HIGH-SPEED HOTSPOT OR DEFECT IMAGING WITH A CHARGED PARTICLE BEAM SYSTEM
    11.
    发明申请
    HIGH-SPEED HOTSPOT OR DEFECT IMAGING WITH A CHARGED PARTICLE BEAM SYSTEM 有权
    高速小孔或带充电粒子束系统的缺陷成像

    公开(公告)号:US20160351373A1

    公开(公告)日:2016-12-01

    申请号:US15162249

    申请日:2016-05-23

    CPC classification number: H01J37/1472 H01J37/265 H01J37/28 H01J2237/2817

    Abstract: An inspection tool includes a controller that is configured to generate a scan pattern for an electron beam to image areas of interest on the wafer. The scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest. At least one stage speed and at least one raster pattern can be selected based on the areas of interest. The controller sends instructions to electron beam optics to direct the electron beam at the areas of interest on the surface of the wafer using the scan pattern.

    Abstract translation: 检查工具包括控制器,其被配置为产生用于电子束的扫描图案以对晶片上的感兴趣区域进行成像。 扫描图案最小化在感兴趣区域之间的电子束在晶片表面上的停留时间。 可以基于感兴趣的区域来选择至少一个舞台速度和至少一个光栅图案。 控制器向电子束光学器件发送指令,以使用扫描图案将电子束在晶片表面上的感兴趣区域引导。

    Enhanced defect detection in electron beam inspection and review
    12.
    发明授权
    Enhanced defect detection in electron beam inspection and review 有权
    电子束检测和检查中增强的缺陷检测

    公开(公告)号:US09449788B2

    公开(公告)日:2016-09-20

    申请号:US14300631

    申请日:2014-06-10

    Abstract: One embodiment relates to an electron beam apparatus for inspection and/or review. An electron source generates a primary electron beam, and an electron-optics system shapes and focuses said primary electron beam onto a sample held by a stage. A detection system detects signal-carrying electrons including secondary electrons and back-scattered electrons from said sample, and an image processing system processes data from said detection system. A host computer system that controls and coordinates operations of the electron-optics system, the detection system, and the image processing system. A graphical user interface shows a parameter space and provides for user selection and activation of operating parameters of the apparatus. Another embodiment relates to a method for detecting and/or reviewing defects using an electron beam apparatus. Other embodiments, aspects and features are also disclosed.

    Abstract translation: 一个实施例涉及用于检查和/或审查的电子束装置。 电子源产生一次电子束,并且电子 - 光学系统将所述一次电子束形成并聚焦在由载物台保持的样品上。 检测系统检测来自所述样品的包含二次电子和反向散射电子的信号携带电子,并且图像处理系统处理来自所述检测系统的数据。 控制和协调电子光学系统,检测系统和图像处理系统的主机计算机系统。 图形用户界面显示参数空间,并提供用户选择和激活设备的操作参数。 另一实施例涉及使用电子束装置检测和/或检查缺陷的方法。 还公开了其它实施例,方面和特征。

    Systems and methods for preparation of samples for sub-surface defect review
    13.
    发明授权
    Systems and methods for preparation of samples for sub-surface defect review 有权
    用于亚表面缺陷检查的样品的制备和方法

    公开(公告)号:US09318395B2

    公开(公告)日:2016-04-19

    申请号:US13687244

    申请日:2012-11-28

    Abstract: One embodiment relates to a method of preparation of a sample of a substrate for sub-surface review using a scanning electron microscope apparatus. A defect at a location indicated in a first results file is re-detected, and the location of the defect is marked with at least one discrete marking point having predetermined positioning relative to the location of the defect. The location of the defect may be determined relative to the design for the device, and a cut location and a cut angle may be determined in at least a partly-automated manner using that information. Another embodiment relates to a system for preparing a sample for sub-surface review. Another embodiment relates to a method for marking a defect for review on a target substrate. Other embodiments, aspects and feature are also disclosed.

