Thin film transistor circuit, light emitting display apparatus, and driving method thereof
    11.
    发明授权
    Thin film transistor circuit, light emitting display apparatus, and driving method thereof 失效
    薄膜晶体管电路,发光显示装置及其驱动方法

    公开(公告)号:US08654114B2

    公开(公告)日:2014-02-18

    申请号:US12667827

    申请日:2008-07-29

    IPC分类号: G09G5/00

    摘要: In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.

    摘要翻译: 为了抑制电应力对使用TFT的TFT特性的影响,根据本发明的发光显示装置包括有机EL器件和用于驱动有机EL器件的驱动电路。 驱动电路包括多个像素,每个像素具有薄膜晶体管,其阈值电压由于在栅极端子和源极端子之间施加的电应力而可逆地改变;以及电压施加单元,其将薄膜晶体管的栅极电位设置为高于 源潜力。 电压施加单元在薄膜晶体管未被驱动时在栅极端子和源极端子之间施加电应力,以便在阈值电压饱和到电应力的区域中驱动薄膜晶体管。

    Driving circuit of display element and image display apparatus
    12.
    发明授权
    Driving circuit of display element and image display apparatus 有权
    显示元件和图像显示装置的驱动电路

    公开(公告)号:US08599111B2

    公开(公告)日:2013-12-03

    申请号:US12162929

    申请日:2007-03-08

    IPC分类号: G09G3/30 G09G5/10

    摘要: A driving circuit of a display element includes a current source circuit having a first transistor and a holding circuit for holding a gate voltage of the first transistor during a first period at an electric potential corresponding to a constant current to be supplied to the display element, and a control circuit including a second transistor connected in series to the current source circuit and connected in parallel to the display element and the capacitor element whose one terminal is connected to a gate of the second transistor and the other terminal is connected to a line, and controlling the light emission time of the display element by controlling the second transistor during a third period. A constant voltage is applied from the line during the first period. The gray-scale voltage is applied from the line during a second period, and the gate of the second transistor and the one terminal are short-circuited. In addition, an electric charge based on the difference between the gray-scale voltage and the gate voltage of the second transistor is accumulated in the capacitor element, and a sweep voltage is applied during the third period, so that the ON time of the second transistor is controlled.

    摘要翻译: 显示元件的驱动电路包括具有第一晶体管和保持电路的电流源电路,所述保持电路用于在第一周期期间保持与要提供给显示元件的恒定电流相对应的电位的第一晶体管的栅极电压, 以及控制电路,包括与所述电流源电路串联连接并并联连接到所述显示元件的第二晶体管和所述电容器元件,所述电容器元件的一个端子连接到所述第二晶体管的栅极,并且所述另一端子连接到线路, 以及通过在第三周期期间控制所述第二晶体管来控制所述显示元件的发光时间。 在第一周期期间从线路施加恒定电压。 在第二周期期间,从线路施加灰度电压,并且第二晶体管的栅极和一个端子短路。 此外,基于第二晶体管的灰度电压和栅极电压之间的差异的电荷累积在电容器元件中,并且在第三周期期间施加扫描电压,使得第二时间的导通时间 晶体管被控制。

    Electronic device having an isolating element and display apparatus including the electronic device
    13.
    发明授权
    Electronic device having an isolating element and display apparatus including the electronic device 有权
    具有隔离元件的电子设备和包括该电子设备的显示设备

    公开(公告)号:US08525175B2

    公开(公告)日:2013-09-03

    申请号:US13161328

    申请日:2011-06-15

    IPC分类号: H01L29/04

    CPC分类号: H01L27/1225 H01L27/124

    摘要: An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another.

    摘要翻译: 电子设备包括:多个电子元件,每个电子元件包括半导体膜; 以及设置在所述多个电子元件的相邻元件之间的元件隔离区域,所述元件隔离区域包括具有1.95eV以上的带隙的半导体膜,绝缘膜和元件隔离电极,所述元件隔离电极为电极, 通过绝缘膜与元件隔离区域的半导体膜分离,并施加电压以增加元件隔离区域的半导体膜的电阻,从而使多个电子元件彼此电隔离。

    DRIVING CIRCUIT AND VOLTAGE GENERATING CIRCUIT AND DISPLAY UNIT USING THE SAME
    15.
    发明申请
    DRIVING CIRCUIT AND VOLTAGE GENERATING CIRCUIT AND DISPLAY UNIT USING THE SAME 有权
    驱动电路和电压发生电路及显示单元

