Use of multiple reticles in lithographic printing tools
    11.
    发明申请
    Use of multiple reticles in lithographic printing tools 有权
    在平版印刷工具中使用多个掩模版

    公开(公告)号:US20050030514A1

    公开(公告)日:2005-02-10

    申请号:US10939328

    申请日:2004-09-14

    摘要: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used. In another embodiment, the reticle stage has a range of motion permitting scanning of an additional calibration reticle. This permits rapid real time system calibration.

    摘要翻译: 具有足以扫描至少两个不同掩模版的运动范围的光罩台。 在光刻工艺中,使用具有延伸的运动范围并且包含至少两个掩模版,优选相移掩模版和修剪掩模版的掩模版平台。 标线台通过照明场扫描两个标线。 每个掩模版的图像通过投影光学器件投射到晶片台上的感光基片上。 感光基板上的场用第一掩模版的图像曝光,随后用第二掩模版的图像曝光。 在扫描操作中将第一和第二掩模版的图像投射到相同的场上极大地促进了光刻工具或装置的生产量。 当需要至少两个掩模版以暴露单个场时,掩模版改变被消除。 当使用相移掩模和相关的修剪掩模时,需要使用多个掩模版来暴露单个场。 在另一个实施例中,标线片台具有允许扫描附加校准掩模版的运动范围。 这允许快速的实时系统校准。

    Use of multiple reticles in lithographic printing tools

    公开(公告)号:US06628372B2

    公开(公告)日:2003-09-30

    申请号:US09785777

    申请日:2001-02-16

    IPC分类号: G03B2762

    摘要: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used. In another embodiment, the reticle stage has a range of motion permitting scanning of an additional calibration reticle. This permits rapid real time system calibration.

    Adjustable resolution interferometric lithography system
    13.
    发明授权
    Adjustable resolution interferometric lithography system 有权
    可调分辨率干涉光刻系统

    公开(公告)号:US07474385B2

    公开(公告)日:2009-01-06

    申请号:US11561238

    申请日:2006-11-17

    IPC分类号: G03B27/54 G03B27/52

    摘要: A lithographic system includes a source of a laser beam; a beamsplitter dividing the laser beam into a plurality of beams; and a plurality of reflecting surfaces that forms interference fringes on a substrate using the plurality of beams. Resolution of the lithographic system is adjustable by adjusting angular orientation of the reflecting surfaces. The beamsplitter is movable along the optical path to adjust the resolution. The reflecting surfaces may be facets of a prism. Each reflecting surface corresponds to a particular beamsplitter position along the optical path, and/or to a particular resolution. The beamsplitter includes a linear grating or a checkerboard grating. The beams are N-way symmetric. A numerical aperture of the system is adjustable by moving the beamsplitter along the optical path. A liquid can be between the substrate and the prism.

    摘要翻译: 光刻系统包括激光束源; 分束器将激光束分成多个光束; 以及多个反射表面,其使用所述多个光束在基板上形成干涉条纹。 光刻系统的分辨率可通过调整反射表面的角度方向来调节。 分束器可沿着光路移动以调节分辨率。 反射面可以是棱镜的面。 每个反射表面对应于沿着光路的特定分束器位置和/或特定分辨率。 分束器包括线性光栅或棋盘格栅。 梁是N路对称的。 通过沿着光路移动分束器来调节系统的数值孔径。 液体可以在基板和棱镜之间。

    Liquid immersion lithography system with tilted liquid flow
    14.
    发明申请
    Liquid immersion lithography system with tilted liquid flow 有权
    液浸光刻系统具有倾斜的液体流动

    公开(公告)号:US20070041002A1

    公开(公告)日:2007-02-22

    申请号:US11586639

    申请日:2006-10-26

    IPC分类号: G03B27/42

    CPC分类号: G03F7/70341

    摘要: A liquid immersion lithography system including a projection optical system for directing electromagnetic radiation onto a substrate, and a showerhead for delivering liquid flow between the projection optical system and the substrate. The showerhead includes an injection nozzle and a retrieval nozzle located at different heights. The liquid flow is tilted relative to the substrate. A direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.

