公开(公告)号：US20180182835A1

公开(公告)日：2018-06-28

申请号：US15848059

申请日：2017-12-20

Applicant: Japan Display Inc.

Inventor： Hiroki OHARA

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3276 ,  G06F3/0412 ,  H01L27/3248 ,  H01L27/3262 ,  H01L51/5203

Abstract: A display device includes a plurality of pixels arranged in a first direction and a second direction intersecting the first direction, a first wiring extending along a pixel arranged in the first direction among the plurality of pixels, and a second wiring extending along a pixel arranged in the second direction intersecting the first direction among the plurality of pixels, wherein at least of the first wiring and the second wiring includes a first conducting layer arranged contacting an insulating surface, a second conducting layer arranged above the first conducting layer, and a third conducting layer arranged contacting an upper surface and side surface of the second conducting layer and contacting a side surface of the first conducting layer, an end part of the third conducting layer being arranged on the insulating surface.

公开(公告)号：US20170133451A1

公开(公告)日：2017-05-11

申请号：US15280380

申请日：2016-09-29

Applicant: Japan Display Inc.

Inventor： Haruhito HAYAKAWA ,  Hiroki OHARA

IPC: H01L27/32 ,  H01L51/00

CPC classification number: H01L27/3276 ,  H01L27/3258 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2251/5338 ,  Y02E10/549

Abstract: Provided are an organic EL display device and a method of manufacturing the organic EL display device for preventing damage caused in a process of exposing terminals and for improving light extraction from the display. A glass substrate is removed from a panel that is formed by sequentially laminating a TFT substrate, a sealing film, a flexible substrate layer, and the glass substrate. A portion of the flexible substrate layer is removed that is formed on a position corresponding to a terminal part of the TFT substrate. A transparent thin film is formed on the flexible substrate layer, and a portion of the sealing film is removed by using the transparent thin film as a mask. The portion of the sealing film is formed on the position corresponding to the terminal part of the TFT substrate.

公开(公告)号：US20200135812A1

公开(公告)日：2020-04-30

申请号：US16653078

申请日：2019-10-15

Applicant: Japan Display Inc.

Inventor： Hiroki OHARA ,  Akinori KAMIYA ,  Hiraaki KOKAME

IPC: H01L27/32 ,  H01L51/52 ,  G06F3/041 ,  G06F3/044

Abstract: A display device includes a sealing film covering a display region where an image is displayed, a touch sensor layer configured to detect a touched position of the display region, the touch sensor layer including a first electrode layer that is arranged on the sealing film, a first insulating layer that is formed on the first electrode layer using a material including nitrogen, and a second electrode layer that is arranged over the first insulating layer, an overcoat covering the touch sensor layer, and a polarizing plate being arranged on the overcoat. The touch sensor layer further includes a second insulating layer configured to inhibit a reaction between nitrogen included in the first insulating layer and water included in the overcoat, the second insulating layer being formed between the first insulating layer and the overcoat using a material not including nitrogen.

公开(公告)号：US20180190823A1

公开(公告)日：2018-07-05

申请号：US15844690

申请日：2017-12-18

Applicant: Japan Display Inc.

Inventor： Hiroki OHARA

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L21/477 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/02126 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32105 ,  H01L21/477 ,  H01L27/1222 ,  H01L29/24 ,  H01L29/66969

Abstract: A manufacturing method of a semiconductor device includes forming an amorphous silicon film on an insulation surface, forming a silicon oxide film using an oxidation treatment from the amorphous silicon film, forming an oxide semiconductor layer above the silicon oxide film, forming a gate insulating film above the oxide semiconductor layer, and forming a gate electrode interposed by the gate insulating film above the oxide semiconductor layer.

公开(公告)号：US20180088390A1

公开(公告)日：2018-03-29

申请号：US15649715

申请日：2017-07-14

Applicant: Japan Display Inc.

Inventor： Hiroki OHARA

IPC: G02F1/1333 ,  G02F1/1335 ,  H01L51/50

CPC classification number: G02F1/133305 ,  G02F1/133516 ,  G02F2001/133792 ,  H01L27/3276 ,  H01L51/0097 ,  H01L51/5068 ,  H01L51/5088 ,  H01L2251/5338 ,  Y02E10/549

Abstract: There is provided a display device including a flexible substrate having a first surface and a second surface opposite to the first surface, the substrate including a display region on the first surface and a bending region on a part of the first surface or on a part of the second surface, the display region being arranged with a plurality of pixels, the bending region including an uneven pattern alternately arranged with regions, the thickness of the substrate being different in each region; and a plurality of wirings transmitting a signal for driving the plurality of pixels, each of the plurality of wirings being arranged in a top part or a bottom part of a convex portion in the uneven pattern in the bending region.

