Variable configuration articulated tracked vehicle
    11.
    发明申请
    Variable configuration articulated tracked vehicle 有权
    可变配置铰接跟踪车辆

    公开(公告)号:US20070029117A1

    公开(公告)日:2007-02-08

    申请号:US11196486

    申请日:2005-08-04

    CPC classification number: B62D55/075 B62D55/10 B62D55/12 B62D55/14

    Abstract: A variable configuration articulated tracked vehicle comprises a chassis, a pair of right and left drive pulleys, a right and left planetary wheel, a right and left track, a right and left arm mechanism, and a right and left drive motor. The drive pulleys are rotatably attached to the chassis and each pair of drive pulleys is in the same plane. The planetary wheels are movable relative to the chassis such that each planetary wheel is in the same plane as its respective drive pulleys. The tracks extend around the pair of drive pulleys and the planetary wheel on the respective sides. The arm mechanisms connect the respective planetary wheel to the chassis. Each arm mechanism is rotatably attached to the chassis with a cam. The cam defines a motion path of one end of the arm whereby the motion of the planetary wheel provides a path for the planetary wheel such that the track path defined by the respective drive pulleys and the planetary wheel is a constant track length. The motors are each operably connected to the respective pair of drive pulleys for driving the track.

    Abstract translation: 可变配置的铰接跟踪车辆包括底架,左右一对驱动滑轮,左右行星轮,左右轨道,右侧和左侧臂机构以及左右驱动马达。 驱动滑轮可旋转地附接到底盘,并且每对驱动滑轮在同一平面内。 行星轮相对于底盘可移动,使得每个行星轮与其相应的驱动滑轮处于同一平面。 轨道围绕该对驱动滑轮和相应侧面上的行星轮延伸。 臂机构将相应的行星轮连接到底盘。 每个臂机构用凸轮可旋转地附接到底盘。 凸轮限定臂的一端的运动路径,由此行星轮的运动为行星轮提供路径,使得由相应的驱动滑轮和行星轮限定的轨道路径是恒定的轨道长度。 电动机各自可操作地连接到相应的一对驱动滑轮,用于驱动轨道。

    Semiconductor device with transistor and capacitor and its manufacture method
    12.
    发明授权
    Semiconductor device with transistor and capacitor and its manufacture method 有权
    具有晶体管和电容器的半导体器件及其制造方法

    公开(公告)号:US07112839B2

    公开(公告)日:2006-09-26

    申请号:US10845153

    申请日:2004-05-14

    Abstract: On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A temporary protective film is formed over the capacitor, the temporary protective film covering the capacitor. The semiconductor substrate with the temporary protective film is subjected to a heat treatment in a reducing atmosphere. The temporary protective film is removed. The semiconductor substrate with the temporary protective film removed is subjected to a heat treatment in an inert gas atmosphere or in a vacuum state. A protective film is formed over the capacitor, the protective film covering the capacitor. With these processes, leak current of the capacitor can be reduced.

    Abstract translation: 在半导体衬底上,形成与晶体管电连接的晶体管和电容器,该电容器具有由金属制成的两个电极和由氧化物介电材料制成的两个电极之间的电容器电介质层。 在电容器上形成临时保护膜,临时保护膜覆盖电容器。 具有临时保护膜的半导体衬底在还原气氛中进行热处理。 移除临时保护膜。 将除去了临时保护膜的半导体基板在惰性气体气氛或真空状态下进行热处理。 在电容器上形成保护膜,保护膜覆盖电容器。 通过这些处理,可以减小电容器的漏电流。

    Circuit board orientation with different width portions
    13.
    发明授权
    Circuit board orientation with different width portions 有权
    具有不同宽度部分的电路板方向

    公开(公告)号:US07035111B1

    公开(公告)日:2006-04-25

    申请号:US10444330

    申请日:2003-05-23

    CPC classification number: G06F1/184 G06F1/18 H05K7/1487

    Abstract: A circuit board contained in a circuit board holder forms a server blade that fits into a bay of a server blade enclosure. The circuit board permits standard electrical components to fit within the cross-sectional width of the server blade. The server blade in cross section may be generally triangular, L-shaped or another type of polygon that permits placement of tall components that otherwise would not fit in a generally rectangular server blade.

    Abstract translation: 包含在电路板保持器中的电路板形成适合于服务器刀片外壳的托架的服务器刀片。 电路板允许标准电气部件装配在服务器刀片的横截面宽度内。 横截面的服务器刀片可以是大致三角形的,L形的或另一种类型的多边形,其允许放置另外不适合于大致矩形的服务器刀片的高部件。

    Coating composition having improved acid etch resistance
    14.
    发明授权
    Coating composition having improved acid etch resistance 有权
    具有改善耐酸蚀性的涂料组合物

    公开(公告)号:US06379807B1

    公开(公告)日:2002-04-30

    申请号:US09707573

    申请日:2000-11-07

    Abstract: The present invention is directed to a coating composition particularly useful as a clear coating applied over a pigmented base coating, wherein the clear coating has improved resistance to marring and to acid etching when exposed to natural weathering conditions. The clear coating is particularly useful as an automotive OEM clear coating or as a refinish clear coating. The coating has two components. Component A of the coating composition includes a melamine and an acrylosilane polymer of a polymerized monomers mixture, which includes an alkyl methacrylate, an alkyl acrylate, cycloaliphatic alkyl methacrylate, cycloaliphatic alkyl acrylate, styrene or any mixture of these monomers; hydroxy alkyl methacrylate, hydroxy alkyl acrylate or any mixtures of these monomers; and a mono-ethylenically unsaturated silane monomer. Component B of the composition includes an organic polyisocyanate as a crosslinking agent.

    Abstract translation: 本发明涉及一种涂料组合物,其特别可用作涂覆在着色基底涂料上的透明涂层,其中透明涂层在暴露于自然风化条件下时具有改善的耐磨性和酸蚀刻性。 透明涂层特别适用于汽车OEM透明涂层或透明涂层。 涂层有两个部件。 涂料组合物的组分A包括聚合单体混合物的三聚氰胺和丙烯硅烷聚合物,其包括甲基丙烯酸烷基酯,丙烯酸烷基酯,甲基丙烯酸环脂基烷基酯,丙烯酸环脂族烷基酯,苯乙烯或这些单体的任何混合物; 羟基烷基甲基丙烯酸酯,丙烯酸羟基烷基酯或这些单体的任何混合物; 和单烯属不饱和硅烷单体。 组合物的组分B包含作为交联剂的有机多异氰酸酯。

    Anti-angiogenesis fusion proteins
    17.
    发明授权
    Anti-angiogenesis fusion proteins 有权
    抗血管生成融合蛋白

    公开(公告)号:US08926972B2

    公开(公告)日:2015-01-06

    申请号:US12727188

    申请日:2010-03-18

    CPC classification number: C07K14/71 A61K38/00 C07K2319/30

    Abstract: The disclosure provides a novel anti-angiogenesis fusion protein. The present invention combines a chimeric vascular endothelial cell growth factor (VEGF) receptor or a fragment thereof with a multimerizing component, which have a superior binding capacity with human VEGF and placental growth factor (PIGF). The fusion protein has improved stability, prolonged half-life and the ability to form multivalent interactions with VEGF, and can be used for anti-angiogenesis, treating VEGF related diseases and inhibiting tumor growth.

