公开(公告)号：US20230069221A1

公开(公告)日：2023-03-02

申请号：US17961611

申请日：2022-10-07

Applicant: JSR CORPORATION

Inventor： Tomoaki SEKO ,  Tatsuya Sakai ,  Kazunori Sakai ,  Yusuke Anno

IPC: G03F7/075 ,  G03F7/20 ,  G03F7/32

Abstract: A composition for resist underlayer film formation, includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents an organic group comprising at least one structure selected from the group consisting of a hydroxy group, a carbonyl group, and an ether bond; a is an integer of 1 to 3, wherein in a case in which a is no less than 2, a plurality of Xs are identical or different from each other; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms, wherein is a group other than X; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R1s are identical or different from each other, and wherein a sum of a and b is no greater than 3.

公开(公告)号：US11320739B2

公开(公告)日：2022-05-03

申请号：US16100501

申请日：2018-08-10

Applicant: JSR CORPORATION

Inventor： Goji Wakamatsu ,  Naoya Nosaka ,  Tsubasa Abe ,  Kazunori Sakai ,  Yuushi Matsumura ,  Hayato Namai

IPC: G03F7/40 ,  G03F7/30 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03F7/26 ,  G03F7/039

Abstract: A composition for resist underlayer film formation, includes a first compound and a solvent. The first compound includes a first group represented by formula (1) and a partial structure comprising an aromatic ring. In the formula (1), R1 represents a single bond or an oxygen atom, R2 represents a divalent chain or alicyclic hydrocarbon group having 1 to 30 carbon atoms, and * denotes a bonding site to a moiety other than the first group of the first compound. *—R1—R2—CN  (1)

公开(公告)号：US11215928B2

公开(公告)日：2022-01-04

申请号：US16354344

申请日：2019-03-15

Applicant: JSR CORPORATION

Inventor： Kazunori Takanashi ,  Hiroki Nakatsu ,  Kazunori Sakai ,  Ichihiro Miura

IPC: G03F7/11 ,  C07D265/16 ,  G03F7/09 ,  H01L21/027 ,  C07D413/14 ,  C09D165/00 ,  G03F7/16 ,  C09D161/12

Abstract: A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), R2 to R5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Ar1 represents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms; R6 represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 0 to 9.

公开(公告)号：US20190243247A1

公开(公告)日：2019-08-08

申请号：US16388238

申请日：2019-04-18

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Goji Wakamatsu ,  Tsubasa Abe ,  Yuushi Matsumura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kazunori Sakai

IPC: G03F7/11 ,  C08G61/02 ,  C09D165/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C07C35/37 ,  C07C33/28 ,  C07C35/44 ,  C07C43/166 ,  H01L21/027 ,  H01L21/308

CPC classification number: G03F7/11 ,  C07C33/28 ,  C07C35/37 ,  C07C35/44 ,  C07C43/166 ,  C07C2602/42 ,  C07C2603/20 ,  C07C2603/50 ,  C07C2603/54 ,  C08F299/02 ,  C08G61/02 ,  C08G2261/1414 ,  C08G2261/1422 ,  C08G2261/1424 ,  C08G2261/148 ,  C09D165/00 ,  G03F7/162 ,  G03F7/168 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081

Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.