公开(公告)号：US07757247B2

公开(公告)日：2010-07-13

申请号：US11288693

申请日：2005-11-29

申请人： Woo Seok Cheong ,  Yong Goo Yoo ,  Sung Q Lee ,  Ho Jun Ryu ,  Mun Cheol Paek ,  Eun Kyoung Kim ,  Kang Ho Park

发明人： Woo Seok Cheong ,  Yong Goo Yoo ,  Sung Q Lee ,  Ho Jun Ryu ,  Mun Cheol Paek ,  Eun Kyoung Kim ,  Kang Ho Park

IPC分类号： G11B7/24 ,  G11B23/03 ,  G11B3/70 ,  G11B5/84 ,  G11B7/26 ,  G11B5/82

CPC分类号： G11B23/0035

摘要： Provided is a small form factor optical/magnetic disk including an integrated metal hub and a disk plate. The integrated metal hub includes a circular upper metal hub and a circular lower metal hub integrally formed with and disposed under the upper metal hub. The circular lower metal hub has a smaller diameter smaller than the upper metal hub. A central hole is formed in central portions of the upper and lower metal hubs and passes through the upper and lower metal hubs. The disk plate has a through-hole that is formed in a central portion and is directly associated with the integrated metal hub, and a recess that is formed around the through-hole and allows the upper metal hub to be mounted therein. Since the central portion of the small form factor optical/magnetic disk is not thick, the small form factor optical/magnetic disk can contribute to an ultra thin small form factor information storage device. Also, since manufacturing processes are simple, price and quality competitiveness can be enhanced.

摘要翻译： 提供了包括集成金属毂和盘片的小型光学/磁盘。 集成金属毂包括圆形上金属毂和与上金属毂一体形成并设置在其下的圆形下金属毂。 圆形下部金属毂具有比上部金属毂更小的直径。 中心孔形成在上下金属轮毂的中心部分，并通过上下金属轮毂。 盘片具有形成在中心部分并且与集成金属毂直接相关联的通孔，以及形成在通孔周围并允许上金属毂安装在其中的凹部。 由于小型光学/磁盘的中心部分不厚，因此小型光学/磁盘可以有助于超薄型小尺寸信息存储装置。 此外，由于制造工艺简单，因此可以提高价格和质量竞争力。

公开(公告)号：US07562374B2

公开(公告)日：2009-07-14

申请号：US11149098

申请日：2005-06-09

申请人： Woo Seok Cheong ,  Yong Goo Yoo ,  Sung Q Lee ,  Ho Jun Ryu ,  Mun Cheol Paek ,  Eun Kyoung Kim

发明人： Woo Seok Cheong ,  Yong Goo Yoo ,  Sung Q Lee ,  Ho Jun Ryu ,  Mun Cheol Paek ,  Eun Kyoung Kim

IPC分类号： G11B25/04

CPC分类号： G11B23/0035

摘要： Provided is a form factor disk such as an optical or magnetic disk used in electronic appliances and information appliances. The form factor disk includes: a circular plate having a first hole for inserting a rotational shaft, a plurality of second holes formed adjacent to the first hole, and an information storage region formed at a surface thereof; an upper metal hub located on the circular plate, and having a hole aligned with the first hole of the circular plate and column-shaped joints formed at portions corresponding to the second holes of the circular plate; and a lower metal hub located under the circular plate, and having a hole aligned with the first hole of the circular plate and column-shaped joints formed at portions corresponding to the second holes of the circular plate, wherein the joints of the upper and lower metal hubs are jointed through the second holes.

摘要翻译： 提供了诸如用于电子设备和信息设备中的光学或磁盘的形状因子盘。 形状因素盘包括：圆板，具有用于插入旋转轴的第一孔，与第一孔相邻形成的多个第二孔以及形成在其表面的信息存储区; 位于圆板上的上金属毂，具有与圆板的第一孔对准的孔和形成在对应于圆板的第二孔的部分处的柱形接头; 以及位于圆板下方的下金属毂，并且具有与圆板的第一孔对准的孔和形成在与圆板的第二孔对应的部分处形成的柱状接头，其中上下的接头 金属轮毂通过第二个孔接合。

公开(公告)号：US20070136737A1

公开(公告)日：2007-06-14

申请号：US11483949

申请日：2006-07-10

申请人： Ho Jun Ryu ,  Yong Goo Yoo ,  Woo Seok Cheong ,  Eun Kyoung Kim ,  Mun Cheol Paek ,  Kwang Yong Kang

发明人： Ho Jun Ryu ,  Yong Goo Yoo ,  Woo Seok Cheong ,  Eun Kyoung Kim ,  Mun Cheol Paek ,  Kwang Yong Kang

IPC分类号： G11B7/24

CPC分类号： G11B23/0035

摘要： Provided are a hub for chucking an optical disk to a disk table of a recording/reproducing apparatus using a magnetic attraction force, and a small form factor optical disk for information storage including the hub. The hub is made of a magnetic metal-polymer composite material. The optical disk includes: a disk plate having a central through-hole and a recess, lower than an edge, formed around the through-hole; and a hub made of a magnetic metal-polymer composite material and inserted into the through-hole to be coupled to the disk plate.

