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    Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same
    11.
    发明授权
    Photoresist cross-linking monomers, photoresist polymers and photoresist compositions comprising the same 有权
    光致抗蚀剂交联单体，光致抗蚀剂聚合物和包含其的光致抗蚀剂组合物

    公开(公告)号：US06200731B1

    公开(公告)日：2001-03-13

    申请号：US09465112

    申请日：1999-12-16

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03C173

    CPC分类号： C07D519/00 ,  C07C69/753 ,  Y10S430/115

    摘要： The present invention discloses a cross-linking monomer for a photoresist polymer represented by following Chemical Formula 1: wherein, V represents CH2, CH2CH2, oxygen or sulfur; Y is selected from the group consisting of straight or branched C1-10 alkyl, oxygen, and straight or branched C1-10 ether; R′ and R″ individually represent H or CH3; i is a number of 1 to 5; and n is a number of 0 to 3; and a process for preparing a photoresist copolymer comprising the same.

    摘要翻译： 本发明公开了由以下化学式1表示的光致抗蚀剂聚合物交联单体：<化学式1>其中V表示CH 2，CH 2 CH 2，氧或硫; Y选自直链或支链C 1-10烷基，氧和直链或支链C1-10醚; R'和R“分别表示H或CH 3; 我是1到5的数字; n为0〜3的数; 以及制备包含该光致抗蚀剂的光致抗蚀剂共聚物的方法。

    Additives for improving post exposure delay stability of photoresist
    13.
    发明授权
    Additives for improving post exposure delay stability of photoresist 失效
    用于改善光刻胶曝光延迟稳定性的添加剂

    公开(公告)号：US06514665B1

    公开(公告)日：2003-02-04

    申请号：US09651809

    申请日：2000-08-30

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106

    摘要： The present invention relates to a compound that is useful as an additive for improving post exposure delay stability in a photoresist composition, and a photoresist composition containing the same. In particular, it has been found that a compound of the formula: where A, R1 to R3 are defined herein, can efficiently prevent or reduce the phenomenon of a lack of pattern formation and T-topping resulting from post exposure delay (PED) by reducing influences of environmental amine compounds. PED is a disadvantage of alicyclic compounds used in the lithography process using light sources such as KrF, ArF, VUV, E-beam, ion beam and EUV.

    摘要翻译： 本发明涉及可用作改善光致抗蚀剂组合物中的曝光后延迟稳定性的添加剂的化合物和含有它们的光致抗蚀剂组合物。 特别地，已经发现，下式化合物：其中A，R 1至R 3在本文中定义，可以有效地防止或减少由后曝光延迟（PED）引起的图案形成和T形顶部缺乏的现象 减少环境胺化合物的影响。 PED是使用诸如KrF，ArF，VUV，电子束，离子束和EUV的光源的光刻工艺中使用的脂环族化合物的缺点。

    Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same
    14.
    发明授权
    Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same 失效
    用于通过甲硅烷基化的顶表面成像方法的光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06770415B2

    公开(公告)日：2004-08-03

    申请号：US09884313

    申请日：2001-06-19

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7038

    CPC分类号： G03F7/265 ,  C08F8/00 ,  C08F8/14 ,  C08F222/06 ,  C08F232/00 ,  C08F232/04 ,  C08F232/08 ,  G03F7/0395 ,  G03F7/38 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  C08F2220/281 ,  C08F220/06 ,  C08F222/14 ,  C08F222/1006

    摘要： A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).

    摘要翻译： 用于通过甲硅烷基化（TIPS）的顶表面成像方法的光致抗蚀剂聚合物和包含该光致抗蚀剂的光致抗蚀剂组合物。 本发明的光致抗蚀剂聚合物的保护基被选择性地保护在暴露区域中，因此产生羟基。 羟基与甲硅烷基化剂反应以引起甲硅烷基化过程。 因此，当干涉显影光致抗蚀剂膜时，曝光区域仅保留以形成负图形。 此外，本发明的光致抗蚀剂组合物对基材的粘附性优异，从而防止形成微小图案的图案塌陷。 结果，本光致抗蚀剂组合物适用于使用诸如ArF（193nm），VUV（157nm）和EUV（13nm）的光源的光刻工艺。

    Phenylenediamine derivative-type additive useful for a chemically amplified photoresist
    15.
    发明授权
    Phenylenediamine derivative-type additive useful for a chemically amplified photoresist 失效
    可用于化学放大光致抗蚀剂的苯二胺衍生物类型添加剂

    公开(公告)号：US06399272B1

    公开(公告)日：2002-06-04

    申请号：US09595434

    申请日：2000-06-15

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： B03F7004

    CPC分类号： G03F7/0392 ,  G03F7/0045

    摘要： The present invention relates to a phenylenediamine derivative of the formula: where B and B′ are defined herein. The phenylenediamine derivatives of the present invention are useful as an additive in a photoresist composition. For example, it has been found that photoresist. compositions comprising the phenylenediamine derivative of the present invention have a high energy latitude margin, an improved contrast value, and enhanced post exposure delay stability.

    摘要翻译： 本发明涉及下式的苯二胺衍生物：其中B和B'在本文中定义。 本发明的苯二胺衍生物可用作光致抗蚀剂组合物中的添加剂。 例如，已经发现光致抗蚀剂。 包含本发明的苯二胺衍生物的组合物具有高能量纬度裕度，改善的对比度值和增强的后曝光延迟稳定性。

    Photoresist monomers, polymers thereof, and photoresist compositions containing the same
    16.
    发明授权
    Photoresist monomers, polymers thereof, and photoresist compositions containing the same 有权
    光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06235447B1

    公开(公告)日：2001-05-22

    申请号：US09418724

    申请日：1999-10-15

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C08F32/08 ,  C07C62/34 ,  G03F7/0045 ,  G03F7/039

    摘要： The present invention relates to novel monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a far ultraviolet light source, copolymers thereof. Preferred monomers of the invention are represented by Chemical Formula 1 below: wherein, X1 and X2 individually represent CH2, CH2CH2, oxygen or sulfur; Y represents CH2 or oxygen; R1 represents H or CH3, R′ and R″ individually represent substituted or non-substituted (C0-C3) alkyl; and i represents an integer from 0 to 3.

    摘要翻译： 本发明涉及可用于形成光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物的新单体，其适用于采用远紫外光源的光刻法，其共聚物。 本发明优选的单体由下面的化学式1表示：其中，X 1和X 2分别表示CH 2，CH 2 CH 2，氧或硫; Y表示CH2或氧; R 1表示H或CH 3，R'和R“分别表示取代或未取代的（C 0 -C 3）烷基; i表示0〜3的整数。

    Photoresist cross-linker and photoresist composition comprising the same
    17.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06312868B1

    公开(公告)日：2001-11-06

    申请号：US09501096

    申请日：2000-02-09

    申请人： Keun Kyu Kong ,  Jae Chang Jung ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    发明人： Keun Kyu Kong ,  Jae Chang Jung ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/038

    摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources. wherein X1 and X2 individually represent CH2, CH2CH2, O or S; p and s individually represent an integer from 0 to 5; q is 0 or 1; R′ and R″ independently represent hydrogen or methyl; R represents straight or branched C1-10 alkyl, straight or branched C1-10 ether, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ether including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R1 and R2 independently represent hydrogen, straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

    摘要翻译： 本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。 这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺.X1和X2分别表示CH2，CH2CH2，O或S; p和s各自表示0至5的整数; q为0或1; R'和R“独立地表示氢或甲基; R代表直链或支链C 1-10烷基，直链或支链C1-10醚，直链或支链C1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10醚，包括至少一个羟基的直链或支链C 1-10酯，直链或支链C 1-10酮 包括至少一个羟基，包括至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R 1和R 2独立地表示氢，直链或支链C 1-10烷基，直链或支链C 1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛，直链或 包括至少一个羟基的支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基，直链或支链C 1-10羧酸的直链或支链C 1-10酮包括 至少一个羟基，以及包含至少一个羟基的直链或支链C 1-10缩醛。

    Photoresist cross-linker and photoresist composition comprising the same
    18.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06482565B1

    公开(公告)日：2002-11-19

    申请号：US09448964

    申请日：1999-11-24

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D407/12 ,  C07D317/12 ,  C07D319/06

    摘要： The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.

    摘要翻译： 本发明涉及用于光致抗蚀剂的交联剂，其适用于使用KrF（248uR），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。 根据本发明，优选的交联剂包含具有衍生自以下的重复单元的共聚物：（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸的化合物 酸，甲基丙烯酸和马来酸酐。其中R1，R2和R各自表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸， 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酮， 包含至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R3表示氢或甲基; m表示0或1; n表示1〜5的数。

    Monomers for photoresist, polymers thereof, and photoresist compositions using the same
    20.
    发明授权
    Monomers for photoresist, polymers thereof, and photoresist compositions using the same 失效

    公开(公告)号：US06291131B1

    公开(公告)日：2001-09-18

    申请号：US09383547

    申请日：1999-08-26

    申请人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D493/08 ,  C07C61/13 ,  C07C69/753 ,  C07D495/08 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/127

    摘要： The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.