摘要:
A test circuit for detecting a leakage defect in a circuit under test includes a test stimulus circuit operative to drive an otherwise defect-free, characteristically capacitive node in the circuit under test to a prescribed voltage level, and an observation circuit having at least one threshold and adapted for connection with at least one node in the circuit under test. The observation circuit is operative to detect a voltage level of the node in the circuit under test and to generate an output signal indicative of whether the voltage level of the node is less than the threshold. The voltage level of the node being less than the threshold is indicative of a first type of leakage defect, and the voltage level of the node being greater than the threshold is indicative of a second type of leakage defect.
摘要:
There is provided a strata manager within a 3D chip stack having two or more strata. The strata manager includes a plurality of scannable configuration registers, each being arranged on a respective one of the two or more strata for storing a set of bits. The set of bits is configured to program an operation of a corresponding one of the two or more strata on which the set of bits is stored or a device thereon. Additionally, a stratum identifier within a 3D stack and stack-wide scan circuit within a 3D stack are provided.
摘要:
A physical test integrated circuit has a plurality of repeating circuit portions corresponding to an integrated circuit design. A first of the portions is fabricated with a nominal block mask location, and additional ones of the portions are deliberately fabricated with predetermined progressive increased offset of the block mask location from the nominal block mask location. For each of the portions, the difference in threshold voltage between a first field effect transistor and a second field effect transistor is determined. The predetermined progressive increased offset of the block mask location is in a direction from the first field effect transistor to the second field effect transistor. The block mask overlay tolerance is determined at a value of the progressive increased offset corresponding to an inflection of the difference in threshold voltage from a zero difference. A method for on-chip monitoring, and corresponding circuits, are also disclosed.
摘要:
A test circuit for detecting a leakage defect in a circuit under test includes a test stimulus circuit operative to drive an otherwise defect-free, characteristically capacitive node in the circuit under test to a prescribed voltage level, and an observation circuit having at least one threshold and adapted for connection with at least one node in the circuit under test. The observation circuit is operative to detect a voltage level of the node in the circuit under test and to generate an output signal indicative of whether the voltage level of the node is less than the threshold. The voltage level of the node being less than the threshold is indicative of a first type of leakage defect, and the voltage level of the node being greater than the threshold is indicative of a second type of leakage defect.
摘要:
There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. On each of the two or more strata, the clock distribution network includes a clock grid having a plurality of sectors for providing the global clock signals to various chip locations, a multiple-level buffered clock tree for driving the clock grid and including at least a root and a plurality of clock buffers, and one or more multiplexers for providing the global clock signals to at least a portion of the buffered clock tree. Inputs of at least some of the plurality of clock buffers on each of the two or more strata are shorted together using chip-to-chip interconnects to reduce skewing of the global clock signals with respect to the various chip locations.
摘要:
There is provided a strata manager within a 3D chip stack having two or more strata. The strata manager includes a plurality of scannable configuration registers, each being arranged on a respective one of the two or more strata for storing a set of bits. The set of bits is configured to program an operation of a corresponding one of the two or more strata on which the set of bits is stored or a device thereon. Additionally, a stratum identifier within a 3D stack and stack-wide scan circuit within a 3D stack are provided.
摘要:
There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. The clock distribution network includes a plurality of clock distribution circuits, each being arranged on a respective one of the two or more strata for providing the global clock signals to various chip locations. Each of the plurality of clock distribution circuits includes a resonant circuit for providing stratum-to-stratum coupling for the clock distribution network. The resonant circuit includes at least one capacitor and at least one inductor.
摘要:
A physical test integrated circuit has a plurality of repeating circuit portions corresponding to an integrated circuit design. A first of the portions is fabricated with a nominal block mask location, and additional ones of the portions are deliberately fabricated with predetermined progressive increased offset of the block mask location from the nominal block mask location. For each of the portions, the difference in threshold voltage between a first field effect transistor and a second field effect transistor is determined. The predetermined progressive increased offset of the block mask location is in a direction from the first field effect transistor to the second field effect transistor. The block mask overlay tolerance is determined at a value of the progressive increased offset corresponding to an inflection of the difference in threshold voltage from a zero difference. A method for on-chip monitoring, and corresponding circuits, are also disclosed.
摘要:
There is provided an alternating current supply noise reducer for a 3D chip stack having two or more strata. Each of the strata has a respective one of a plurality of power distribution circuits and a respective one of a plurality of clock distribution circuits arranged thereon. The alternating current supply noise reducer includes a plurality of voltage droop sensors and a plurality of skew adjustors. The plurality of voltage droop sensors is for detecting alternating current supply noise in the plurality of power distribution circuits. One or more voltage droop sensors are respectively arranged on at least some of the strata. The plurality of skew adjusters are for delaying one or more clock signals provided by the plurality of clock distribution circuits responsive to an amount of the alternating current supply noise. Each skew adjuster is respectively arranged on the at least some of the strata.