    Abstract translation: 本公开提供了一种新的抗血管生成融合蛋白。 本发明将嵌合血管内皮细胞生长因子(VEGF)受体或其片段与多聚化成分组合,其与人VEGF和胎盘生长因子(PIGF)具有优异的结合能力。 融合蛋白具有改善的稳定性,延长的半衰期和与VEGF形成多价相互作用的能力,并且可用于抗血管生成,治疗VEGF相关疾病和抑制肿瘤生长。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    18.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20100006913A1

    公开(公告)日:2010-01-14

    申请号:US12499197

    申请日:2009-07-08

    Abstract: A semiconductor device includes: a semiconductor substrate including a trench; a capacitor electrode formed in the trench; a first insulation film formed on a bottom of the trench and between the semiconductor substrate and the capacitor electrode; a second insulation film formed on a side wall of the trench and between the semiconductor substrate and the capacitor electrode; and a first metal oxide film formed at the bottom of the trench and between the capacitor electrode and the first insulation film.

    Abstract translation: 半导体器件包括:包括沟槽的半导体衬底; 形成在沟槽中的电容器电极; 形成在所述沟槽的底部和所述半导体衬底与所述电容器电极之间的第一绝缘膜; 形成在所述沟槽的侧壁上以及所述半导体衬底和所述电容器电极之间的第二绝缘膜; 以及形成在所述沟槽的底部以及所述电容器电极与所述第一绝缘膜之间的第一金属氧化物膜。

    Fabrication process of a semiconductor device having a capacitor
    19.
    发明授权
    Fabrication process of a semiconductor device having a capacitor 有权
    具有电容器的半导体器件的制造工艺

    公开(公告)号:US07592216B2

    公开(公告)日:2009-09-22

    申请号:US12127067

    申请日:2008-05-27

    CPC classification number: H01L27/0629 H01L27/0802 H01L27/0805 H01L28/40

    Abstract: A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall surface of the first trench, forming a semiconductor film to cover the first trench, a resistor device region of the semiconductor substrate and a logic device region of the semiconductor substrate, introducing a first impurity element into the semiconductor film formed over the first trench, patterning the semiconductor film to form a top electrode in the capacitor device region, a resistor in the resistor device region and a gate electrode in the logic device region, annealing the semiconductor substrate, and introducing a second impurity element in the resistor.

    Abstract translation: 一种制造半导体器件的方法包括在半导体衬底的电容器器件区域中形成第一沟槽,在第一沟槽的侧壁表面上形成电容器绝缘膜,形成覆盖第一沟槽的半导体膜,电阻器器件区域 的半导体衬底和半导体衬底的逻辑器件区域,在第一沟槽上形成的半导体膜中引入第一杂质元素,对半导体膜进行构图以在电容器器件区域中形成顶电极,电阻器件中的电阻器 区域和逻辑器件区域中的栅电极,退火半导体衬底,并在电阻器中引入第二杂质元素。

    Clear coating compositions comprising dispersed silica nono-particles and processes for using
    20.
    发明申请
    Clear coating compositions comprising dispersed silica nono-particles and processes for using 有权
    包含分散二氧化硅非微粒的透明涂料组合物和使用方法

    公开(公告)号:US20070292623A1

    公开(公告)日:2007-12-20

    申请号:US11818456

    申请日:2007-06-14

    Applicant: Jun Lin

    Inventor: Jun Lin

    CPC classification number: C09D1/00 C08K3/36 C08K9/06 C09D201/005 H05K3/285

    Abstract: Disclosed herein is a clear coating composition comprising a dispersion of silica nano-particles prepared from silica nano-particles having reactive silane groups of 1-500 nm particle size, and at least 0.001 parts by weight of oligomer having at least two groups reactive with the silica nano-particles, or oligomer in combination with a film forming polymer, a low molecular weight coupling agent, or a combination of a film forming polymer and a low molecular weight coupling agent.

    Abstract translation: 本文公开了一种透明涂料组合物,其包含由具有1-500nm粒度的反应性硅烷基团的二氧化硅纳米颗粒制备的二氧化硅纳米颗粒的分散体和至少0.001重量份具有至少两个与 二氧化硅纳米颗粒或低聚物与成膜聚合物,低分子量偶联剂或成膜聚合物和低分子量偶联剂的组合组合。

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