公开(公告)号：US20140316730A1

公开(公告)日：2014-10-23

申请号：US14252323

申请日：2014-04-14

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Stilian Ivanov Pandev ,  Ady Levy ,  Daniel Kandel ,  Michael E. Adel ,  Ori Tadmor

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.

Abstract translation: 提出了直接在器件结构上执行半导体测量的方法和系统。 基于从至少一个设备结构收集的测量训练数据创建测量模型。 训练后的测量模型用于直接从其他晶圆的器件结构收集的测量数据中计算过程参数值，结构参数值或两者。 在一些示例中，收集来自多个目标的测量数据用于模型构建，训练和测量。 在一些示例中，使用与多个目标相关联的测量数据消除或显着降低测量结果中下层的影响，并且能够进行更精确的测量。 用于模型建立，训练和测量收集的测量数据可以通过多种不同测量技术的组合进行的测量得出。

公开(公告)号：US10726169B2

公开(公告)日：2020-07-28

申请号：US14919954

申请日：2015-10-22

Applicant: KLA-Tencor Corporation

Inventor： Michael E. Adel ,  Nuriel Amir ,  Mark Ghinovker ,  Tal Shusterman ,  David Gready ,  Sergey Borodyansky

IPC: G06F30/20

Abstract: Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification needs. Systems comprise the following elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production processes, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the target data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology conditions with respect to the simulated target measurements.

公开(公告)号：US10409171B2

公开(公告)日：2019-09-10

申请号：US15867485

申请日：2018-01-10

Applicant: KLA-Tencor Corporation

Inventor： Michael E. Adel ,  Amnon Manassen ,  William Pierson ,  Ady Levy ,  Pradeep Subrahmanyan ,  Liran Yerushalmi ,  DongSub Choi ,  Hoyoung Heo ,  Dror Alumot ,  John Charles Robinson

IPC: G03B27/00 ,  G03F7/20

Abstract: A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.

公开(公告)号：US20180157784A1

公开(公告)日：2018-06-07

申请号：US15502950

申请日：2016-11-04

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Eitan Hajaj ,  Tal Itzkovich ,  Sharon Aharon ,  Michael E. Adel ,  Yuri Paskover ,  Daria Negri ,  Yuval Lubashevsky ,  Amnon Manassen ,  Myungjun Lee ,  Mark D. Smith

IPC: G06F17/50 ,  G03F7/20

Abstract: Metrology targets and target design methods are provided, in which target elements are defined by replacing elements from a periodic pattern having a pitch p, by assist elements having at least one geometric difference from the replaced elements, to form a composite periodic structure that maintains the pitch p as a single pitch. Constructing targets within the bounds of compatibility with advanced multiple patterning techniques improves the fidelity of the targets and fill factor modulation enables adjustment of the targets to produce sufficient metrology sensitivity for extracting the overlay while achieving process compatibility of the targets.

公开(公告)号：US20180023950A1

公开(公告)日：2018-01-25

申请号：US15329618

申请日：2016-11-01

Applicant: KLA-Tencor Corporation

Inventor： Tal Marciano ,  Michael E. Adel ,  Mark Ghinovker ,  Barak Bringoltz ,  Dana Klein ,  Tal Itzkovich ,  Vidya Ramanathan ,  Janay Camp

IPC: G01B11/27

CPC classification number: G01B11/272 ,  G03F7/70616 ,  G03F7/70633 ,  H01L22/12 ,  H01L22/20

Abstract: Method, metrology modules and RCA tool are provided, which use the behavior of resonance region(s) in measurement landscapes to evaluate and characterize process variation with respect to symmetric and asymmetric factors, and provide root cause analysis of the process variation with respect to process steps. Simulations of modeled stacks with different layer thicknesses and process variation factors may be used to enhance the analysis and provide improved target designs, improved algorithms and correctables for metrology measurements. Specific targets that exhibit sensitive resonance regions may be utilize to enhance the evaluation of process variation.

公开(公告)号：US20170023358A1

公开(公告)日：2017-01-26

申请号：US15287388

申请日：2016-10-06

Applicant: KLA-Tencor Corporation

Inventor： Myungjun Lee ,  Mark D. Smith ,  Michael E. Adel ,  Eran Amit ,  Daniel Kandel

IPC: G01B11/27 ,  G01J9/00 ,  G03F7/20

CPC classification number: G01J9/00 ,  G03F7/705 ,  G03F7/70683 ,  H01L22/30

Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.

Abstract translation: 提供了测量方法，模块和目标，用于测量倾斜的设备设计。 该方法针对目标候选者和设备设计之间的图案布局错误（PPEs）的泽尔尼克敏感度的关系，分析和优化目标设计。 可以应用蒙特卡洛方法来增强所选择的目标候选者对透镜像差和/或装置设计中的变化的鲁棒性。 此外，还提供了考虑到明确地修改Zernike敏感度的目标参数，以提高计量测量质量并减少不准确度。

公开(公告)号：US20160290796A1

公开(公告)日：2016-10-06

申请号：US15090389

申请日：2016-04-04

Applicant: KLA-Tencor Corporation

Inventor： Ady Levy ,  Daniel Kandel ,  Michael E. Adel ,  Leonid Poslavsky ,  John Robinson ,  Tal Marciano ,  Barak Bringoltz ,  Tzahi Grunzweig ,  Dana Klein ,  Tal Itzkovich ,  Nadav Carmel ,  Nuriel Amir ,  Vidya Ramanathan ,  Janay Camp ,  Mark Wagner

IPC: G01B11/27 ,  G01N21/21

CPC classification number: G01B11/272 ,  G01N21/211 ,  G01N21/31 ,  G01N21/41 ,  G01N21/4738 ,  G01N21/4788 ,  G01N21/6489 ,  G01N21/9501 ,  G01N2021/213 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70533 ,  G03F7/70616

Abstract: A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.

Abstract translation: 计量性能分析系统包括包括一个或多个检测器的计量工具和通信地耦合到所述一个或多个检测器的控制器。 所述控制器被配置为从所述计量工具接收与度量目标相关联的一个或多个度量数据集，其中所述一个或多个测量数据集包括一个或多个测量的度量度量，并且所述一个或多个测量的度量度量指示与标称值的偏差 。 控制器还被配置为确定与标称值和一个或多个所选择的半导体工艺变化的偏差之间的关系，并且基于一个或多个测量值的值之间的关系确定偏离标称值的一个或多个根本原因 度量和一个或多个所选择的半导体工艺变化。