Abstract:
An inspection tool includes a controller that is configured to generate a scan pattern for an electron beam to image areas of interest on the wafer. The scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest. At least one stage speed and at least one raster pattern can be selected based on the areas of interest. The controller sends instructions to electron beam optics to direct the electron beam at the areas of interest on the surface of the wafer using the scan pattern.
Abstract:
One embodiment relates to an electron beam apparatus for inspection and/or review. An electron source generates a primary electron beam, and an electron-optics system shapes and focuses said primary electron beam onto a sample held by a stage. A detection system detects signal-carrying electrons including secondary electrons and back-scattered electrons from said sample, and an image processing system processes data from said detection system. A host computer system that controls and coordinates operations of the electron-optics system, the detection system, and the image processing system. A graphical user interface shows a parameter space and provides for user selection and activation of operating parameters of the apparatus. Another embodiment relates to a method for detecting and/or reviewing defects using an electron beam apparatus. Other embodiments, aspects and features are also disclosed.
Abstract:
One embodiment relates to a method of preparation of a sample of a substrate for sub-surface review using a scanning electron microscope apparatus. A defect at a location indicated in a first results file is re-detected, and the location of the defect is marked with at least one discrete marking point having predetermined positioning relative to the location of the defect. The location of the defect may be determined relative to the design for the device, and a cut location and a cut angle may be determined in at least a partly-automated manner using that information. Another embodiment relates to a system for preparing a sample for sub-surface review. Another embodiment relates to a method for marking a defect for review on a target substrate. Other embodiments, aspects and feature are also disclosed.
Abstract:
A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.
Abstract:
A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.
Abstract:
One embodiment relates to a method of measuring a relative critical dimension (RCD) during electron beam inspection of a target substrate. A reference image is obtained. A region of interest is defined in the reference image. A target image is obtained using an electron beam imaging apparatus. The target and reference images are aligned, and the region of interest is located in the target image. Measurement is then made of the RCD within the region of interest in the target image. Another embodiment relates to a method of measuring a RCD which involves scanning along a scan length that is perpendicular to the RCD. Point RCDs along the scan length are measured. A filter is applied to the point RCDs, and an average of the point RCDs is computed. Other embodiments, aspects and features are also disclosed.