Abstract:
A paper or sheet buffering system is provided which avoids having to shut down the entire system when the paper path or transport is overloaded. A rotating disk having an attached collection and dispensing finger(s) is used to pull excess sheets off the transport and hold them until it is suitable to dispense them back on to the transport.
Abstract:
The present invention is directed to a scanning apparatus and method for processing a substrate, wherein the scanning apparatus comprises a base portion and a rotary subsystem. The rotary subsystem comprises a first link comprising a first joint, wherein the first link is rotatably coupled to the base portion by the first joint, and a second link comprising a second joint, wherein the second link is rotatably coupled to the first link by the second joint. The first joint and the second joint are spaced a predetermined distance from one another. The second link further comprising an end effector whereon the substrate resides, and wherein the end effector is operably coupled to the second link. The end effector is further spaced from the second joint by the predetermined distance, wherein a rotation of the first link and second link in a respective first direction and second direction is operable to linearly oscillate the end effector along a linear first scan path, and wherein the rotational velocity of the first link and second link does not cross zero.
Abstract:
An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and including an opening extending through the rotation member and aligned with an opening in a wall of the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having an axis of rotation offset from an axis of rotation of the first rotation member, the second rotation member overlying the opening of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member, the third member including a rotatable drive supporting the workpiece. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.
Abstract:
A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be formed substantially consistently on the wafer. Resolving plates move with the beam as the beam is scanned up and/or down. This allows desired ions to impinge on the wafer, but blocks undesirable contaminants.
Abstract:
A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.
Abstract:
An ion implantation apparatus, system, and method are provided for a transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportation to a dual-workpiece load lock chamber. The alignment mechanism comprises a characterization device, an elevator, and two vertically-aligned workpiece supports for supporting two workpieces. First and second atmospheric robots are configured to generally simultaneously transfer two workpieces at a time between load lock modules, the alignment mechanism, and a FOUP. Third and fourth vacuum robots are configured to transfer one workpiece at a time between the load lock modules and a process module.
Abstract:
A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.
Abstract:
Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.
Abstract:
A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.
Abstract:
A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be formed substantially consistently on the wafer. Resolving plates move with the beam as the beam is scanned up and/or down. This allows desired ions to impinge on the wafer, but blocks undesirable contaminants.