Metal-polymer composite hub and small form factor optical disk for information storage including the same
    12.
    发明申请
    Metal-polymer composite hub and small form factor optical disk for information storage including the same 审中-公开
    金属 - 聚合物复合集线器和小尺寸光盘用于信息存储,包括相同

    公开(公告)号:US20070136737A1

    公开(公告)日:2007-06-14

    申请号:US11483949

    申请日:2006-07-10

    IPC分类号: G11B7/24

    CPC分类号: G11B23/0035

    摘要: Provided are a hub for chucking an optical disk to a disk table of a recording/reproducing apparatus using a magnetic attraction force, and a small form factor optical disk for information storage including the hub. The hub is made of a magnetic metal-polymer composite material. The optical disk includes: a disk plate having a central through-hole and a recess, lower than an edge, formed around the through-hole; and a hub made of a magnetic metal-polymer composite material and inserted into the through-hole to be coupled to the disk plate.

    摘要翻译: 提供了一种用于使用磁吸引力将光盘夹持到记录/再现装置的盘台的轮毂和用于包括轮毂的信息存储的小型光盘。 轮毂由磁性金属 - 聚合物复合材料制成。 光盘包括:具有中心通孔的盘片和形成在通孔周围的比边缘低的凹槽; 以及由磁性金属 - 聚合物复合材料制成并插入到通孔中以与盘片连接的毂。

    ELECTRONIC DEVICES USING CARBON NANOTUBES HAVING VERTICAL STRUCTURE AND THE MANUFACTURING METHOD THEREOF
    13.
    发明申请
    ELECTRONIC DEVICES USING CARBON NANOTUBES HAVING VERTICAL STRUCTURE AND THE MANUFACTURING METHOD THEREOF 有权
    使用具有垂直结构的碳纳米管的电子器件及其制造方法

    公开(公告)号:US20100096619A1

    公开(公告)日:2010-04-22

    申请号:US12517803

    申请日:2007-11-27

    IPC分类号: H01L29/66 H01L21/336

    摘要: Provided are an electronic device to which vertical carbon nanotubes (CNTs) are applied and a method of manufacturing the same. The method of manufacturing an electronic device having a vertical CNT includes the steps of: (a) preparing a substrate on which a silicon source is formed; (b) forming a first insulating layer on the substrate, and etching the first insulating layer such that a top surface of the silicon source is exposed; (c) forming a second insulating layer on the silicon source, and forming a gate by patterning the second insulating layer; (d) forming a third insulating layer on the gate, and forming a through hole in which a carbon nanotube channel is to be formed by etching the third insulating layer and the second insulating layer; (e) forming a fourth insulating layer surrounding the gate on the through hole and the third insulating layer, and forming a spacer by etching the fourth insulating layer; (f) forming a metal catalyst on the silicon source; (g) vertically growing the carbon nanotube channel on the silicon source using the metal catalyst; (h) forming a fifth insulating layer on the through hole in which the carbon nanotube is formed and the third insulating layer; and (i) patterning the fifth insulating layer such that the carbon nanotube channel is exposed, and forming a silicon drain. An arrangement problem of horizontal CNTs can be solved by applying vertical CNTs and a selective silicon growth technique.

    摘要翻译: 提供了应用立式碳纳米管(CNT)的电子装置及其制造方法。 制造具有垂直CNT的电子器件的方法包括以下步骤:(a)制备其上形成有硅源的衬底; (b)在所述基板上形成第一绝缘层,并且蚀刻所述第一绝缘层以使所述硅源的顶表面露出; (c)在所述硅源上形成第二绝缘层,并且通过图案化所述第二绝缘层形成栅极; (d)在栅极上形成第三绝缘层,形成通过蚀刻第三绝缘层和第二绝缘层形成碳纳米管通道的通孔; (e)在所述通孔和所述第三绝缘层上形成围绕所述栅极的第四绝缘层,并且通过蚀刻所述第四绝缘层形成间隔物; (f)在硅源上形成金属催化剂; (g)使用金属催化剂使硅源上的碳纳米管通道垂直生长; (h)在其上形成有碳纳米管的通孔和第三绝缘层上形成第五绝缘层; 和(i)对第五绝缘层进行构图,使得碳纳米管通道露出,并形成硅漏极。 水平CNT的布置问题可以通过应用垂直CNT和选择性硅生长技术来解决。

