摘要:
A method for operating a controller may include storing a pseudo noise (PN) sequence provided from a PN sequence generator in an i-th area of a seed table and cyclically shifting the PN sequence from the i-th area to an (i+1)-th area in the table to form the table. The table may include row and column areas. A method for operating a controller may include receiving a sequence from a sequence generator, splitting the sequence into seed units, storing split sequences in a j-th area of the seed table, and forming the table including the seed units corresponding to the split sequences stored in the j-th area. A method for operating a controller may include storing a sequence provided from a sequence generator in a seed table that includes a plurality of areas and cyclically shifting the sequence in the table until a seed is formed in each area.
摘要:
A method for operating a controller may include storing a pseudo noise (PN) sequence provided from a PN sequence generator in an i-th area of a seed table and cyclically shifting the PN sequence from the i-th area to an (i+1)-th area in the table to form the table. The table may include row and column areas. A method for operating a controller may include receiving a sequence from a sequence generator, splitting the sequence into seed units, storing split sequences in a j-th area of the seed table, and forming the table including the seed units corresponding to the split sequences stored in the j-th area. A method for operating a controller may include storing a sequence provided from a sequence generator in a seed table that includes a plurality of areas and cyclically shifting the sequence in the table until a seed is formed in each area.
摘要:
The storage device includes a storage unit configured to store data, an error controlling unit configured to correct an error of the data read out from the storage unit according to at least one read level, and a read level controlling unit configured to control the at least one read level when the error is uncorrectable. The read level controlling unit is configured to measure a distribution of memory cells of the storage unit, configured to filter the measured distribution, and configured to reset the at least one read level based on the filtered distribution.
摘要:
A storage device includes a non-volatile memory device outputting read data from a source area and a memory controller configured to execute an ECC operation on a plurality of vectors in the read data and to write the error-corrected read data into target area of the non-volatile memory device. The memory controller declares that a vector corresponding to a clean area is decoding pass without using a flag bit among the plurality of vectors during the error correction operation.
摘要:
The storage device includes a storage unit configured to store data, an error controlling unit configured to correct an error of the data read out from the storage unit according to at least one read level, and a read level controlling unit configured to control the at least one read level when the error is uncorrectable. The read level controlling unit is configured to measure a distribution of memory cells of the storage unit, configured to filter the measured distribution, and configured to reset the at least one read level based on the filtered distribution.
摘要:
A data storage device includes a non-volatile memory device including a plurality of memory cells and a memory controller. The memory controller is configured to modify an arrangement of program data and to program the modified program data into the plurality of memory cells. The memory controller modifies the program data to eliminate a given data pattern causing physical interference between adjacent memory cells from the modified program data.
摘要:
Provided is a data processing method in a semiconductor memory device. The data processing method arranges data, which is to be programmed in a row and column of a nonvolatile memory device, in a row or column direction. The data processing method encodes the programmed data into a modulation code in the row or column direction such that adjacent pairs of memory cells of the nonvolatile memory device are prevented from being programmed into first and second states.
摘要:
A data storage device includes a non-volatile memory device including a plurality of memory cells and a memory controller. The memory controller is configured to modify an arrangement of program data and to program the modified program data into the plurality of memory cells. The memory controller modifies the program data to eliminate a given data pattern causing physical interference between adjacent memory cells from the modified program data.
摘要:
A memory device includes a plurality of multi-bit memory cells. A plurality of input data bits are encoded according to an error correction code to generate a codeword including a plurality of groups of bits. Respective ones of the plurality of multi-bit memory cells are programmed to represent respective ones of the groups of bits of the codeword. The groups of bits of the codeword may be groups of consecutive bits. In some embodiments, the multi-bit memory cells are each configured to store in bits and a length of the codeword is an integer multiple of m. Data may be read from the multi-bit memory cells in page units or cell units to recover the codeword, and the recovered code word may be decode according to the error correction code to recover the input data bits.
摘要:
A memory device includes a memory cell array, a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme, and a control logic configured to control programming of the interleaved data in the memory cell array.