    摘要翻译: 一种液浸光刻系统,包括用于将电磁辐射引导到基板上的投影光学系统,以及用于在投影光学系统和基板之间输送液体流的喷头。 喷头包括位于不同高度的注射喷嘴和拾取喷嘴。 液体流动相对于基底倾斜。 从注射喷嘴到回收喷嘴的方向相对于基板倾斜约1至2度。

    Tunable alignment geometry
    15.
    发明申请
    Tunable alignment geometry 失效
    可调整对齐几何

    公开(公告)号:US20070004053A1

    公开(公告)日:2007-01-04

    申请号:US11516748

    申请日:2006-09-07

    申请人: Louis Markoya

    发明人: Louis Markoya

    IPC分类号: H01L21/00

    摘要: An alignment targets with geometry designs provides a desired alignment offset for processes (both symmetric and asymmetric) on a wafer substrate. The alignment target includes one or more sub-targets, where each sub-target is defined as having a left portion and a right portion having a different geometric pattern, and where the left portion has a geometry density and the right portion has a geometry density.

    摘要翻译: 具有几何设计的对准目标为晶片衬底上的工艺(对称和不对称)提供期望的对准偏移。 对准目标包括一个或多个子目标,其中每个子目标定义为具有不同几何图案的左部分和右部分,并且其中左部分具有几何密度,右部分具有几何密度 。

    Interferometric lithographic projection apparatus
    16.
    发明申请
    Interferometric lithographic projection apparatus 有权
    干涉光刻投影仪

    公开(公告)号:US20060170896A1

    公开(公告)日:2006-08-03

    申请号:US11341381

    申请日:2006-01-30

    IPC分类号: G03B27/54

    CPC分类号: G03F7/70408

    摘要: A lithographic projection apparatus includes an illumination system, an interchangeable upper optics module, and a lower optics module. The illumination system provides a beam of radiation. The interchangeable upper optics module receives the beam and includes, sequentially, a beam splitter that splits the beam into portions, an aperture plate, and a plurality of reflecting surfaces. The lower optics module receives portions of the beam from respective ones the reflecting surfaces and directs the portions of the beam onto a substrate. Interference fringes or contact hole patterns are formed on the substrate using the portions of the beam.

    摘要翻译: 光刻投影设备包括照明系统,可互换的上部光学模块和下部光学模块。 照明系统提供辐射束。 可互换的上光学模块接收光束,并且依次包括将光束分成多个部分的光束分离器,孔板和多个反射表面。 下部光学模块从相应的反射表面接收光束的部分并将光束的部分引导到衬底上。 使用梁的部分在基板上形成干涉条纹或接触孔图案。

    Line width insensitive wafer target detection in two directions
    17.
    发明授权
    Line width insensitive wafer target detection in two directions 有权
    线宽不敏感的晶圆靶检测在两个方向

    公开(公告)号:US5966215A

    公开(公告)日:1999-10-12

    申请号:US290217

    申请日:1999-04-13

    摘要: An alignment system for use in semiconductor manufacturing that matches pairs of like edges of alignment marks. Grating type alignment marks are illuminated by a predetermined illumination pattern with the reflected and/or scattered electromagnetic radiation collected by a detector. Like edges are selected from the collected electromagnetic radiation and matched. A signal analyzer analyses the matched like edges and obtains alignment information. The matching of like edges results in relatively process insensitive detection of wafer alignment marks. The distance between like edges is substantially less effected by wafer processing. Wafer alignment marks can thereby be more accurately detected, resulting in improved positioning and alignment accuracies. This improves and advances the technology use to manufacture semiconductor devices.

