公开(公告)号：US07709842B2

公开(公告)日：2010-05-04

申请号：US11624273

申请日：2007-01-18

申请人： Ji-sim Jung ,  Jany-yeon Kwon ,  Jong-man Kim ,  Kyung-bae Park ,  Takashi Noguchi

发明人： Ji-sim Jung ,  Jany-yeon Kwon ,  Jong-man Kim ,  Kyung-bae Park ,  Takashi Noguchi

IPC分类号： H01L31/00 ,  H01L27/14

CPC分类号： H01L27/3244 ,  H01L27/1255 ,  H01L27/3265

摘要： An organic electroluminescent display (“OELD”) includes an organic light-emitting diode (“OLED”), a circuit region, and an interlayer dielectric (“ILD”) layer. The OLED is disposed in each of a plurality of pixels arranged on a substrate. The circuit region includes two or more thin film transistors (“TFTs”) and a storage capacitor. The ILD layer has two or more insulating layers and includes a first region disposed between both electrodes of the storage capacitor and a second region covering the TFTs. At least one of the insulating layers has a window exposing the insulating layer directly beneath the at least one insulating layer so that that the ILD layer is thinner in the first region than in the second region. Accordingly, it is possible to reduce an occupation area of the storage capacitor while maintaining the necessary capacitance of the storage capacitor and expanding the area of the luminescent region.

摘要翻译： 有机电致发光显示器（“OELD”）包括有机发光二极管（“OLED”），电路区域和层间电介质（“ILD”）层。 OLED布置在布置在基板上的多个像素中的每一个中。 电路区域包括两个或多个薄膜晶体管（“TFT”）和存储电容器。 ILD层具有两个以上的绝缘层，并且包括设置在存储电容器的两个电极之间的第一区域和覆盖TFT的第二区域。 绝缘层中的至少一个具有将绝缘层直接暴露在至少一个绝缘层下方的窗口，使得ILD层在第一区域比在第二区域更薄。 因此，可以在保持存储电容器的必要电容并扩大发光区域的面积的同时减小存储电容器的占用面积。

公开(公告)号：US07700954B2

公开(公告)日：2010-04-20

申请号：US11621627

申请日：2007-01-10

申请人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

发明人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

摘要翻译： 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

公开(公告)号：US20050139919A1

公开(公告)日：2005-06-30

申请号：US10980838

申请日：2004-11-04

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/336 ,  H01L27/01 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US07923316B2

公开(公告)日：2011-04-12

申请号：US11808521

申请日：2007-06-11

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L21/00

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US07772711B2

公开(公告)日：2010-08-10

申请号：US11430117

申请日：2006-05-09

申请人： Takashi Noguchi ,  Hans S. Cho ,  Wenxu Xianyu ,  Do-young Kim ,  Jang-yeong Kwon ,  Huaxiang Yin ,  Kyung-bae Park ,  Xiaoxin Zhang

发明人： Takashi Noguchi ,  Hans S. Cho ,  Wenxu Xianyu ,  Do-young Kim ,  Jang-yeong Kwon ,  Huaxiang Yin ,  Kyung-bae Park ,  Xiaoxin Zhang

IPC分类号： H01L27/11

CPC分类号： H01L21/84 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/7842 ,  Y10S257/903

摘要： A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of . The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.

摘要翻译： 包括基板，形成在基板上的P-MOS单晶TFT的半导体器件和形成在P-MOS单晶TFT上的N-MOS单晶TFT。 P-MOS单晶TFT的源极区域和N-MOS单晶TFT的源极区域可以彼此连接。 P-MOS单晶TFT和N-MOS单晶TFT可以共用公共栅极。 此外，P-MOS单晶TFT可以包括具有（100）的晶面并且晶体方向<100的单晶硅层。 N-MOS单晶TFT可以包括与P-MOS单晶TFT的单晶硅层相同的晶体方向的单晶硅层，其拉应力大于P-MOS的单晶硅层 单晶TFT。

