公开(公告)号：US20230309310A1

公开(公告)日：2023-09-28

申请号：US17930889

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Hiroyuki YAMASHITA ,  Satoshi NAGASHIMA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Shota KASHIYAMA ,  Keiichi SAWA ,  Junichi KANEYAMA

IPC: H01L27/1158 ,  G11C5/06 ,  H01L27/1157

CPC classification number: H01L27/1157 ,  G11C5/063 ,  H01L27/1158

Abstract: A semiconductor device of embodiments includes: a semiconductor layer containing silicon (Si); a first insulating layer provided in a first direction of the semiconductor layer; a second insulating layer surrounded by the semiconductor layer in a first cross section perpendicular to the first direction and containing silicon (Si) and oxygen (O); a third insulating layer surrounded by the second insulating layer in the first cross section and containing a metal element and oxygen (O); and a conductive layer surrounded by the first insulating layer in a second cross section perpendicular to the first direction, provided in the first direction of the third insulating layer, and spaced from the semiconductor layer.

公开(公告)号：US20210013225A1

公开(公告)日：2021-01-14

申请号：US16809887

申请日：2020-03-05

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Atsushi TAKAHASHI ,  Toshiaki YANASE ,  Keiichi SAWA ,  Kazuhiro MATSUO ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L29/04 ,  H01L21/02

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

公开(公告)号：US20230048781A1

公开(公告)日：2023-02-16

申请号：US17695280

申请日：2022-03-15

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Hiroyuki YAMASHITA

IPC: H01L21/02 ,  H01L21/8234 ,  H01L27/088

Abstract: A method for manufacturing a semiconductor device of an embodiment includes: forming a first film on a semiconductor layer containing silicon (Si), the first film containing a metal element and oxygen (O) and having a first thickness; and forming a second film between the semiconductor layer and the first film using radical oxidation, the second film containing silicon (Si) and oxygen (O) and having a second thickness larger than the first thickness.

公开(公告)号：US20220336493A1

公开(公告)日：2022-10-20

申请号：US17854072

申请日：2022-06-30

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Keiichi SAWA ,  Kazuhisa MATSUDA ,  Kazuhiro MATSUO ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L21/324 ,  H01L23/532 ,  H01L21/28

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

公开(公告)号：US20220189989A1

公开(公告)日：2022-06-16

申请号：US17410895

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Masaya TODA ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Yuta KAMIYA ,  Shinji MORI ,  Kenichiro TORATANI

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/28

Abstract: A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.

公开(公告)号：US20210358925A1

公开(公告)日：2021-11-18

申请号：US17194629

申请日：2021-03-08

Applicant: Kioxia Corporation

Inventor： Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Shinji MORI ,  Yuta KAMIYA ,  Kenichiro TORATANI

IPC: H01L27/1159 ,  H01L27/11587 ,  H01L27/11597

Abstract: A memory device of an embodiment includes a stacked body including a plurality of insulating layers and a plurality of gate electrode layers alternately stacked in a first direction, a semiconductor layer provided in the stacked body and extending in the first direction, and a gate insulating layer provided between the semiconductor layer and the gate electrode layer, the gate insulating layer including a first region including a first oxide containing at least one of hafnium oxide or zirconium oxide, the first region including an orthorhombic crystal, and the first region including at least one first element selected from the group consisting of carbon (C), nitrogen (N), chlorine (Cl), boron (B), hydrogen (H), fluorine (F), helium (He), and argon (Ar).