Keizo Hirose ,  Kenji Sekiguchi

    IPC分类号： B08B3/04

    CPC分类号： H01L21/67051 ,  B08B3/024 ,  B08B3/04 ,  Y10S134/902

    摘要： Substrate cleaning apparatus and method capable of preventing adhesion of particles to a substrate irrespective of being hydrophilic or hydrophobic are provided. Although a cleaning liquid ejected from a two-fluid nozzle 36 rebounds from a cup CP and scatters in the form of mist toward the center side of a wafer W, a rinsing liquid is supplied from a rinse nozzle 35 to form a water film 51 on the wafer W. Owing to the presence of the water film 51, the surface of the wafer W is protected from adhesion of particles contained in the mist. It is possible to prevent the particles in the mist from adhering to the wafer W and also possible to prevent a bad influence on the wafer W.

    摘要翻译： 提供了能够防止颗粒粘附到基材上而不考虑亲水性或疏水性的基板清洁装置和方法。 虽然从双流体喷嘴36喷射的清洗液体从杯CP反弹并且以薄雾的形式朝向晶片W的中心侧散射，但是从冲洗喷嘴35供给冲洗液以形成水膜51 晶片W.由于水膜51的存在，保护晶片W的表面免受雾中含有的颗粒的粘附。 可以防止雾中的颗粒粘附到晶片W，并且还可以防止对晶片W的不良影响。

    Method of construction of top slab for a nuclear containment building
    17.
    发明授权
    Method of construction of top slab for a nuclear containment building 失效
    核遏制建筑顶板的施工方法

    公开(公告)号：US5119598A

    公开(公告)日：1992-06-09

    申请号：US590172

    申请日：1990-09-28

    申请人： Akinori Tajiri ,  Tadao Suzuki ,  Kouichi Ushiroda ,  Hideyasu Furukawa ,  Yasuyoshi Shimazaki ,  Kenji Sekiguchi ,  Keiji Nakanishi ,  Masami Hosoda

    发明人： Akinori Tajiri ,  Tadao Suzuki ,  Kouichi Ushiroda ,  Hideyasu Furukawa ,  Yasuyoshi Shimazaki ,  Kenji Sekiguchi ,  Keiji Nakanishi ,  Masami Hosoda

    IPC分类号： E04B5/00 ,  G21C13/00

    CPC分类号： G21C13/00 ,  Y02E30/40

    摘要： A method of constructing a top slab to provide a containment roof over a nuclear-power generating building, in particular, a method for utilizing overhead spaces bounded by a wall of the containment building and a shielding wall of the pressure vessel building, wherein the sequential steps involve; erecting a plurality of paired support columns on tops of the wall and of the shielding wall; building upper structural components across said paired support columns; installing a slab liner equipped with slab anchors beneath said lower structural components by suitable joining means; constucting a reinforcing network above said lower structural components; encasing said lower structural components and said reinforcing network; and pouring concrete over the slab liner to a suitable depth.

    摘要翻译： 一种构造顶板以在核能发电建筑物上提供安全壳屋顶的方法，特别是一种利用由密闭建筑物的墙壁和压力容器建筑物的屏蔽壁限定的顶部空间的方法，其中顺序地 步骤涉及; 在壁和屏蔽壁的顶部上竖立多个成对的支撑柱; 在所述成对的支撑柱上建立上部结构部件; 通过适当的接合方式在所述下部结构部件下面安装装有板锚的板坯衬板; 在上述下部结构部件的上方形成加强网络; 包围所述下部结构部件和所述加强网络; 并将混凝土浇筑在板坯衬套上至合适的深度。

    Substrate processing apparatus, substrate processing method, and storage medium
    19.
    发明授权
    Substrate processing apparatus, substrate processing method, and storage medium 有权
    基板处理装置，基板处理方法和存储介质

    公开(公告)号：US08651121B2

    公开(公告)日：2014-02-18

    申请号：US12372265

    申请日：2009-02-17

    申请人： Takehiko Orii ,  Kenji Sekiguchi

    发明人： Takehiko Orii ,  Kenji Sekiguchi

    IPC分类号： B08B3/00

    CPC分类号： H01L21/02052 ,  H01L21/67028 ,  H01L21/67034

    摘要： A substrate processing apparatus includes a chamber configured to dispose a substrate to be processed with a substrate holder, a spin chuck to rotate the substrate, a gas discharging head configured to discharge a dehumidified gas to the substrate, a processing liquid supply nozzle, an IPA supply nozzle, and a driving device configured to move the gas discharging head between a retreat position of an upper part of the chamber and an approach position near the substrate. In particular, the gas discharging head is positioned at the approach position when the IPA is supplied to the substrate so that the dehumidified gas is supplied from the gas discharging head to the substrate when the IPA is supplied to the substrate.

    摘要翻译： 一种基板处理装置，包括：配置成用基板保持件配置被处理基板的室，旋转基板的旋转卡盘，将排出除湿气体排出到基板的排气头，处理液供给喷嘴，IPA 供给喷嘴和驱动装置，该驱动装置构造成使所述气体排出头在所述室的上部的后退位置和所述基板附近的接近位置之间移动。 特别地，当将IPA提供给基板时，气体放电头位于接近位置，使得当将IPA供给到基板时，将除气从气体排出头供应到基板。