    公开(公告)号:US20120212471A1

    公开(公告)日:2012-08-23

    申请号:US13396180

    申请日:2012-02-14

    申请人: Katsumi Abe

    发明人: Katsumi Abe

    IPC分类号: G09G5/00

    摘要: To provide a liquid crystal display capable of implementing a symmetrical frame and a narrower frame without lowering drive capability of a common drive circuit.[Solution]A liquid crystal display substrate 10 has a data driver circuit 2 and a gate driver circuit 3 for driving the liquid crystal display integrated thereon together with a common drive circuit 4, where common voltages VCOMH and VCOML are applied from the outside through a pad. The gate driver circuit 3 is placed to be adjacent to one of the four terminals of the liquid crystal display. The common drive circuit 4 is placed to be adjacent to the terminal opposite to where the gate driver circuit 3 is placed and as close to the pad as possible while having almost the same width as the area of the gate driver circuit 3. The pad close to where the common drive circuit 4 is placed is used as the pad for applying the common voltages VCOMH and VCOML.

    摘要翻译: 提供能够实现对称框架和较窄框架而不降低公共驱动电路的驱动能力的液晶显示器。 [解决方案]液晶显示基板10具有数据驱动电路2和用于驱动集成在其上的液晶显示器的栅极驱动电路3以及公共驱动电路4,其中公共电压VCOMH和VCOML从外部通过一个 垫。 栅极驱动器电路3被放置成与液晶显示器的四个端子中的一个相邻。 公共驱动电路4被放置成与栅极驱动器电路3相对的端子相邻,并且尽可能靠近焊盘,同时具有与栅极驱动器电路3的面积几乎相同的宽度。焊盘闭合 使用公共驱动电路4的位置作为用于施加公共电压VCOMH和VCOML的焊盘。

    Method of treating semiconductor element
    16.
    发明授权
    Method of treating semiconductor element 有权
    半导体元件的处理方法

    公开(公告)号:US08084331B2

    公开(公告)日:2011-12-27

    申请号:US12865032

    申请日:2009-03-02

    IPC分类号: H01L21/331

    摘要: In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

    摘要翻译: 在处理至少包括半导体的半导体元件的方法中,通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In,Ga,Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O(IGZO),非晶In-Zn-O(IZO)和无定形Zn-Sn-O(ZTO)组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移,该偏移与由制造工艺历史,时间依赖变化,电应力或热应力引起的阈值电压偏移相反。

    Process for producing hydrazone compound
    19.
    发明授权
    Process for producing hydrazone compound 失效
    生产腙化合物的方法

    公开(公告)号:US07884245B2

    公开(公告)日:2011-02-08

    申请号:US11571399

    申请日:2005-06-28

    IPC分类号: C07C241/00 C07C243/00

    摘要: The present invention provides a process for producing a hydrazone compound represented by the general formula (5): which comprises a step of condensing a hydrazine compound represented by the general formula (3): with a carbonyl compound represented by the general formula (4): without taking the hydrazine compound out of a reactor. According to the invention, the target hydrazone compound can be obtained in high quality and in a high yield without taking the hydrazine compound out of the reactor at all, the hydrazine compound being a reaction intermediate which is structurally unstable and has a fear of influencing safety of workers owing to its toxicity (mutagenicity).

    摘要翻译: 本发明提供由通式(5)表示的腙化合物的制造方法:其包括将通式(3)表示的肼化合物与通式(4)表示的羰基化合物缩合的工序, :不将肼化合物从反应器中取出。 根据本发明,可以高质量,高收率地获得目标腙化合物,而不将肼化合物从反应器中完全除去,肼化合物是结构不稳定并且有害于影响安全性的反应中间体 的工人因其毒性(致突变性)而异。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    20.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号:US20100296342A1

    公开(公告)日:2010-11-25

    申请号:US12782159

    申请日:2010-05-18

    IPC分类号: G11C16/04

    摘要: When bit lines or sense amplifiers are checked whether they are defective during a test performed to check whether the bit lines are defectively open, an electrical current supplied from one sense amplifier is detected by another sense amplifier. Thus, if plural bit lines are defectively open, they can be detected simultaneously. Consequently, the test time can be shortened greatly.

    摘要翻译: 当检查位线或读出放大器在执行测试期间是否有缺陷以检查位线是否有缺陷时,由另一个读出放大器检测从一个读出放大器提供的电流。 因此,如果多个位线有缺陷,则可以同时检测。 因此,可以大大缩短测试时间。