摘要:
A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.
摘要:
An acrylate resin containing fluorinated alkyl groups in ester side chains has high transmittance to VUV radiation. A resist composition using the resin as a base polymer is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for lithographic microprocessing.
摘要:
Styrene derivatives of formula (1) are novel wherein R1 is H, F, C1-20 alkyl or fluorinated C1-20 alkyl, R2 in cis or trans conformation is F, C1-20 alkyl or fluorinated C1-20 alkyl, R3 is a phenol protecting group, p, q and r are integers in the range of 0≦p
摘要:
Polymers comprising recurring units of an acrylic derivative of fluorinated backbone represented by formula (1) are novel. R1, R2 and R3 are independently H, F, C1-20 alkyl or fluorinated C1-20 alkyl, at least one of R1, R2 and R3 contains fluorine, and R4 is a hydrophilic group. Using the polymers, chemical amplification positive resist compositions featuring low absorption of F2 excimer laser light are obtained.
摘要:
A polymer having fluorinated vinyl phenol units copolymerized with acrylonitrile units has high transmittance to VUV radiation. A resist composition using the polymer as a base resin has high sensitivity and resolution to high-energy radiation and good plasma etching resistance and is suited for lithographic microprocessing.
摘要:
Polymers comprising recurring units of formula (1) and recurring units having acid labile groups are novel. At least one of R1 and R2 is fluorine or a trifluoromethyl group, and the remainder is hydrogen or a C1-20 alkyl, R3 and R4 each are hydrogen or an unsubstituted or fluorine-substituted C1-20 alkyl, or R3 and R4 may form a ring. Using such polymers, resist compositions featuring transparency to excimer laser light and alkali solubility are obtained.
摘要:
A protective coating composition comprising a polymer of acyl-protected hexafluoroalcohol structure as a base polymer, optionally in admixture with a second polymer containing sulfonic acid amine salt in recurring units is applied onto a resist film. The protective coating is transparent to radiation of wavelength up to 200 nm.
摘要:
A copolymer of an alkali-soluble (α-trifluoromethyl)-acrylate and a norbornene derivative is useful as an additive to a resist composition. When processed by immersion lithography, the resist composition exhibits excellent water repellency and water slip and forms a pattern with few development defects.
摘要:
The present invention relates to a resist top coat composition and a patterning process adopting such a material, which resist top coat composition is provided for forming a top coat on a photoresist film so as to protect the photoresist film, in liguid immersion photolithography. The present invention provides a resist top coat composition for forming a top coat on a photoresist film, wherein the resist top coat composition comprises, at least: a polymer I including a repeating unit a represented by the following general formula (1); and a polymer II including repeating unit having a sulfonic acid or an amine salt of a sulfonic acid:
摘要:
A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure.