公开(公告)号：US20230164998A1

公开(公告)日：2023-05-25

申请号：US17887766

申请日：2022-08-15

Applicant: Kioxia Corporation

Inventor： Junichi KANEYAMA ,  Keiichi SAWA ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L29/513 ,  H01L29/40117

Abstract: A semiconductor device includes a plurality of electrode layers separated from each other in a first direction, a charge storage layer provided on side surfaces of the plurality of electrode layers via a first insulating film, and a semiconductor layer provided on a side surface of the charge storage layer via a second insulating film. The charge storage layer includes a location having a fluorine concentration of 5.0 x 1018 atoms/cm3. or less. A fluorine concentration at an interface between the charge storage layer and the second insulating film is 10 times or more or 1 / 10 or less of a fluorine concentration at an interface between the charge storage layer and the first insulating film.

公开(公告)号：US20220310640A1

公开(公告)日：2022-09-29

申请号：US17460967

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Natsuki FUKUDA ,  Ryota NARASAKI ,  Takashi KURUSU ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Shinji MORI ,  Shoji HONDA ,  Takafumi OCHIAI ,  Hiroyuki YAMASHITA ,  Junichi KANEYAMA ,  Ha HOANG ,  Yuta SAITO ,  Kota TAKAHASHI ,  Tomoki ISHIMARU ,  Kenichiro TORATANI

IPC: H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

公开(公告)号：US20220302160A1

公开(公告)日：2022-09-22

申请号：US17410711

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki YAMASHITA ,  Keiichi SAWA ,  Yasushi NAKASAKI ,  Takamitsu ISHIHARA ,  Junichi KANEYAMA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate alternating with plurality of gaps or insulating layers. A charge storage film is provided on a side surface of each of the plurality of electrode films with a first insulating film placed therebetween. A semiconductor film is provided on a side surface of the charge storage film with a second insulating film placed therebetween. Furthermore, a concentration of a first element in the charge storage film adjacent to each gap or insulating film is higher than a concentration of the first element in the charge storage film adjacent to each electrode film. The first element is one of boron, niobium, or molybdenum.