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    Device metrology targets and methods
    11.
    发明授权
    Device metrology targets and methods 有权

    公开(公告)号：US10571811B2

    公开(公告)日：2020-02-25

    申请号：US15159009

    申请日：2016-05-19

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

    IPC: G03F7/20 ,  H01L21/66 ,  H01L27/02 ,  H01L27/092

    Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

    Metrology targets with supplementary structures in an intermediate layer
    12.
    发明授权
    Metrology targets with supplementary structures in an intermediate layer 有权

    公开(公告)号：US10551749B2

    公开(公告)日：2020-02-04

    申请号：US15442111

    申请日：2017-02-24

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

    IPC: G03F7/20

    Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

    OPTIMIZING THE UTILIZATION OF METROLOGY TOOLS
    14.
    发明申请
    OPTIMIZING THE UTILIZATION OF METROLOGY TOOLS 审中-公开

    公开(公告)号：US20180348649A1

    公开(公告)日：2018-12-06

    申请号：US16101057

    申请日：2018-08-10

    Applicant: KLA-Tencor Corporation

    Inventor： Tsachy Holovinger ,  Liran Yerushalmi ,  David Tien ,  DongSub Choi

    IPC: G03F7/20 ,  G03F9/00 ,  H01L21/66

    Abstract: A method may include, but is not limited to, receiving a measurement including a metrology parameter for a layer of a metrology target and an alignment mark from an overlay metrology tool prior to a lithography process; deriving a merit figure from the metrology parameter and the alignment mark; deriving a correction factor from the merit figure; providing the correction factor to the lithography process via a feed forward process; receiving an additional measurement including an additional metrology parameter for the layer and an additional layer from an additional overlay metrology tool after the lithography process; deriving an adjustment from the additional metrology parameter; and providing the adjustment to the lithography process via a feedback process.

    Optimizing the utilization of metrology tools
    15.
    发明授权
    Optimizing the utilization of metrology tools 有权

    公开(公告)号：US10095121B2

    公开(公告)日：2018-10-09

    申请号：US15002129

    申请日：2016-01-20

    Applicant: KLA-Tencor Corporation

    Inventor： Tsachy Holovinger ,  Liran Yerushalmi ,  David Tien ,  DongSub Choi

    IPC: G01B11/00 ,  G03F7/20 ,  H01L21/66 ,  G03F9/00

    Abstract: Methods and corresponding metrology modules and systems, which measure metrology parameter(s) of a previous layer of a metrology target and/or an alignment mark, prior to producing a current layer of the metrology target, derive merit figure(s) from the measured metrology parameter(s) to indicate an inaccuracy, and compensate for the inaccuracy to enhance subsequent overlay measurements of the metrology target. In an example embodiment, methods and corresponding metrology modules and systems use stand-alone metrology tool(s) and track-integrated metrology tool(s) at distinct measurement patterns to address separately different aspects of variation among wafers.

    Reducing device overlay errors
    16.
    发明授权
    Reducing device overlay errors 有权

    公开(公告)号：US11971664B2

    公开(公告)日：2024-04-30

    申请号：US16077214

    申请日：2018-07-30

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Liran Yerushalmi ,  Roie Volkovich

    IPC: G03F7/00 ,  G01B11/27 ,  H01L21/68 ,  H01L23/544

    CPC classification number: G03F7/70633 ,  G01B11/272 ,  G03F7/70683 ,  G03F7/706835 ,  H01L21/681 ,  H01L23/544 ,  G01B2210/56 ,  H01L2223/5442 ,  H01L2223/54426

    Abstract: Process control methods, metrology targets and production systems are provided for reducing or eliminating process overlay errors. Metrology targets have pair(s) of periodic structures with different segmentations, e.g., no segmentation in one periodic structure and device-like segmentation in the other periodic structure of the pair. Process control methods derive metrology measurements from the periodic structures at the previous layer directly following the production thereof, and prior to production of the periodic structures at the current layer, and use the derived measurements to adjust lithography stage(s) that is part of production of the current layer. Production system integrate lithography tool(s) and metrology tool(s) into a production feedback loop that enables layer-by-layer process adjustments.

    Recipe optimization based zonal analysis
    18.
    发明授权
    Recipe optimization based zonal analysis 有权

    公开(公告)号：US10763146B2

    公开(公告)日：2020-09-01

    申请号：US15751514

    申请日：2017-12-11

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Roie Volkovich ,  Michael Adel ,  Liran Yerushalmi ,  Eitan Herzel ,  Mengmeng Ye ,  Eran Amit

    IPC: H01L21/67 ,  G01D18/00 ,  H01L21/66

    Abstract: Metrology methods and modules are provided, which comprise carrying out recipe setup procedure(s) and/or metrology measurement(s) using zonal analysis with respect to respective setup parameter(s) and/or metrology metric(s). The zonal analysis comprises relating to spatially variable values of the setup parameter(s) and/or metrology metric(s) across one or more wafers in one or more lots. Wafer zones may be discrete or spatially continuous, and be used to weight one or more parameter(s) and/or metric(s) during any of the stages of the respective setup and measurement processes.

    Lithography systems with integrated metrology tools having enhanced functionalities
    19.
    发明授权
    Lithography systems with integrated metrology tools having enhanced functionalities 有权

    公开(公告)号：US10331050B2

    公开(公告)日：2019-06-25

    申请号：US15568304

    申请日：2017-08-21

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Roie Volkovich ,  Liran Yerushalmi

    IPC: G03B27/32 ,  G03F7/20

    Abstract: Lithography systems and methods are provided with enhanced performance based on broader utilization of the integrated metrology tool in the printing tool to handle the metrology measurements in the system in a more sophisticated and optimized way. Additional operation channels are disclosed, enabling the integrated metrology tool to monitor and/or allocate metrology measurements thereby and by a standalone metrology tool with respect to specified temporal limitations of the printing tool; to adjust and optimize the metrology measurement recipes; to provide better process control to optimize process parameters of the printing tool; as well as to group process parameters of the printing tool according to a metrology measurements landscape.

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