摘要翻译： 提供了一种用于使用磁吸引力将光盘夹持到记录/再现装置的盘台的轮毂和用于包括轮毂的信息存储的小型光盘。 轮毂由磁性金属 - 聚合物复合材料制成。 光盘包括：具有中心通孔的盘片和形成在通孔周围的比边缘低的凹槽; 以及由磁性金属 - 聚合物复合材料制成并插入到通孔中以与盘片连接的毂。

公开(公告)号：US07558187B2

公开(公告)日：2009-07-07

申请号：US11299067

申请日：2005-12-08

申请人： Woo Seok Cheong ,  Yong Goo Yoo ,  Ho Jun Ryu ,  Eun Kyoung Kim ,  Mun Cheol Paek

发明人： Woo Seok Cheong ,  Yong Goo Yoo ,  Ho Jun Ryu ,  Eun Kyoung Kim ,  Mun Cheol Paek

IPC分类号： G11B7/26 ,  G11B7/00

CPC分类号： G11B7/268

摘要： Provided is an apparatus and method of initializing a recording layer used in manufacturing a phase-change optical disk for storing information. The optical disk is initialized using a UV lamp in order to initialize the recording layer of the phase-change optical disk capable of repeatedly writing information, without a separate optical head, whereby it is possible to increase productivity by remarkably reducing an initialization time of the optical disk since a large area is initialized using a UV beam.

摘要翻译： 提供了一种初始化用于制造用于存储信息的相变光盘的记录层的装置和方法。 使用UV灯对光盘进行初始化，以便初始化能够重复地写信息的相变光盘的记录层，而无需单独的光头，由此可以显着地减少初始化时间 因为使用UV光束来初始化大面积的光盘。

公开(公告)号：US07384567B2

公开(公告)日：2008-06-10

申请号：US11015422

申请日：2004-12-20

申请人： Woo Seok Cheong ,  Yong Goo Yoo ,  Doo Hee Cho ,  Jae Kwang Lee ,  Ki Chul Kim ,  Jeong Dae Suh

发明人： Woo Seok Cheong ,  Yong Goo Yoo ,  Doo Hee Cho ,  Jae Kwang Lee ,  Ki Chul Kim ,  Jeong Dae Suh

IPC分类号： H01L21/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/18 ,  H01F41/20 ,  H01F41/308

摘要： Provided is a method of manufacturing a thin film magnetic head. In particular, a method of manufacturing a thin film magnetic head is provided in which a flow process of a photoresist is applied to separate a hard magnetic layer and a metal multi-layer and a photoresist is used to insulate an upper electrode from a lower electrode in manufacturing a magnetic reproduction device, thereby simplifying and optimizing a manufacturing process and significantly reducing a manufacturing time.

摘要翻译： 提供一种制造薄膜磁头的方法。 特别地，提供一种制造薄膜磁头的方法，其中施加光致抗蚀剂的流动过程以分离硬磁性层和金属多层，并且使用光致抗蚀剂来使上电极与下电极绝缘 在制造磁再现装置中，从而简化和优化制造工艺并显着减少制造时间。

公开(公告)号：US08071434B2

公开(公告)日：2011-12-06

申请号：US12560702

申请日：2009-09-16

申请人： Woo Seok Cheong ,  Sung Mook Chung ,  Min Ki Ryu ,  Chi Sun Hwang ,  Hye Yong Chu

发明人： Woo Seok Cheong ,  Sung Mook Chung ,  Min Ki Ryu ,  Chi Sun Hwang ,  Hye Yong Chu

IPC分类号： H01L21/338

CPC分类号： H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/7869

摘要： Provided is a method of fabricating a thin film transistor including source and drain electrodes, a novel channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The method includes the steps of forming the channel layer using an oxide semiconductor doped with boron; and patterning the channel layer. The channel layer formed is an oxide semiconductor thin film doped with boron. The electrical characteristics and high temperature stability of the thin film transistor are improved remarkably.