    Abstract translation: 一个实施方案涉及使用扫描电子显微镜装置制备用于亚表面评价的基材的样品的方法。 重新检测在第一结果文件中指示的位置处的缺陷,并且使用至少一个相对于缺陷的位置具有预定定位的离散标记点标记缺陷的位置。 可以相对于设备的设计来确定缺陷的位置,并且可以使用该信息至少部分自动化地确定切割位置和切割角度。 另一实施例涉及一种用于准备用于子表面检查的样品的系统。 另一实施例涉及用于在目标衬底上标记用于复查的缺陷的方法。 还公开了其它实施例,方面和特征。

    Method and system for adaptively scanning a sample during electron beam inspection
    14.
    发明授权
    Method and system for adaptively scanning a sample during electron beam inspection 有权
    电子束检测过程中自适应扫描样品的方法和系统

    公开(公告)号:US09257260B2

    公开(公告)日:2016-02-09

    申请号:US14260053

    申请日:2014-04-23

    Abstract: A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

    Abstract translation: 用于自适应电子束扫描的系统可以包括配置成扫描横跨样品表面的电子束的检查子系统。 检查子系统可以包括电子束源,样本台,一组电子元件,检测器组件和通信地耦合到检查子系统的一个或多个部分的控制器。 控制器可以评估样品区域的一个或多个部分的一个或多个特征以进行检查,并且响应于所评估的一个或多个特性来调整检查子系统的一个或多个扫描参数。

    Method and System for Adaptively Scanning a Sample During Electron Beam Inspection
    15.
    发明申请
    Method and System for Adaptively Scanning a Sample During Electron Beam Inspection 有权
    电子束检测期间自适应扫描样品的方法和系统

    公开(公告)号:US20140319342A1

    公开(公告)日:2014-10-30

    申请号:US14260053

    申请日:2014-04-23

    Abstract: A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

    Abstract translation: 用于自适应电子束扫描的系统可以包括配置成扫描横跨样品表面的电子束的检查子系统。 检查子系统可以包括电子束源,样本台,一组电子元件,检测器组件和通信地耦合到检查子系统的一个或多个部分的控制器。 控制器可以评估样品区域的一个或多个部分的一个或多个特征以进行检查,并且响应于所评估的一个或多个特性来调整检查子系统的一个或多个扫描参数。

    Methods and apparatus for measurement of relative critical dimensions
    16.
    发明授权
    Methods and apparatus for measurement of relative critical dimensions 有权
    测量相对临界尺寸的方法和装置

    公开(公告)号:US08884223B2

    公开(公告)日:2014-11-11

    申请号:US13772929

    申请日:2013-02-21

    Inventor: Hong Xiao

    Abstract: One embodiment relates to a method of measuring a relative critical dimension (RCD) during electron beam inspection of a target substrate. A reference image is obtained. A region of interest is defined in the reference image. A target image is obtained using an electron beam imaging apparatus. The target and reference images are aligned, and the region of interest is located in the target image. Measurement is then made of the RCD within the region of interest in the target image. Another embodiment relates to a method of measuring a RCD which involves scanning along a scan length that is perpendicular to the RCD. Point RCDs along the scan length are measured. A filter is applied to the point RCDs, and an average of the point RCDs is computed. Other embodiments, aspects and features are also disclosed.

    Abstract translation: 一个实施例涉及在目标衬底的电子束检查期间测量相对临界尺寸(RCD)的方法。 获得参考图像。 感兴趣区域在参考图像中定义。 使用电子束成像装置获得目标图像。 目标和参考图像对齐,感兴趣的区域位于目标图像中。 然后在目标图像中感兴趣区域内的RCD进行测量。 另一实施例涉及一种测量RCD的方法,该方法涉及沿垂直于RCD的扫描长度进行扫描。 测量沿着扫描长度的点RCD。 将滤波器应用于点RCD,并且计算点RCD的平均值。 还公开了其它实施例,方面和特征。

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