公开(公告)号：US11681222B2

公开(公告)日：2023-06-20

申请号：US17320640

申请日：2021-05-14

Applicant: JSR CORPORATION

Inventor： Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Gouji Wakamatsu ,  Kentarou Gotou ,  Yukio Nishimura ,  Takeo Shioya

IPC: G03F7/004 ,  C08F220/24 ,  G03F7/039 ,  C08F220/18 ,  C08F220/28 ,  G03F7/20 ,  G03F7/16 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

CPC classification number: G03F7/0046 ,  C08F220/18 ,  C08F220/1807 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40 ,  C08F220/283

Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

公开(公告)号：US20170199453A1

公开(公告)日：2017-07-13

申请号：US15299871

申请日：2016-10-21

Applicant: JSR CORPORATION

Inventor： Hiroki NAKAGAWA ,  Hiromitsu Nakashima ,  Gouji Wakamatsu ,  Kentarou Gotou ,  Yukio Nishimura ,  Takeo Shioya

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/40 ,  G03F7/32 ,  G03F7/38 ,  G03F7/039 ,  G03F7/20

CPC classification number: G03F7/0046 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40

Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

公开(公告)号：US09213236B2

公开(公告)日：2015-12-15

申请号：US14178622

申请日：2014-02-12

Applicant: JSR CORPORATION

Inventor： Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Gouji Wakamatsu ,  Kentarou Gotou ,  Yukio Nishimura ,  Takeo Shioya

IPC: G03F7/039 ,  G03F7/004 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/20

CPC classification number: G03F7/0046 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40

Abstract: A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70° or more.

Abstract translation: 用于辐射敏感性树脂组合物的含氟聚合物用于在形成抗蚀剂图案的工艺中形成光致抗蚀剂膜，包括液浸光刻工艺，其中通过折射率大于 波长为193nm的空气的折射率，并且存在于透镜和光致抗蚀剂膜之间。 含氟聚合物的重均分子量通过凝胶渗透色谱法测定为1000〜50,000，与水的后退接触角和由其形成的光致抗蚀剂膜为70°以上。

公开(公告)号：US08808974B2

公开(公告)日：2014-08-19

申请号：US13769907

申请日：2013-02-19

Applicant: JSR Corporation

Inventor： Yukio Nishimura ,  Kaori Sakai ,  Nobuji Matsumura ,  Makoto Sugiura ,  Atsushi Nakamura ,  Gouji Wakamatsu ,  Yuusuke Anno

IPC: G03F7/20 ,  G03F7/40 ,  G03F7/00 ,  G03F7/039

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/2024 ,  G03F7/2041 ,  G03F7/40

Abstract: A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern.

Abstract translation: 形成图案的方法包括在基板上提供第一正性辐射敏感树脂组合物以形成第一抗蚀剂层。 第一正性辐射敏感性树脂组合物包含交联剂，含有酸不稳定基团并且不含交联基团的聚合物，辐射敏感性酸产生剂和溶剂。 第一抗蚀剂层选择性地暴露于辐射，并显影以形成第一抗蚀剂图案。 第一抗蚀剂图案对辐射无活性，或在碱性显影剂或第二正性辐射敏感树脂组合物中不溶化。 第二正性辐射敏感性树脂组合物设置在基板上以形成第二抗蚀剂层。 第二抗蚀剂层选择性地暴露于辐射，并显影以在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。

公开(公告)号：US08697344B2

公开(公告)日：2014-04-15

申请号：US13854214

申请日：2013-04-01

Applicant: JSR Corporation

Inventor： Daita Kouno ,  Norihiko Sugie ,  Gouji Wakamatsu ,  Norihiro Natsume ,  Yukio Nishimura ,  Makoto Sugiura

IPC: G03F7/20 ,  G03F7/11

CPC classification number: G03F7/11 ,  G03F7/2041

Abstract: A composition for forming an upper layer film includes a solvent and a resin component including a first resin having a first repeating unit and a second repeating unit. The first repeating unit is a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof. The second repeating unit is a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof. The composition is to be used for forming the upper layer film in liquid immersion lithography.

Abstract translation: 用于形成上层膜的组合物包括溶剂和包含具有第一重复单元和第二重复单元的第一树脂的树脂组分。 第一重复单元是由式（1-1）表示的重复单元，由式（1-2）表示的重复单元，由式（1-3）表示的重复单元或其组合。 第二重复单元是由式（2-1）表示的重复单元，由式（2-2）表示的重复单元或它们两者。 该组合物用于在液浸光刻中形成上层膜。