公开(公告)号：US06919276B2

公开(公告)日：2005-07-19

申请号：US10423436

申请日：2003-04-24

申请人： Shen-Nan Lee ,  Ying-Ho Chen ,  Syun-Ming Jang ,  Tzu-Jen Chou ,  Jin-Yiing Song

发明人： Shen-Nan Lee ,  Ying-Ho Chen ,  Syun-Ming Jang ,  Tzu-Jen Chou ,  Jin-Yiing Song

IPC分类号： H01L21/321 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/7684 ,  H01L21/3212

摘要： A CMP process for selectively polishing an overlying material layer with an underlying layer comprising at least one material in a semiconductor device fabrication process including providing a semiconductor wafer process surface including a first material layer overlying a second layer including one material; mixing at least two slurry mixtures including a first CMP slurry formulation optimized for removing the first material layer and a second CMP slurry formulation optimized for removing the at least a second layer to form a slurry formulation mixture; and, carrying out a CMP process using the slurry formulation mixture to remove the first material layer and at least a portion of the at least a second layer.

摘要翻译： 一种CMP工艺，用于在半导体器件制造工艺中用包括至少一种材料的下层选择性地抛光覆盖材料层，所述半导体器件制造工艺包括提供包括覆盖包括一种材料的第二层的第一材料层的半导体晶片工艺表面; 混合至少两种浆料混合物，其包括为了除去第一材料层而优化的第一CMP浆料配制剂和优化用于除去至少第二层以形成浆料配制混合物的第二CMP浆料配制剂; 以及使用所述浆料制剂混合物进行CMP处理以去除所述第一材料层和所述至少第二层的至少一部分。

公开(公告)号：US06500753B2

公开(公告)日：2002-12-31

申请号：US09838209

申请日：2001-04-20

申请人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

发明人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

IPC分类号： H01L218238

CPC分类号： H01L21/7684 ,  H01L21/76838 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention teaches the addition of copper lines, these copper lines to be added to isolated copper lines or to selected copper lines within a collection of copper lines. The invention also teaches the addition of copper end caps to isolated copper lines or to selected copper lines within a collection of copper lines. The invention further teaches the widening of copper lines for isolated copper lines or selected copper lines within a collection of copper lines.

摘要翻译： 本发明教导了铜线的添加，这些铜线被添加到隔离铜线或铜线集合内的选定铜线。 本发明还教导了将铜端盖添加到铜线集合中的隔离铜线或铜线。 本发明进一步教导了铜线集合中用于隔离铜线或选定铜线的铜线的扩大。

公开(公告)号：US06409587B1

公开(公告)日：2002-06-25

申请号：US09713827

申请日：2000-11-15

申请人： Tsu Shih ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Wen-Chih Chiou

发明人： Tsu Shih ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Wen-Chih Chiou

IPC分类号： B24D1100

CPC分类号： B24D11/08 ,  B24B21/04 ,  B24B37/24 ,  G06T9/007

摘要： A composite, dual-hardness polishing pad for use in a linear chemical mechanical polishing apparatus and a method for forming the pad are described. In the composite, dual-hardness polishing pad, a pad body is first provided which has a leading edge and a trailing edge for mounting to a linear belt immediately adjacent to a second polishing pad. The pad body is fabricated of a material that has a first hardness, the leading edge contacts an object being polished on the composite polishing pad before the trailing edge when the linear belt turns in a linear polishing process. The composite polishing pad further includes a buffer pad that is adhesively joined to the leading edge of the pad body for contacting the object that is being polished, the buffer pad may be fabricated of a material that has a second hardness which is at least 20% smaller than the first hardness such that impact on the object being polished is minimized during a linear polishing process. The present invention is further directed to a method for adhesively joining a buffer pad to a pad body of a polishing pad.

