公开(公告)号：USD672253S1

公开(公告)日：2012-12-11

申请号：US29408275

申请日：2011-12-09

申请人： Tae Young Lee

设计人： Tae Young Lee

公开(公告)号：US20100199485A1

公开(公告)日：2010-08-12

申请号：US12598111

申请日：2008-04-30

申请人： Robert Dell ,  Chih-Shing Wei ,  Tae Young Lee

发明人： Robert Dell ,  Chih-Shing Wei ,  Tae Young Lee

IPC分类号： B23P11/00 ,  F16B2/02

CPC分类号： F16B2/02 ,  F16B2001/0092 ,  Y10T24/44 ,  Y10T29/49865 ,  Y10T29/49961

摘要： The invention relates to bimetallic leaf spring devices (100) that are responsive to changes in temperature, and methods of constructing and utilizing such devices. In one embodiment, the invention includes a clamping apparatus including a first strip (110) of a first material and a second strip (120) of a second material. The second strip (120) may be attached to the first strip (110) at least two attachment locations. The second strip (120) may be spaced apart from the first strip (110) at least one section between the at least two attachment locations, and at least one of the first material and the second material may include a thermally expansive material.

摘要翻译： 本发明涉及响应温度变化的双金属片弹簧装置（100）以及构造和利用这些装置的方法。 在一个实施例中，本发明包括夹持装置，其包括第一材料的第一条带（110）和第二材料的第二条带（120）。 第二条带（120）可以至少两个附接位置附接到第一条带（110）。 第二条带（120）可以与第一条带（110）间隔开至少两个附接位置之间的至少一个部分，并且第一材料和第二材料中的至少一个可以包括热膨胀材料。

公开(公告)号：US07645697B2

公开(公告)日：2010-01-12

申请号：US11644890

申请日：2006-12-26

申请人： Tae Young Lee

发明人： Tae Young Lee

IPC分类号： H01L21/4763

CPC分类号： H01L21/76837 ,  C23C16/402 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31053 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76829

摘要： A method for forming a dual interlayer dielectric layer, which is capable of preventing an interlayer delamination phenomenon generated between an etch stop layer and an interlayer dielectric layer is provided. An interlayer dielectric layer of a dual structure is formed such that a first interlayer dielectric layer and a second interlayer dielectric layer are sequentially stacked on the etch stop layer. The etch stop layer is formed on a substrate, the substrate having a source/drain region and a gate formed therein. The dual interlayer dielectric layer is selectively etched, and a conductive material is deposited thereon, thereby forming a contact. The O3-TEOS layer and the PE-TEOS layer used as the first interlayer dielectric layer can relieve a compressive stress and improve adhesion force, respectively, thereby preventing the interlayer delamination phenomenon.

摘要翻译： 提供一种能够防止在蚀刻停止层和层间电介质层之间产生的层间分层现象的双层间电介质层的形成方法。 形成双结构的层间电介质层，使得第一层间介电层和第二层间电介质层依次层叠在蚀刻停止层上。 蚀刻停止层形成在衬底上，衬底具有源极/漏极区域和形成在其中的栅极。 选择性地蚀刻双层间介电层，并在其上沉积导电材料，从而形成接触。 用作第一层间介电层的O3-TEOS层和PE-TEOS层可以分别减轻压应力和提高粘附力，从而防止层间分层现象。

公开(公告)号：US09894818B2

公开(公告)日：2018-02-13

申请号：US13542277

申请日：2012-07-05

申请人： Jun Keun Song ,  Tae Young Lee

发明人： Jun Keun Song ,  Tae Young Lee

IPC分类号： H05K13/02 ,  H05K13/04

CPC分类号： H05K13/021 ,  H05K13/0434

摘要： Provided are a tray feeder which provides parts to a part mounting device and parts providing method using the same. The tray feeder includes: a magazine which houses at least one tray for accommodating parts; an inserting/extracting member which inserts a tray into the magazine or extracts a tray from the magazine; a buffer member which is positioned above the magazine and supports a standby tray from which parts accommodated therein are to be mounted on a board by a part mounting device; and a feeding member which is positioned above the inserting/extracting member and provides a tray supported by the feeding member so that parts accommodated in the supported tray are adhered by the part mounting device, wherein the inserting/extracting member is elevated or lowered to insert a tray into the magazine or extract a tray from the magazine.

公开(公告)号：US09705075B2

公开(公告)日：2017-07-11

申请号：US14403058

申请日：2012-06-26

申请人： Sang Ho Lim ,  Tae Young Lee ,  Seong Rae Lee ,  Dong-Su Son

发明人： Sang Ho Lim ,  Tae Young Lee ,  Seong Rae Lee ,  Dong-Su Son

IPC分类号： H01L43/10 ,  G01R33/09 ,  H01L43/02 ,  H01L43/12 ,  H01F10/32 ,  H01F10/12

CPC分类号： H01L43/10 ,  G01R33/098 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/12

摘要： The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers. Also, the multilayer thin film has excellent thermal stability, and thus maintains its PMA energy density even after being subjected to a heat treatment process. In addition, it enables a fine amount of in-plane magnetic anisotropy to be formed by heat treatment so as to reduce the critical current density required for magnetization switching. Therefore, it may be advantageously used for high-performance and high-density MRAM.

