公开(公告)号：US20160268338A1

公开(公告)日：2016-09-15

申请号：US15062654

申请日：2016-03-07

Applicant: Kabushiki Kaisha Toshiba

Inventor： Saori KASHIWADA ,  Yuichi Ohsawa ,  Daisuke Saida ,  Chikayoshi Kamata ,  Kazutaka Ikegami ,  Megumi Yakabe ,  Hiroaki Maekawa

IPC: H01L27/22 ,  G11C11/16 ,  H01L23/528 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetoresistive element according to an embodiment includes: a multilayer structure including a first magnetic layer, a second magnetic layer disposed above the first magnetic layer, and a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a conductor disposed above the second magnetic layer, and including a lower face, an upper face opposing to the lower face, and a side face that is different from the lower face and the upper face, an area of the lower face of the conductor being smaller than an area of the upper face of the conductor, and smaller than an area of an upper face of the second magnetic layer; and a carbon-containing layer disposed on the side face of the conductor.

Abstract translation: 根据实施例的磁阻元件包括：多层结构，包括第一磁性层，设置在第一磁性层上方的第二磁性层和设置在第一磁性层和第二磁性层之间的非磁性层; 布置在所述第二磁性层上方的导体，并且包括下表面，与所述下表面相对的上表面以及与所述下表面和所述上表面不同的侧面，所述导体的下表面的面积为 小于所述导体的上表面的面积，并且小于所述第二磁性层的上表面的面积; 以及设置在导体的侧面上的含碳层。

公开(公告)号：US20150014756A1

公开(公告)日：2015-01-15

申请号：US14504140

申请日：2014-10-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi DAIBOU ,  Minoru AMANO ,  Daisuke SAIDA ,  Junichi ITO ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Hiroaki YODA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

Abstract translation: 根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是 施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

公开(公告)号：US20160197268A1

公开(公告)日：2016-07-07

申请号：US15068062

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Megumi YAKABE ,  Yuichi OHSAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Junichi ITO ,  Eiji KITAGAWA

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including a first magnetic element; second magnetic layer; an intermediate layer between the first magnetic layer and the second magnetic layer; and a sidewall layer having a laminated structure on a side face of the first magnetic layer. The sidewall layer includes a first layer disposed on the side face of the first magnetic layer and including a first element having an atomic number larger than an atomic number of the first magnetic element, and a second layer including a second element having an atomic number smaller than the atomic number of the first atomic element. The first layer is disposed between the first magnetic layer and the second layer.

Abstract translation: 根据一个实施例，磁阻效应元件包括包括第一磁性元件的第一磁性层; 第二磁性层; 第一磁性层和第二磁性层之间的中间层; 以及在第一磁性层的侧面上具有层叠结构的侧壁层。 侧壁层包括设置在第一磁性层的侧面上的第一层，并且包括具有比第一磁性元件的原子序数大的原子序数的第一元素，以及包含原子序数较小的第二元素的第二层 比第一个原子元素的原子序数。 第一层设置在第一磁性层和第二层之间。

公开(公告)号：US20160196951A1

公开(公告)日：2016-07-07

申请号：US15067832

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yuichi OHSAWA ,  Akio UI ,  Junichi ITO ,  Chikayoshi KAMATA ,  Megumi YAKABE ,  Saori KASHIWADA

IPC: H01J37/08 ,  H01J37/30 ,  H01J37/09 ,  H01J37/20

CPC classification number: H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3053 ,  H01J2237/0822 ,  H01J2237/083 ,  H01J2237/3151 ,  H01L27/228 ,  H01L43/12

Abstract: According to one embodiment, a device manufacturing apparatus includes a substrate holding portion holding a substrate; an ion source including a housing, an anode disposed in the housing, a cathode disposed outside the housing, and a first opening disposed in a portion of the housing such that the anode is exposed to a region between the anode and the substrate holding portion, the ion source configured to generate an ion beam with which the substrate is irradiated; and at least one first structure disposed between the ion source and the substrate holding portion, and having a first through hole through which the ion beam passes. The first structure includes a conductor, and an opening dimension of the first through hole is equal to or larger than an opening dimension of the first opening.

Abstract translation: 根据一个实施例，一种装置制造装置包括：保持基板的基板保持部; 离子源，包括壳体，设置在壳体中的阳极，设置在壳体外部的阴极和设置在壳体的一部分中的第一开口，使得阳极暴露于阳极和衬底保持部分之间的区域， 所述离子源被配置为产生照射所述衬底的离子束; 以及设置在所述离子源和所述基板保持部之间的至少一个第一结构，并且具有离子束通过的第一通孔。 第一结构包括导体，第一通孔的开口尺寸等于或大于第一开口的开口尺寸。

公开(公告)号：US20160359107A1

公开(公告)日：2016-12-08

申请号：US15240033

申请日：2016-08-18

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yuichi OHSAWA ,  Junichi ITO ,  Shigeki TAKAHASHI ,  Saori KASHIWADA ,  Chikayoshi KAMATA

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01F10/3254 ,  H01F41/308 ,  H01L21/32136 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first magnetic layer, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, forming a hard mask layer on the second magnetic layer, and patterning the second magnetic layer, the tunnel barrier layer, and the first magnetic layer, with a cluster ion beam using the hard mask layer as a mask, wherein the cluster ion beam comprises cluster ions, cluster sizes of the cluster ions are distributed, and a peak value of the distribution of the cluster sizes is 2 pieces or more and 1000 pieces or less.

公开(公告)号：US20140131649A1

公开(公告)日：2014-05-15

申请号：US14023772

申请日：2013-09-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tadaomi DAIBOU ,  Eiji KITAGAWA ,  Chikayoshi KAMATA ,  Saori KASHIWADA ,  Yushi KATO ,  Megumi YAKABE

IPC: H01L43/02

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.

Abstract translation: 根据一个实施例，磁阻元件包括具有第一表面和第二表面的第一磁性层，第二磁性层，设置在第一表面和第二磁性层之间的中间层，设置在第二表面上的含有B和 选自Hf，Al，Mg和Ti并具有第三和第四表面的至少一种元素，设置在第四表面上并含有B和选自Hf，Al和Mg中的至少一种元素的第二层，以及绝缘层 设置在中间层的侧壁上，并且包含选自第二层中所含的Hf，Al和Mg中的至少一种元素。