摘要翻译： 描述了用于线性化学机械抛光装置的复合双硬度抛光垫和用于形成垫的方法。 在复合材料双硬度抛光垫中，首先提供具有前缘和后缘的垫体，用于安装在紧邻第二抛光垫的线性带上。 垫体由具有第一硬度的材料制成，当线性带在线性抛光过程中转动时，前缘在后缘之前在复合抛光垫上接触待抛光的物体。 所述复合抛光垫还包括缓冲垫，所述缓冲垫粘合地连接到所述垫体的前缘以接触被抛光的物体，所述缓冲垫可以由具有至少20％的第二硬度的材料制成， 小于第一硬度，使得在线性抛光工艺期间对被抛光物体的冲击最小化。 本发明还涉及一种用于将缓冲垫粘合地结合到抛光垫的衬垫体的方法。

公开(公告)号：US06358119B1

公开(公告)日：2002-03-19

申请号：US09336808

申请日：1999-06-21

申请人： Tsu Shih ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： Tsu Shih ,  Jih-Churng Twu ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： B24B100

CPC分类号： B24B37/12 ,  B24B37/015 ,  B24B55/02

摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

摘要翻译： 本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

公开(公告)号：US06634930B1

公开(公告)日：2003-10-21

申请号：US09635013

申请日：2000-08-09

申请人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang ,  Chia-Ming Yang

发明人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang ,  Chia-Ming Yang

IPC分类号： B24B100

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A method for preventing copper corrosion on a wafer during a chemical mechanical polishing process when the process is temporarily halted due to equipment malfunction and an apparatus for carrying out such method are disclosed. In the method, after the chemical mechanical polishing process is stopped for correcting equipment malfunction or any other processing problems, a cleaning solvent is sprayed toward the wafer surface to remove substantially all slurry solution from the surface to prevent corrosion of the copper layer, or other metal layer, by the slurry solution. The cleaning solvent may be sprayed from spray nozzles mounted around and juxtaposed to the polishing table onto which the polishing pad is mounted as long as the spray nozzles do not interfere with the rotation of the polishing pad.

摘要翻译： 本发明公开了一种在化学机械抛光工艺中由于设备故障暂时停止处理而在晶片上进行铜腐蚀的方法及其实施方法。 在该方法中，在化学机械抛光处理停止以纠正设备故障或任何其它处理问题之后，向晶片表面喷射清洗溶剂，以从表面去除基本上所有的浆液，以防止铜层或其它 金属层，通过浆料溶液。 只要喷嘴不干扰抛光垫的旋转，清洁溶剂可以从安装在其周围的喷嘴喷射并且并列在抛光台上，抛光垫安装在抛光台上。

公开(公告)号：US06620725B1

公开(公告)日：2003-09-16

申请号：US09395287

申请日：1999-09-13

申请人： Shau-Lin Shue ,  Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Ying-Ho Chen ,  Tsu Shih ,  Jih-Churng Twu ,  Syun-Ming Jang

发明人： Shau-Lin Shue ,  Ming-Hsing Tsai ,  Wen-Jye Tsai ,  Ying-Ho Chen ,  Tsu Shih ,  Jih-Churng Twu ,  Syun-Ming Jang

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/3212

摘要： A process for performing CMP in two steps is described. After trenches have been formed and over-filled with copper, in a first embodiment of the invention a hard pad is used initially to remove most of the copper until a point is reached where dishing effects would begin to appear. A soft pad is then substituted and CMP continued until all copper has been removed, except in the trenches. In a second embodiment, CMP is initiated using a pad to which high-pressure is applied and which rotates relatively slowly. As before, this combination is used until the point is reached where dishing effects would begin to appear. Then, relatively low pressure in combination with relatively high rotational speed is used until all copper has been removed, except in the trenches. Both of these embodiments result in trenches which are just-filled with copper, with little or no dishing effects, and with all traces of copper removed everywhere except in the trenches themselves.

