公开(公告)号：US20220302160A1

公开(公告)日：2022-09-22

申请号：US17410711

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki YAMASHITA ,  Keiichi SAWA ,  Yasushi NAKASAKI ,  Takamitsu ISHIHARA ,  Junichi KANEYAMA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate alternating with plurality of gaps or insulating layers. A charge storage film is provided on a side surface of each of the plurality of electrode films with a first insulating film placed therebetween. A semiconductor film is provided on a side surface of the charge storage film with a second insulating film placed therebetween. Furthermore, a concentration of a first element in the charge storage film adjacent to each gap or insulating film is higher than a concentration of the first element in the charge storage film adjacent to each electrode film. The first element is one of boron, niobium, or molybdenum.

公开(公告)号：US20220013579A1

公开(公告)日：2022-01-13

申请号：US17482865

申请日：2021-09-23

Applicant: Kioxia Corporation

Inventor： Tadaomi DAIBOU ,  Yasushi NAKASAKI ,  Tadashi KAI ,  Hiroki KAWAI ,  Takamitsu ISHIHARA ,  Junichi ITO

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mg), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).

公开(公告)号：US20240099010A1

公开(公告)日：2024-03-21

申请号：US18459353

申请日：2023-08-31

Applicant: Kioxia Corporation

Inventor： Takamitsu ISHIHARA ,  Kazuya MATSUZAWA

IPC: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

Abstract: A semiconductor memory device includes a gate electrode and a first and second semiconductor layer surrounding the gate electrode. A first electrode layer surrounds the gate electrode and contacts the first semiconductor layer. A second electrode layer surrounds the gate electrode and contacts the first and second semiconductor layers. The first semiconductor layer is between the first and second electrode layers. A third electrode layer surrounds the gate electrode and contacts the second semiconductor layer. The second semiconductor layer is between the second and third electrode layers. A first charge storage layer is between the gate electrode and the first semiconductor layer. A second charge storage layer is between the gate electrode and the second semiconductor layer.