公开(公告)号：US11126084B2

公开(公告)日：2021-09-21

申请号：US16388238

申请日：2019-04-18

Applicant: JSR CORPORATION

Inventor： Naoya Nosaka ,  Goji Wakamatsu ,  Tsubasa Abe ,  Yuushi Matsumura ,  Yoshio Takimoto ,  Shin-ya Nakafuji ,  Kazunori Sakai

IPC: G03F7/11 ,  C08G61/02 ,  C09D165/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C07C35/37 ,  C07C33/28 ,  C07C35/44 ,  C07C43/166 ,  H01L21/027 ,  H01L21/308 ,  C08F299/02 ,  H01L21/3065

Abstract: A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

公开(公告)号：US10520814B2

公开(公告)日：2019-12-31

申请号：US15672660

申请日：2017-08-09

Applicant: JSR CORPORATION

Inventor： Masayuki Miyake ,  Goji Wakamatsu ,  Tsubasa Abe ,  Kazunori Takanashi ,  Kazunori Sakai

IPC: G03F7/09 ,  G03F7/40 ,  G03F7/38 ,  C08G8/20 ,  G03F7/004 ,  G03F7/11 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  C09D161/06 ,  C09D161/12 ,  C09D161/14

Abstract: A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156° C., and a second solvent having a normal boiling point of no less than 156° C. and less than 300° C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.

公开(公告)号：US11667620B2

公开(公告)日：2023-06-06

申请号：US16809740

申请日：2020-03-05

Applicant: JSR CORPORATION

Inventor： Hiroki Nakatsu ,  Kazunori Takanashi ,  Kazunori Sakai ,  Yuushi Matsumura ,  Hiroki Nakagawa

IPC: C07D317/64 ,  G03F7/11 ,  G03F7/16 ,  C07D405/14 ,  C09D201/06 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

CPC classification number: C07D317/64 ,  C07D405/14 ,  C09D201/06 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/322 ,  G03F7/38

Abstract: The composition contains a compound and a solvent. The compound includes a group represented by formula (1). The compound has a molecular weight of no less than 200 and has a percentage content of carbon atoms of no less than 40% by mass. In the formula (1), R1 and R2 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms, or R1 and R2 taken together represent a part of an alicyclic structure having 3 to 20 ring atoms constituted together with the carbon atom to which R1 and R2 bond; Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an arene or heteroarene having 6 to 20 ring atoms; and X represents an oxygen atom, —CR3R4—, —CR3R4—O— or —O—CR3R4—.

公开(公告)号：US20190258162A1

公开(公告)日：2019-08-22

申请号：US16282675

申请日：2019-02-22

Applicant: JSR CORPORATION ,  CORNELL UNIVERSITY

Inventor： Kazunori Sakai ,  Hong Xu ,  Christopher K. Ober ,  Emmanuel P. Giannelis

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A radiation-sensitive composition includes: a plurality of particles including a metal oxide as a principal component; and an organic solvent. A ratio (D90/D50) of a 90% cumulative diameter (D90) to a 50% cumulative diameter (D50) of the particles is no less than 1.0 and no greater than 1.3 as determined by a volumetric particle size distribution measurement according to dynamic light scattering with a 1% by mass dispersion at 25° C. prepared by dispersing the plurality of particles in propylene glycol monomethyl ether acetate.

公开(公告)号：US20180348633A1

公开(公告)日：2018-12-06

申请号：US16100501

申请日：2018-08-10

Applicant: JSR CORPORATION

Inventor： Goji Wakamatsu ,  Naoya Nosaka ,  Tsubasa Abe ,  Kazunori Sakai ,  Yuushi Matsumura ,  Hayato Namai

IPC: G03F7/039 ,  G03F7/11 ,  G03F7/26

CPC classification number: G03F7/11 ,  G03F7/26 ,  H01L21/027

Abstract: A composition for resist underlayer film formation, includes a first compound and a solvent. The first compound includes a first group represented by formula (1) and a partial structure comprising an aromatic ring. In the formula (1), R1 represents a single bond or an oxygen atom, R2 represents a divalent chain or alicyclic hydrocarbon group having 1 to 30 carbon atoms, and * denotes a bonding site to a moiety other than the first group of the first compound. *—R1-R2—CN  (1)

