公开(公告)号：US20160380186A1

公开(公告)日：2016-12-29

申请号：US15259855

申请日：2016-09-08

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi DAIBOU ,  Yushi KATO ,  Shumpei OMINE ,  Naoki HASE ,  Junichi ITO

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/08 ,  G01R33/098 ,  G11B5/3909 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.

Abstract translation: 根据实施例的磁阻元件包括堆叠结构，所述堆叠结构包括：包含Mn和至少一种Ga，Ge或Al元素的第一磁性层; 第二磁性层; 设置在所述第一磁性层和所述第二磁性层之间的第一非磁性层; 设置在所述第一磁性层和所述第一非磁性层之间的第三磁性层; 以及设置在第一磁性层和第三磁性层之间的第二非磁性层，第二非磁性层含有Mg，Ba，Ca，C，Sr，Sc，Y，Gd，Tb，Dy，Ce，Ho中的至少一种元素 ，Yb，Er或B.

公开(公告)号：US20160148975A1

公开(公告)日：2016-05-26

申请号：US15010669

申请日：2016-01-29

Applicant: Kabushiki Kaisha Toshiba ,  National University Corporation Tohoku University

Inventor： Yushi KATO ,  Tadaomi DAIBOU ,  Eiji KITAGAWA ,  Takao OCHIAI ,  Junichi ITO ,  Takahide KUBOTA ,  Shigemi MIZUKAMI ,  Terunobu MIYAZAKI

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer including (MnxGay)100-zCoz (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm %

Abstract translation: 根据实施例的磁阻元件包括：第一磁性层; 第二磁性层; 设置在所述第一磁性层和所述第二磁性层之间的第一非磁性层; 第一磁性层包括（Mn x Ga y）100-z Co z（45atm％＆nlE; x＆lt; 1; 75atm％，25atm％＆nlE; y＆amp; nlE; 55atm％ ，x + y = 100atm％，0atm％

公开(公告)号：US20180090671A1

公开(公告)日：2018-03-29

申请号：US15699749

申请日：2017-09-08

Applicant: Kabushiki Kaisha Toshiba ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yushi KATO ,  Tadaomi DAIBOU ,  Yuuzo KAMIGUCHI ,  Naoharu SHIMOMURA ,  Junichi ITO ,  Hiroaki SUKEGAWA ,  Mohamed BELMOUBARIK ,  Po-Han CHENG ,  Seiji MITANI ,  Tadakatsu OHKUBO ,  Kazuhiro HONO

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

公开(公告)号：US20170169872A1

公开(公告)日：2017-06-15

申请号：US15267974

申请日：2016-09-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroaki YODA ,  Naoharu SHIMOMURA ,  Yuichi OHSAWA ,  Tadaomi DAIBOU ,  Tomoaki INOKUCHI ,  Satoshi SHIROTORI ,  Altansargai BUYANDALAI ,  Yuuzo KAMIGUCHI

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: G11C11/1675 ,  G11C11/15 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.

公开(公告)号：US20150014756A1

公开(公告)日：2015-01-15

申请号：US14504140

申请日：2014-10-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi DAIBOU ,  Minoru AMANO ,  Daisuke SAIDA ,  Junichi ITO ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Hiroaki YODA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

公开(公告)号：US20130249026A1

公开(公告)日：2013-09-26

申请号：US13621998

申请日：2012-09-18

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Eiji KITAGAWA ,  Tadaomi DAIBOU ,  Yushi KATO

IPC: H01L29/82

CPC classification number: H01L27/228 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic film having a variable magnetization direction, a second magnetic film having an invariable magnetization direction, and a magnesium oxide film provided between the first magnetic film and the second magnetic film and being in contact with both the first magnetic film and the second magnetic film, and doped with at least one element selected from a first group consisting of copper, silver, and gold.

Abstract translation: 根据一个实施例，磁阻元件包括具有可变磁化方向的第一磁性膜，具有不变磁化方向的第二磁性膜，以及设置在第一磁性膜和第二磁性膜之间并与第二磁性膜接触的氧化镁膜 第一磁性膜和第二磁性膜，并且掺杂有选自铜，银和金的第一组中的至少一种元素。