公开(公告)号：US20080057736A1

公开(公告)日：2008-03-06

申请号：US11846639

申请日：2007-08-29

申请人： Tae Young Lee

发明人： Tae Young Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/76801 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/3185

摘要： Methods for improving an adhesive force between thin films of a semiconductor device. In one example embodiment, a method for improving an adhesive force between an HDP-CVD (High Density Plasma-Chemical Vapor Deposition) thin film and a nitride film includes forming a HDP-CVD thin film according to an HDP-CVD method in order to exert a compressive stress against a lower structure, and forming a nitride film on the HDP-CVD thin film that exerts a tensile stress that substantially cancels out the compressive stress.

摘要翻译： 用于改善半导体器件的薄膜之间的粘合力的方法。 在一个示例性实施例中，用于改善HDP-CVD（高密度等离子体 - 化学气相沉积）薄膜和氮化物膜之间的粘合力的方法包括根据HDP-CVD方法形成HDP-CVD薄膜，以便 对下部结构施加压缩应力，并在HDP-CVD薄膜上形成氮化物膜，其施加基本抵消压缩应力的拉伸应力。

公开(公告)号：US20070161254A1

公开(公告)日：2007-07-12

申请号：US11616253

申请日：2006-12-26

申请人： Tae Young Lee

发明人： Tae Young Lee

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/31612 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76801

摘要： Lowering the temperature at which an oxide layer is formed produces a passivation layer with improved adhesion characteristics and crack resistance. The method of forming the passivation layer includes first forming an intermetal dielectric layer over a lower metal layer of a semiconductor device. A via is formed in the intermetal dielectric layer. A metal line is formed on the via. A passivation layer is formed over the substrate including the metal line, the passivation layer being formed at a temperature of 300˜350° C. by a high density plasma chemical vapor deposition process.

摘要翻译： 降低形成氧化物层的温度产生具有改善的粘合特性和抗裂性的钝化层。 形成钝化层的方法包括首先在半导体器件的下金属层上形成金属间电介质层。 在金属间电介质层中形成通孔。 在通孔上形成金属线。 在包括金属线的衬底上形成钝化层，钝化层通过高密度等离子体化学气相沉积工艺在300〜350℃的温度下形成。

公开(公告)号：US20070123030A1

公开(公告)日：2007-05-31

申请号：US11555381

申请日：2006-11-01

申请人： Tae Young Lee

发明人： Tae Young Lee

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76801 ,  H01L21/76829 ,  H01L23/3192 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device and a method of manufacturing a semiconductor device. A semiconductor device may include an insulating layer and a metal interconnection. An insulating layer may include a first layer including fluorine and a second layer including SRO (silicon rich oxide) having a dangling bond. A metal interconnection may be formed over the insulating layer.

摘要翻译： 公开了一种半导体器件和半导体器件的制造方法。 半导体器件可以包括绝缘层和金属互连。 绝缘层可以包括包含氟的第一层和包括具有悬挂键的SRO（富硅氧化物）的第二层。 可以在绝缘层上形成金属互连。

公开(公告)号：US11133218B1

公开(公告)日：2021-09-28

申请号：US16750909

申请日：2020-01-23

申请人： Tae Young Lee ,  Youn Tak Park

发明人： Tae Young Lee ,  Youn Tak Park

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/532 ,  H01L21/02

摘要： A semiconductor apparatus having through silicon via structure and a manufacturing method thereof to enable the significant process and cost reduction and the improvement of performance of through silicon via by forming barrier and seed metal layers with electroless plating, the barrier layer applied in forming through silicon via with wet electroless plating thereby enabling structural uniformity and improvement in electrical properties with less process cost and higher yield to meet the both performance and economic objectives. The instant invention enables the formation of TSV with smaller diameter of the opening and, if necessary, omitting the formation of copper seed layer. Direct copper plating on the barrier layer is possible and this reduces the number of processes, charges the inside of via at once through copper plating to bring more improvements in electrical properties as effect.

公开(公告)号：US08418342B2

公开(公告)日：2013-04-16

申请号：US12598111

申请日：2008-04-30

申请人： Robert Dell ,  Chih-Shing Wei ,  Tae Young Lee

发明人： Robert Dell ,  Chih-Shing Wei ,  Tae Young Lee

IPC分类号： B23P11/02 ,  A41F1/00

CPC分类号： F16B2/02 ,  F16B2001/0092 ,  Y10T24/44 ,  Y10T29/49865 ,  Y10T29/49961

摘要： The invention relates to bimetallic leaf spring devices (100) that are responsive to changes in temperature, and methods of constructing and utilizing such devices. In one embodiment, the invention includes a clamping apparatus including a first strip (110) of a first material and a second strip (120) of a second material. The second strip (120) may be attached to the first strip (110) at least two attachment locations. The second strip (120) may be spaced apart from the first strip (110) at least one section between the at least two attachment locations, and at least one of the first material and the second material may include a thermally expansive material.

摘要翻译： 本发明涉及响应温度变化的双金属片弹簧装置（100）以及构造和利用这些装置的方法。 在一个实施例中，本发明包括夹持装置，其包括第一材料的第一条带（110）和第二材料的第二条带（120）。 第二条带（120）可以至少两个附接位置附接到第一条带（110）。 第二条带（120）可以与第一条带（110）间隔开至少两个附接位置之间的至少一个部分，并且第一材料和第二材料中的至少一个可以包括热膨胀材料。