摘要翻译： 提供了一种制造薄膜晶体管的方法，该薄膜晶体管包括形成在基板上的源电极和漏电极，新颖的沟道层，栅极绝缘层和栅极电极。 该方法包括使用掺杂有硼的氧化物半导体形成沟道层的步骤; 并图形化沟道层。 形成的沟道层是掺杂有硼的氧化物半导体薄膜。 薄膜晶体管的电特性和高温稳定性显着提高。

公开(公告)号：US07989286B2

公开(公告)日：2011-08-02

申请号：US12517803

申请日：2007-11-27

申请人： Woo Seok Cheong ,  Jin Ho Lee

发明人： Woo Seok Cheong ,  Jin Ho Lee

IPC分类号： H01L21/8242

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/057

摘要： Provided are an electronic device to which vertical carbon nanotubes (CNTs) are applied and a method of manufacturing the same. The method of manufacturing an electronic device having a vertical CNT includes the steps of: (a) preparing a substrate on which a silicon source is formed; (b) forming a first insulating layer on the substrate, and etching the first insulating layer such that a top surface of the silicon source is exposed; (c) forming a second insulating layer on the silicon source, and forming a gate by patterning the second insulating layer; (d) forming a third insulating layer on the gate, and forming a through hole in which a carbon nanotube channel is to be formed by etching the third insulating layer and the second insulating layer; (e) forming a fourth insulating layer surrounding the gate on the through hole and the third insulating layer, and forming a spacer by etching the fourth insulating layer; (f) forming a metal catalyst on the silicon source; (g) vertically growing the carbon nanotube channel on the silicon source using the metal catalyst; (h) forming a fifth insulating layer on the through hole in which the carbon nanotube is formed and the third insulating layer; and (i) patterning the fifth insulating layer such that the carbon nanotube channel is exposed, and forming a silicon drain. An arrangement problem of horizontal CNTs can be solved by applying vertical CNTs and a selective silicon growth technique.

摘要翻译： 提供了应用立式碳纳米管（CNT）的电子装置及其制造方法。 制造具有垂直CNT的电子器件的方法包括以下步骤：（a）制备其上形成有硅源的衬底; （b）在所述基板上形成第一绝缘层，并且蚀刻所述第一绝缘层以使所述硅源的顶表面露出; （c）在所述硅源上形成第二绝缘层，并且通过图案化所述第二绝缘层形成栅极; （d）在栅极上形成第三绝缘层，形成通过蚀刻第三绝缘层和第二绝缘层形成碳纳米管通道的通孔; （e）在所述通孔和所述第三绝缘层上形成围绕所述栅极的第四绝缘层，并且通过蚀刻所述第四绝缘层形成间隔物; （f）在硅源上形成金属催化剂; （g）使用金属催化剂使硅源上的碳纳米管通道垂直生长; （h）在其上形成有碳纳米管的通孔和第三绝缘层上形成第五绝缘层; 和（i）对第五绝缘层进行构图，使得碳纳米管通道露出，并形成硅漏极。 水平CNT的布置问题可以通过应用垂直CNT和选择性硅生长技术来解决。

公开(公告)号：US20100006837A1

公开(公告)日：2010-01-14

申请号：US12496558

申请日：2009-07-01

申请人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

发明人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01B1/08

CPC分类号： H01L29/7869 ,  C23C14/08 ,  H01L29/247

摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。 该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。 由组合物形成的薄膜是非晶相。 具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

公开(公告)号：US20100019239A1

公开(公告)日：2010-01-28

申请号：US12359149

申请日：2009-01-23

申请人： Woo Seok Cheong ,  Sung Min Yoon ,  Jae Heon Shin ,  Chi Sun Hwang

发明人： Woo Seok Cheong ,  Sung Min Yoon ,  Jae Heon Shin ,  Chi Sun Hwang

IPC分类号： H01L29/786 ,  H01L21/20

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631

摘要： Provided are a method of fabricating a zinc-tin-oxide (ZTO) thin film, a thin film transistor employing the same, and a method of fabricating a thin film transistor. The method of fabricating a ZTO thin film includes depositing zinc oxide and tin oxide at a deposition temperature of 450° C. or lower so that a zinc-to-tin atomic ratio is 4:1 or greater, to form an amorphous ZTO thin film. In the thin film transistor, the ZTO thin film is used as a channel layer.

摘要翻译： 提供了制造锌 - 锡氧化物（ZTO）薄膜的方法，采用该方法的薄膜晶体管以及制造薄膜晶体管的方法。 制造ZTO薄膜的方法包括在450℃或更低的沉积温度下沉积氧化锌和氧化锡，使得锌 - 锡原子比为4:1或更大，以形成无定形ZTO薄膜 。 在薄膜晶体管中，ZTO薄膜用作沟道层。

公开(公告)号：US20090157372A1

公开(公告)日：2009-06-18

申请号：US12201457

申请日：2008-08-29

申请人： Jae Heon SHIN ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

发明人： Jae Heon SHIN ,  Chi Sun Hwang ,  Min Ki Ryu ,  Woo Seok Cheong ,  Hye Yong Chu

IPC分类号： G06G7/62

CPC分类号： G06F17/5036

摘要： Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.

摘要翻译： 提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。 该方法包括接收样本数据，样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时，通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值，其中当前模型是用于预测TFT的源极 - 漏极电流的模型。