公开(公告)号：US20210408483A1

公开(公告)日：2021-12-30

申请号：US17472860

申请日：2021-09-13

Applicant: Japan Display Inc.

Inventor： Hiroki OHARA

IPC: H01L51/52 ,  H01L51/50

Abstract: A display device includes a first substrate, a display region with pixels each including a light emitting element above the first substrate, a first inorganic insulating layer covering the display region, a first organic insulating layer on the first inorganic insulating layer, a second inorganic insulating layer on the first organic insulating layer, a second organic insulating layer on the second inorganic insulating layer, a third organic insulating layer a on the second organic insulating layer, acidity of the third organic insulating layer being stronger than acidity of the second organic insulating layer, and a polarizing plate arranged on the third organic insulating layer.

公开(公告)号：US20180358426A1

公开(公告)日：2018-12-13

申请号：US16106265

申请日：2018-08-21

Applicant: Japan Display Inc.

Inventor： Hiroki OHARA

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52

CPC classification number: H01L27/3279 ,  H01L51/0097 ,  H01L51/5209 ,  H01L51/5225 ,  H01L2251/305 ,  H01L2251/5338 ,  Y02E10/549

Abstract: Provided is a highly reliable display device that does not easily cause a wiring or an interlayer insulating layer to be cracked when being folded. A display device includes a flexible substrate; a plurality of pixels arrayed on the substrate; and a wiring, provided on the substrate, transmitting a signal to drive the plurality of pixels. The wiring includes a first conductive layer having an opening pattern at least in a partial area thereof.

公开(公告)号：US20180233596A1

公开(公告)日：2018-08-16

申请号：US15881057

申请日：2018-01-26

Applicant: Japan Display Inc.

Inventor： Hiroki OHARA

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L29/7869 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78696

Abstract: A semiconductor device includes an oxide semiconductor layer above an insulating surface, a source electrode in contact with a side surface of the oxide semiconductor layer, a drain electrode in contact with a side surface of the oxide semiconductor layer, a gate insulating film above the oxide semiconductor layer and above the source electrode and the drain electrode, and a gate electrode overlapping with the oxide semiconductor layer interposed by the gate insulating film. The oxide semiconductor layer has a lower side in contact with the insulating surface and an upper side separated from the insulating surface, the lower side having a reverse tapered shape smaller than the upper side in a cross-sectional view, and the gate electrode is arranged above and outside of the source electrode and the drain electrode.

公开(公告)号：US20180233595A1

公开(公告)日：2018-08-16

申请号：US15872073

申请日：2018-01-16

Applicant: Japan Display Inc.

Inventor： Hiroki OHARA

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/321 ,  H01L21/02

Abstract: A semiconductor device includes an oxide semiconductor layer above an insulating surface, a source electrode in contact with a side surface of the oxide semiconductor layer, a drain electrode in contact with a side surface of the oxide semiconductor layer, a gate insulating film above the oxide semiconductor layer, the source electrode, and the drain electrode, and, a gate electrode overlapping with the oxide semiconductor layer interposed by the gate insulating film. The gate electrode is arranged above and outside of the source electrode and the drain electrode.

公开(公告)号：US20170256569A1

公开(公告)日：2017-09-07

申请号：US15340320

申请日：2016-11-01

Applicant: Japan Display Inc.

Inventor： Hiroki OHARA

IPC: H01L27/12 ,  H01L29/49 ,  H01L21/268 ,  H01L21/02 ,  H01L21/477 ,  H01L21/324 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1248 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/268 ,  H01L21/324 ,  H01L21/477 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided is a semiconductor device including a first transistor having an oxide semiconductor film, an interlayer film over the first transistor, and second transistor located over the interlayer film and having a semiconductor film including silicon. The interlayer film can include an inorganic insulator. The semiconductor film including silicon can contain polycrystalline silicon. The interlayer film can include an inorganic insulator.