    Form factor disk
    14.
    发明授权
    Form factor disk 有权
    外形尺寸盘

    公开(公告)号:US07562374B2

    公开(公告)日:2009-07-14

    申请号:US11149098

    申请日:2005-06-09

    IPC分类号: G11B25/04

    CPC分类号: G11B23/0035

    摘要: Provided is a form factor disk such as an optical or magnetic disk used in electronic appliances and information appliances. The form factor disk includes: a circular plate having a first hole for inserting a rotational shaft, a plurality of second holes formed adjacent to the first hole, and an information storage region formed at a surface thereof; an upper metal hub located on the circular plate, and having a hole aligned with the first hole of the circular plate and column-shaped joints formed at portions corresponding to the second holes of the circular plate; and a lower metal hub located under the circular plate, and having a hole aligned with the first hole of the circular plate and column-shaped joints formed at portions corresponding to the second holes of the circular plate, wherein the joints of the upper and lower metal hubs are jointed through the second holes.

    摘要翻译: 提供了诸如用于电子设备和信息设备中的光学或磁盘的形状因子盘。 形状因素盘包括:圆板,具有用于插入旋转轴的第一孔,与第一孔相邻形成的多个第二孔以及形成在其表面的信息存储区; 位于圆板上的上金属毂,具有与圆板的第一孔对准的孔和形成在对应于圆板的第二孔的部分处的柱形接头; 以及位于圆板下方的下金属毂,并且具有与圆板的第一孔对准的孔和形成在与圆板的第二孔对应的部分处形成的柱状接头,其中上下的接头 金属轮毂通过第二个孔接合。

    Apparatus and method of initializing phase-change optical disk
    15.
    发明授权
    Apparatus and method of initializing phase-change optical disk 有权
    初始化相变光盘的装置和方法

    公开(公告)号:US07558187B2

    公开(公告)日:2009-07-07

    申请号:US11299067

    申请日:2005-12-08

    IPC分类号: G11B7/26 G11B7/00

    CPC分类号: G11B7/268

    摘要: Provided is an apparatus and method of initializing a recording layer used in manufacturing a phase-change optical disk for storing information. The optical disk is initialized using a UV lamp in order to initialize the recording layer of the phase-change optical disk capable of repeatedly writing information, without a separate optical head, whereby it is possible to increase productivity by remarkably reducing an initialization time of the optical disk since a large area is initialized using a UV beam.

    摘要翻译: 提供了一种初始化用于制造用于存储信息的相变光盘的记录层的装置和方法。 使用UV灯对光盘进行初始化,以便初始化能够重复地写信息的相变光盘的记录层,而无需单独的光头,由此可以显着地减少初始化时间 因为使用UV光束来初始化大面积的光盘。

    Schottky barrier transistor and method of manufacturing the same
    16.
    发明授权
    Schottky barrier transistor and method of manufacturing the same 失效
    肖特基势垒晶体管及其制造方法

    公开(公告)号:US07005356B2

    公开(公告)日:2006-02-28

    申请号:US10746493

    申请日:2003-12-23

    IPC分类号: H01L21/28

    摘要: A schottky barrier transistor and a method of manufacturing the same are provided. The method includes forming a gate insulating layer and a gate on a substrate, forming a spacer on a sidewall of the gate, and growing a polycrystalline silicon layer and a monocrystalline silicon layer on the gate and the substrate, respectively, using a selective silicon growth. A metal is deposited on the polycrystalline silicon layer and the monocrystalline silicon layer. Then, the metal reacts with silicon of the polycrystalline silicon layer and the monocyrstalline silicon layer to form a self-aligned metal silicide layer. Therefore, selective wet etching for removing an unreacted metal after silicidation can be omitted. Furthermore, etching damage caused during the formation of the spacer can be decreased during the growth of the monocrystalline silicon layer, thereby improving the electrical characteristics of devices.

    摘要翻译: 提供肖特基势垒晶体管及其制造方法。 该方法包括在衬底上形成栅极绝缘层和栅极,在栅极的侧壁上形成间隔物,并使用选择性硅生长分别在栅极和衬底上生长多晶硅层和单晶硅层 。 金属沉积在多晶硅层和单晶硅层上。 然后,金属与多晶硅层和单晶硅层的硅反应形成自对准的金属硅化物层。 因此,可以省略用于除去硅化后的未反应金属的选择性湿法蚀刻。 此外,在单晶硅层的生长期间,可以减少在间隔物形成期间引起的蚀刻损伤,从而提高器件的电气特性。