Light emitting device and fabricating method thereof
    12.
    发明授权
    Light emitting device and fabricating method thereof 有权
    发光元件及其制造方法

    公开(公告)号:US06706544B2

    公开(公告)日:2004-03-16

    申请号:US09837324

    申请日:2001-04-19

    IPC分类号: H01L2100

    摘要: The light emitting device according to the present invention is characterized in that a gate electrode comprising plurality of conductive films is formed, and concentration of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.

    摘要翻译: 根据本发明的发光器件的特征在于,形成包括多个导电膜的栅电极,并且通过利用蚀刻中的导电膜的选择性来调整有源层中的杂质区域的浓度,并将它们用作 面具 本发明减少了相对于制造用于提高发光装置的产量的TFT并缩短其制造术语的光刻步骤的数量,通过该步骤,廉价地提供了发光装置和电子设备。

    Electronic device with light emission for a display
    16.
    发明授权
    Electronic device with light emission for a display 有权
    具有显示器发光的电子设备

    公开(公告)号:US08017944B2

    公开(公告)日:2011-09-13

    申请号:US10742872

    申请日:2003-12-23

    IPC分类号: H01L29/04

    摘要: There is provided an electronic device in which the deterioration of the device is prevented and an aperture ratio is improved without using a black mask and without increasing the number of masks. In the electronic device, a first electrode (113) is disposed on another layer different from the layer on which a gate wiring (145) is disposed as a gate electrode, and a semiconductor layer of a pixel switching TFT is superimposed on the gate wiring (145) so as to be shielded from a light. Thus, the deterioration of the TFT is suppressed, and a high aperture ratio is realized.

    摘要翻译: 提供了一种电子设备,其中防止了设备的劣化,并且在不使用黑色掩模的情况下提高了孔径比,并且不增加掩模的数量。 在电子设备中,第一电极(113)设置在不同于其上设置有栅极布线(145)的层作为栅电极的另一层上,并且像素开关TFT的半导体层叠加在栅极布线 (145),以便被遮光。 因此,抑制了TFT的劣化,并且实现了高的开口率。

    Light emitting device and manufacturing method thereof
    18.
    发明授权
    Light emitting device and manufacturing method thereof 有权
    发光元件及其制造方法

    公开(公告)号:US07820464B2

    公开(公告)日:2010-10-26

    申请号:US12408194

    申请日:2009-03-20

    IPC分类号: H01L21/00

    摘要: The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.

    摘要翻译: 根据本发明的发光器件的特征在于,形成包括多个导电膜的栅电极,并且利用蚀刻中的导电膜的选择性并使用它们来调节有源层中的杂质区域的浓度 作为面具。 本发明减少了相对于制造用于提高发光装置的产量的TFT并缩短其制造术语的光刻步骤的数量,通过该步骤,廉价地提供了发光装置和电子设备。