摘要:
Provided is a method of manufacturing a thin film magnetic head. In particular, a method of manufacturing a thin film magnetic head is provided in which a flow process of a photoresist is applied to separate a hard magnetic layer and a metal multi-layer and a photoresist is used to insulate an upper electrode from a lower electrode in manufacturing a magnetic reproduction device, thereby simplifying and optimizing a manufacturing process and significantly reducing a manufacturing time.
摘要:
Provided are a hub for chucking an optical disk to a disk table of a recording/reproducing apparatus using a magnetic attraction force, and a small form factor optical disk for information storage including the hub. The hub is made of a magnetic metal-polymer composite material. The optical disk includes: a disk plate having a central through-hole and a recess, lower than an edge, formed around the through-hole; and a hub made of a magnetic metal-polymer composite material and inserted into the through-hole to be coupled to the disk plate.
摘要:
Provided are an electronic device to which vertical carbon nanotubes (CNTs) are applied and a method of manufacturing the same. The method of manufacturing an electronic device having a vertical CNT includes the steps of: (a) preparing a substrate on which a silicon source is formed; (b) forming a first insulating layer on the substrate, and etching the first insulating layer such that a top surface of the silicon source is exposed; (c) forming a second insulating layer on the silicon source, and forming a gate by patterning the second insulating layer; (d) forming a third insulating layer on the gate, and forming a through hole in which a carbon nanotube channel is to be formed by etching the third insulating layer and the second insulating layer; (e) forming a fourth insulating layer surrounding the gate on the through hole and the third insulating layer, and forming a spacer by etching the fourth insulating layer; (f) forming a metal catalyst on the silicon source; (g) vertically growing the carbon nanotube channel on the silicon source using the metal catalyst; (h) forming a fifth insulating layer on the through hole in which the carbon nanotube is formed and the third insulating layer; and (i) patterning the fifth insulating layer such that the carbon nanotube channel is exposed, and forming a silicon drain. An arrangement problem of horizontal CNTs can be solved by applying vertical CNTs and a selective silicon growth technique.
摘要:
Provided is a form factor disk such as an optical or magnetic disk used in electronic appliances and information appliances. The form factor disk includes: a circular plate having a first hole for inserting a rotational shaft, a plurality of second holes formed adjacent to the first hole, and an information storage region formed at a surface thereof; an upper metal hub located on the circular plate, and having a hole aligned with the first hole of the circular plate and column-shaped joints formed at portions corresponding to the second holes of the circular plate; and a lower metal hub located under the circular plate, and having a hole aligned with the first hole of the circular plate and column-shaped joints formed at portions corresponding to the second holes of the circular plate, wherein the joints of the upper and lower metal hubs are jointed through the second holes.
摘要:
Provided is an apparatus and method of initializing a recording layer used in manufacturing a phase-change optical disk for storing information. The optical disk is initialized using a UV lamp in order to initialize the recording layer of the phase-change optical disk capable of repeatedly writing information, without a separate optical head, whereby it is possible to increase productivity by remarkably reducing an initialization time of the optical disk since a large area is initialized using a UV beam.
摘要:
A schottky barrier transistor and a method of manufacturing the same are provided. The method includes forming a gate insulating layer and a gate on a substrate, forming a spacer on a sidewall of the gate, and growing a polycrystalline silicon layer and a monocrystalline silicon layer on the gate and the substrate, respectively, using a selective silicon growth. A metal is deposited on the polycrystalline silicon layer and the monocrystalline silicon layer. Then, the metal reacts with silicon of the polycrystalline silicon layer and the monocyrstalline silicon layer to form a self-aligned metal silicide layer. Therefore, selective wet etching for removing an unreacted metal after silicidation can be omitted. Furthermore, etching damage caused during the formation of the spacer can be decreased during the growth of the monocrystalline silicon layer, thereby improving the electrical characteristics of devices.