摘要翻译： 描述用于在两个步骤中执行CMP的过程。 在沟槽已经形成并且用铜过度填充之后，在本发明的第一实施例中，最初使用硬焊盘去除大部分铜，直到达到一个点，其中凹陷效应将开始出现。 然后取代软焊盘，继续CMP直到除了沟槽中除去所有的铜。 在第二实施例中，使用施加高压并且相对缓慢地旋转的衬垫来启动CMP。 如前所述，使用这种组合，直到达到点，其中凹陷效应将开始出现。 然后，除了沟槽之外，使用相对较低的压力结合相对高的转速直到除去所有的铜。 这两个实施例都导致刚好填充铜的沟槽，几乎没有凹陷效应，并且除了沟槽本身之外，所有痕迹的铜都被去除。

公开(公告)号：US06417106B1

公开(公告)日：2002-07-09

申请号：US09431150

申请日：1999-11-01

申请人： Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

发明人： Jih-Churng Twu ,  Ying-Ho Chen ,  Tsu Shih ,  Syun-Ming Jang

IPC分类号： H01L21302

CPC分类号： H01L21/7684 ,  H01L21/76829

摘要： A process for reducing dishing in damascene structures formed in low k organic dielectrics is described. A key feature is the insertion of a liner layer between the low k dielectric layer and the etch stop layer. The only requirement for the liner material is that it should have different etching characteristics from the etch stop material so that when trenches are etched in the dielectric they extend as far as the etch stop layer, in the normal way. When this is done it is found that dishing, after CMP, is significantly reduced, particularly for trench structures made up of multiple narrow trenches spaced close together.

摘要翻译： 描述了一种用于减少在低k有机电介质中形成的镶嵌结构中的凹陷的方法。 一个关键特征是在低k电介质层和蚀刻停止层之间插入衬里层。 衬垫材料的唯一要求是它应该具有与蚀刻停止材料不同的蚀刻特性，使得当在电介质中蚀刻沟槽时，它们以正常方式延伸到蚀刻停止层的最远处。 当这样做时，发现在CMP之后的凹陷显着减少，特别是对于由几个间隔得很近的窄沟槽组成的沟槽结构。

公开(公告)号：US06365523B1

公开(公告)日：2002-04-02

申请号：US09177188

申请日：1998-10-22

申请人： Syun-Ming Jang ,  Chu-Yun Fu ,  Ying-Ho Chen

发明人： Syun-Ming Jang ,  Chu-Yun Fu ,  Ying-Ho Chen

IPC分类号： H01L21302

CPC分类号： H01L21/76229 ,  H01L21/31053 ,  H01L21/31612

摘要： A method for forming a series of patterned planarized aperture fill layers within a series of apertures within a topographic substrate layer employed within a microelectronics fabrication. There is first provided a topographic substrate layer employed within a microelectronics fabrication, where the topographic substrate layer comprises a series of mesas of substantially equivalent height but of differing widths and the series of mesas is separated by a series of apertures. There is then formed upon the topographic substrate layer a blanket first aperture fill layer. The blanket first aperture fill layer is formed employing a first simultaneous deposition and sputter method. The blanket first aperture fill layer fills the series of apertures to a planarizing thickness at least as high as the height of the mesas while simultaneously forming a series of protrusions of the blanket first aperture fill layer corresponding with the series of mesas, where the thickness of a protrusion of the blanket first aperture fill layer over a narrow mesa is less than the thickness of a protrusion of the blanket first aperture fill layer over a wide mesa. The first simultaneous deposition and sputter method employs a first deposition rate:sputter rate ratio which provides sufficient thickness of the blanket first aperture fill layer over the narrow mesa such that upon chemical mechanical polish (CMP) planarizing the blanket first aperture fill layer to form a series of patterned planarized first aperture fill layers within the series of apertures erosion of the narrow mesa is attenuated. Finally, there is then chemical mechanical polish (CMP) planarized the blanket first aperture fill layer to form the series of patterned planarized first aperture fill layers within the series of apertures.