公开(公告)号：US07233022B2

公开(公告)日：2007-06-19

申请号：US10980838

申请日：2004-11-04

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L29/10

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20070259487A1

公开(公告)日：2007-11-08

申请号：US11808521

申请日：2007-06-11

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L21/336

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20050153476A1

公开(公告)日：2005-07-14

申请号：US11033539

申请日：2005-01-12

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H05B33/02 ,  G09F9/30 ,  H01L21/00 ,  H01L21/8242 ,  H01L27/32 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22

CPC分类号： H01L51/0097 ,  H01L27/3244 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： Provided is a flexible display including a plastic substrate and a protective layer formed on the plastic substrate. Accordingly, the plastic substrate is protected from a thermal damage due to a thermal treatment, and sufficient thermal treatment for forming a polysilicon layer can be performed. Also, a polysilicon layer having a good surface and excellent prosperities can be formed due to reflection or absorption of a laser light by the protective layer. Consequently, the performance and durability of the flexible display are greatly improved.

摘要翻译： 提供了一种柔性显示器，其包括塑料基板和形成在塑料基板上的保护层。 因此，可以防止塑料基板由于热处理而导致热损伤，并且可以进行足够的用于形成多晶硅层的热处理。 此外，由于保护层的激光的反射或吸收，可以形成具有良好表面和极好繁荣度的多晶硅层。 因此，柔性显示器的性能和耐用性大大提高。

公开(公告)号：US20070048912A1

公开(公告)日：2007-03-01

申请号：US11493182

申请日：2006-07-26

申请人： Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Hans Cho ,  Kyung-bae Park

发明人： Takashi Noguchi ,  Wenxu Xianyu ,  Xiaoxin Zhang ,  Hans Cho ,  Kyung-bae Park

IPC分类号： H01L21/84

CPC分类号： H01L21/02639 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1281 ,  H01L29/66772

摘要： Provided are a method of forming a single crystalline silicon layer, a structure including the same, and method of fabricating a thin film transistor (“TFT”) using the same. The method of forming the single crystalline silicon layer includes forming a silicon nitride layer on a substrate, forming an insulating layer on the silicon nitride layer, forming a hole in the insulating layer to a predetermined dimension, depositing a first silicon layer on an exposed bottom of the hole using a selective deposition process, depositing a second silicon layer on the insulating layer and the first silicon layer formed in the hole, and crystallizing the second silicon layer using a thermal process. In this method, a high-quality single crystalline silicon layer can be obtained.

摘要翻译： 提供了形成单晶硅层的方法，包括其的结构，以及使用其制造薄膜晶体管（“TFT”）的方法。 形成单晶硅层的方法包括在衬底上形成氮化硅层，在氮化硅层上形成绝缘层，在绝缘层中形成预定尺寸的孔，在暴露的底部上沉积第一硅层 使用选择性沉积工艺，在绝缘层上沉积第二硅层和在孔中形成的第一硅层，并使用热处理使第二硅层结晶。 在该方法中，可以获得高品质的单晶硅层。

公开(公告)号：US08124979B2

公开(公告)日：2012-02-28

申请号：US12032007

申请日：2008-02-15

申请人： Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

发明人： Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

IPC分类号： H01L27/14

CPC分类号： H01L29/78621 ,  H01L29/42384 ,  H01L2029/7863

摘要： Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

摘要翻译： 提供一种薄膜晶体管及其制造方法。 薄膜晶体管包括：下部结构; 半导体层，形成在所述下部结构上并且包括多个掺杂区域; 形成在所述半导体层上并分离的第一绝缘层和第二绝缘层; 形成在所述第一绝缘层和所述第二绝缘层上的第三绝缘层; 以及在第三绝缘层的分别对应于第一绝缘层和第二绝缘层的区域之间形成的栅极电极层。