公开(公告)号：US20240319599A1

公开(公告)日：2024-09-26

申请号：US18125934

申请日：2023-03-24

Applicant: Inpria Corporation ,  JSR Corporation

Inventor： Kazunori Sakai ,  Tatsuya Kasai ,  Akitaka Nii ,  Peter de Schepper

IPC: G03F7/11 ,  C09D7/63 ,  C09D183/16

CPC classification number: G03F7/11 ,  C09D7/63 ,  C09D183/16

Abstract: Gas releasing compositions that can facilitate improved patterning of organometallic resists are described. The gas releasing compositions can release water, carbon dioxide, or alcohols in response to radiation or heating. A film-forming composition is composed of a flowable blend of a reactive gas releasing moiety, a matrix forming species, an organic solvent, and an optional activating agent. An underlayer composition is composed of a blend of a reactive gas releasing moiety, a polymer matrix and an optional activating additive. Multilayer structures are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo-hydroxo compositions, which are placed over a gas releasing underlayer formed on a substrate, such as a semiconductor wafer. Methods for patterning multilayer structures are also described.

公开(公告)号：US20240021429A1

公开(公告)日：2024-01-18

申请号：US18372163

申请日：2023-09-25

Applicant: JSR CORPORATION

Inventor： Ken MARUYAMA ,  Takayoshi Abe ,  Kazunori Sakai

IPC: H01L21/027 ,  H01L21/311 ,  G03F7/16 ,  G03F7/004 ,  G03F7/20

CPC classification number: H01L21/0274 ,  H01L21/31116 ,  G03F7/167 ,  G03F7/0042 ,  G03F7/2004

Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. An exposed portion of the exposed metal-containing resist film is dissolved with a developer to form a resist pattern.

公开(公告)号：US20240004297A1

公开(公告)日：2024-01-04

申请号：US18218193

申请日：2023-07-05

Applicant: JSR CORPORATION

Inventor： Tatsuya KASAI ,  Ayaka Furusawa ,  Kazunori Sakai ,  Ryuichi Serizawa

IPC: G03F7/11 ,  C08G77/04 ,  H01L21/027

CPC classification number: G03F7/11 ,  C08G77/04 ,  H01L21/0274 ,  C08G77/80

Abstract: A composition includes: a solvent; and a compound including: at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2); and a structural unit represented by formula (2-1). X is a monovalent organic group other than an alkoxy group, the monovalent organic group having 1 to 20 carbon atoms and having at least one fluorine atom; Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; R0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is a monovalent organic group having 1 to 20 carbon atoms and having no fluorine atom, a hydroxy group, a hydrogen atom, or a halogen atom; and R2 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms.

公开(公告)号：US10053539B2

公开(公告)日：2018-08-21

申请号：US14955473

申请日：2015-12-01

Applicant: JSR Corporation

Inventor： Shin-ya Nakafuji ,  Goji Wakamatsu ,  Tsubasa Abe ,  Kazunori Sakai

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/306 ,  C08G65/40

CPC classification number: C08G65/4043 ,  C08G65/40 ,  C08G65/4031 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/30604 ,  H01L21/3081

Abstract: A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R1 and R2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.

公开(公告)号：US09620378B1

公开(公告)日：2017-04-11

申请号：US14757551

申请日：2015-12-24

Applicant: JSR Corporation

Inventor： Shin-ya Nakafuji ,  Goji Wakamatsu ,  Tsubasa Abe ,  Kazunori Sakai

IPC: G03F7/11 ,  H01L21/308 ,  H01L21/027 ,  C09D7/12 ,  C09D201/00 ,  C09D171/08 ,  C07C255/54 ,  C09D171/12

CPC classification number: C09D201/00 ,  C07C255/54 ,  C09D171/12 ,  G03F7/094

Abstract: A composition comprises: a compound having one partial structure represented by formula (1), and a solvent. n1 and n2 are each independently an integer of 0 to 2; and k1 and k2 are each independently an integer of 0 to 9. The compound preferably has an intermolecular bond-forming group. The compound is preferably represented by formula (2). Z represents the partial structure represented by the formula (1); Ar1 and Ar2 represent a substituted or unsubstituted arenediyl group having 6 to 20 carbon atoms; Ar3 and Ar4 represent a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; and p1 and p2 are each independently an integer of 0 to 3.