    摘要翻译: 用于半导体制造的对准系统,其匹配对准标记的相似边对。 光栅型对准标记由预定的照明图案照射,由检测器收集的反射和/或散射的电磁辐射。 相似的边缘从收集的电磁辐射中选出并匹配。 信号分析仪分析匹配的相似边缘并获得对齐信息。 相似边缘的匹配导致晶片对准标记的相对过程不敏感检测。 相似边缘之间的距离基本上不受晶片处理的影响。 因此可以更精确地检测晶片对准标记,从而提高定位和对准精度。 这改善并促进了制造半导体器件的技术应用。

    Liquid immersion lithography system with tilted liquid flow
    18.
    发明申请
    Liquid immersion lithography system with tilted liquid flow 审中-公开
    液浸光刻系统具有倾斜的液体流动

    公开(公告)号:US20060232753A1

    公开(公告)日:2006-10-19

    申请号:US11108673

    申请日:2005-04-19

    IPC分类号: G03B27/52

    CPC分类号: G03F7/70341

    摘要: A liquid immersion lithography system including a projection optical system for directing electromagnetic radiation onto a substrate, and a showerhead for delivering liquid flow between the projection optical system and the substrate. The showerhead includes an injection nozzle and a retrieval nozzle located at different heights. The liquid flow is tilted relative to the substrate. A direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.

    摘要翻译: 一种液浸光刻系统,包括用于将电磁辐射引导到基板上的投影光学系统,以及用于在投影光学系统和基板之间输送液体流的喷头。 喷头包括位于不同高度的注射喷嘴和拾取喷嘴。 液体流动相对于基底倾斜。 从注射喷嘴到回收喷嘴的方向相对于基板倾斜约1至2度。

    Adjustable resolution interferometric lithography system

    公开(公告)号:US20060044539A1

    公开(公告)日:2006-03-02

    申请号:US10927309

    申请日:2004-08-27

    IPC分类号: G03B27/54

    摘要: A lithographic system includes a laser outputting a laser beam; a beamsplitter dividing the laser beam into a plurality of beams; and a prism for forming interference fringes on a substrate using the plurality of beams. Resolution of the lithographic system is adjustable without replacing any optical components in an optical path of the lithographic system. The beamsplitter is movable along the optical path to adjust the resolution. The prism includes a plurality of sets of facets, each set of facets corresponding to a particular resolution. Each set of facets corresponds to a particular beamsplitter position along the optical path, and/or to a particular resolution. The beamsplitter includes a linear grating or a checkerboard grating. The beams are N-way symmetric. The resolution is adjustable. A numerical aperture of the system is adjustable by moving the beamsplitter along the optical path. A liquid can be between the substrate and the prism.

    Line width insensitive wafer target detection
    20.
    发明授权
    Line width insensitive wafer target detection 失效
    线宽不敏感晶圆靶检测

    公开(公告)号:US5920396A

    公开(公告)日:1999-07-06

    申请号:US730787

    申请日:1996-10-16

    摘要: An alignment system for use in semiconductor manufacturing that matches pairs of like edges of alignment marks. Grating type alignment marks are illuminated by a predetermined illumination pattern with the reflected and/or scattered electromagnetic radiation collected by a detector. Like edges are selected from the collected electromagnetic radiation and matched. A signal analyzer analyses the matched like edges and obtains alignment information. The matching of like edges results in relatively process insensitive detection of wafer alignment marks. The distance between like edges is substantially less effected by wafer processing. Wafer alignment marks can thereby be more accurately detected, resulting in improved positioning and alignment accuracies. This improves and advances the technology use to manufacture semiconductor devices.

    摘要翻译: 用于半导体制造的对准系统,其匹配对准标记的相似边对。 光栅型对准标记由预定的照明图案照射,由检测器收集的反射和/或散射的电磁辐射。 相似的边缘从收集的电磁辐射中选出并匹配。 信号分析仪分析匹配的相似边缘并获得对齐信息。 相似边缘的匹配导致晶片对准标记的相对过程不敏感检测。 相似边缘之间的距离基本上不受晶片处理的影响。 因此可以更精确地检测晶片对准标记,从而提高定位和对准精度。 这改善并促进了制造半导体器件的技术应用。