摘要翻译： 一种用于在微电子学制造中使用的地形衬底层内的一系列孔内形成一系列图案化的平坦化孔填充层的方法。 首先提供了在微电子制造中使用的地形衬底层，其中地形衬底层包括基本上等同的高度但具有不同宽度的一系列台面，并且一系列台面由一系列孔分隔开。 然后在地形衬底层上形成毯子第一孔填充层。 毯子第一孔填充层使用第一同时沉积和溅射方法形成。 毯子第一孔填充层将一系列孔填充至至少与台面的高度相同的平坦化厚度，同时形成与一系列台面相对应的毯子第一孔填充层的一系列突起，其中厚度 毯子第一孔填充层在窄台面上的突起小于宽台面上的第一孔填充层的突起的厚度。 第一同时沉积和溅射方法使用第一沉积速率：溅射速率比，其在窄台面上提供足够厚度的第一孔填充层，使得在化学机械抛光（CMP）上平坦化第一孔填充层以形成 一系列图案化的平面化的第一孔径填充层在一系列孔径内的狭窄台面的侵蚀被衰减。 最后，然后是化学机械抛光（CMP）平坦化第一孔填充层，以在一系列孔内形成一系列图案化的平坦化的第一孔填充层。

公开(公告)号：US06239023B1

公开(公告)日：2001-05-29

申请号：US09320757

申请日：1999-05-27

申请人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

发明人： Syun-Ming Jang ,  Ying-Ho Chen ,  Jih-Churng Twu ,  Chen-Hua Yu

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/76838 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention teaches the addition of copper lines, these copper lines to be added to isolated copper lines or to selected copper lines within a collection of copper lines. The invention also teaches the addition of copper end caps to isolated copper lines or to selected copper lines within a collection of copper lines. The invention further teaches the widening of copper lines for isolated copper lines or selected copper lines within a collection of copper lines.

公开(公告)号：US5731241A

公开(公告)日：1998-03-24

申请号：US857160

申请日：1997-05-15

申请人： Syun-Ming Jang ,  Ying-Ho Chen ,  Chen-Hua Yu

发明人： Syun-Ming Jang ,  Ying-Ho Chen ,  Chen-Hua Yu

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76232 ,  Y10S148/05

摘要： The present invention provides a method of manufacturing a sacrificial self aligned sub-atmospheric chemical vapor deposition (SACVD) O.sub.3 TEOS layer 50 70 over a trench oxide 40 to protect the trench oxide from excessive subsequent etch steps. The SACVD O.sub.3 TEOS layer has a higher deposition rate over the trench oxide layer 40 than over the surrounding non-trench thermally grown pad oxides. The trench oxide is preferably formed using a process of PECVD, LPTEOS, or O.sub.3 -TEOS. The invention provides two preferred embodiments: (1) a first self aligned sacrificial O.sub.3 TEOS oxide layer 50 deposited before the pad oxide etch and (2) a second self aligned sacrificial O.sub.3 TEOS oxide layer 70 deposited before the sacrificial implant oxide etch. The invention can be applied in a variety of situations where the trench oxide is exposed to damaging etches.

摘要翻译： 本发明提供了一种在沟槽氧化物40上制造牺牲自对准亚大气压化学气相沉积（SACVD）O3 TEOS层5070的方法，以保护沟槽氧化物免于过多的后续蚀刻步骤。 SACVD O3 TEOS层在沟槽氧化物层40上的沉积速率高于周围的非沟槽热生长焊盘氧化物。 沟槽氧化物优选使用PECVD，LPTEOS或O3-TEOS的工艺形成。 本发明提供了两个优选实施例：（1）在氧化层蚀刻之前沉积的第一自对准牺牲O 3 TEOS氧化物层50和（2）在牺牲注入氧化物蚀刻之前沉积的第二自对准牺牲O 3 TEOS氧化物层70。 本发明可以应用于各种情况，其中沟槽氧化物暴露于有害蚀刻。