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    HYDRAULIC DRIVE SYSTEM
    15.
    发明申请
    HYDRAULIC DRIVE SYSTEM 有权
    液压驱动系统

    公开(公告)号：US20140123639A1

    公开(公告)日：2014-05-08

    申请号：US14129414

    申请日：2012-08-13

    申请人： Teruo Akiyama ,  Noboru Iida ,  Kenji Oshima ,  Koji Saito

    发明人： Teruo Akiyama ,  Noboru Iida ,  Kenji Oshima ,  Koji Saito

    IPC分类号： F15B15/02

    CPC分类号： F15B15/02 ,  E02F9/2235 ,  E02F9/2289 ,  E02F9/2292 ,  E02F9/2296 ,  F15B21/087 ,  F15B2211/20546 ,  F15B2211/20561 ,  F15B2211/20576 ,  F15B2211/27 ,  F15B2211/613 ,  F15B2211/633 ,  F15B2211/6336 ,  F15B2211/6346 ,  F15B2211/7053 ,  F15B2211/785

    摘要： A hydraulic driving system includes a hydraulic cylinder with a cylinder tube and a cylinder rod, a main pump, a hydraulic-fluid path, a charge pump, a stroke position detecting unit, and a pump control unit. The hydraulic-fluid path forms a closed circuit between a main pump and the hydraulic cylinder. The cylinder rod expands or contracts depending on how hydraulic fluid is supplied and exhausted to and from first and second chambers. The charge pump replenishes hydraulic-fluid in the hydraulic-fluid path. The pump control unit performs flow-rate reduction control in which the pump control unit reduces a suction flow rate so that a suction flow rate of the main pump is equal to or less than a maximum discharge flow rate of the charge pump when the stroke position becomes closer to a stroke end of the cylinder rod than a prescribed reference position during the flow rate reduction control.

    摘要翻译： 液压驱动系统包括具有气缸管和气缸杆的液压缸，主泵，液压流路，充电泵，行程位置检测单元和泵控制单元。 液压路径在主泵和液压缸之间形成闭合回路。 气缸杆根据液压油如何供给和排出到第一和第二室进行膨胀或收缩。 电荷泵补充液压流体路径中的液压流体。 泵控制单元执行流量降低控制，其中，泵控制单元降低吸入流量，使得当泵的行程位置（3）时主泵的吸入流量等于或小于电动泵的最大排出流量 在流量降低控制期间比在规定的基准位置更靠近气缸杆的行程端。

    SCROLL COMPRESSOR
    16.
    发明申请
    SCROLL COMPRESSOR 有权
    滚动压缩机

    公开(公告)号：US20130108496A1

    公开(公告)日：2013-05-02

    申请号：US13808193

    申请日：2011-07-07

    申请人： Hiroaki Nakai ,  Hirofumi Yoshida ,  Tsuyoshi Karino ,  Ryuichi Ohno ,  Shingo Oyagi ,  Noboru Iida

    发明人： Hiroaki Nakai ,  Hirofumi Yoshida ,  Tsuyoshi Karino ,  Ryuichi Ohno ,  Shingo Oyagi ,  Noboru Iida

    IPC分类号： F04C28/26 ,  F04C18/02

    CPC分类号： F04C28/26 ,  F04C18/0215 ,  F04C18/0261 ,  F04C23/008 ,  F04C29/128 ,  F04C2210/26 ,  F04C2210/263

    摘要： A scroll compressor employs therein a refrigerant having a small global warming potential and a small ozone depletion potential and mainly comprising hydrofluoroolefin having a carbon-carbon double bond. A stationary scroll has and end plate and a discharge port defined in the end plate at a central portion thereof so as to open into a discharge chamber. The stationary scroll also has a bypass hole defined in the end plate to allow a plurality of compression chambers to communicate with the discharge chamber before the compression chambers communicate with the discharge port. A check valve is provided on the bypass hole to allow the refrigerant to flow from the compression chambers to the discharge chamber. This construction can restrain a baneful influence on the global environment, reduce a temperature increase caused by excessive compression, and restrain decomposition of the refrigerant even in long-term use.

    摘要翻译： 涡旋压缩机在其中使用具有小的全球变暖潜能和小的臭氧消耗潜力的制冷剂，并且主要包括具有碳 - 碳双键的氢氟烯烃。 固定涡卷具有端板和排出口，其在端板的中央部分限定，以便打开到排出室。 固定涡卷还具有限定在端板中的旁通孔，以允许多个压缩室在压缩室与排出口连通之前与排出室连通。 在旁通孔上设置止回阀，以使制冷剂从压缩室流到排放室。 这种结构可以抑制对全球环境的严重影响，减少过度压缩引起的温度升高，并且即使长期使用也能抑制制冷剂的分解。

    Scroll compressor with certain pressure ratio between discharge pressure and suction pressure and with certain ratio of diameter of orbiting mirror plate and outer diameter of the annular seal
    18.
    发明授权
    Scroll compressor with certain pressure ratio between discharge pressure and suction pressure and with certain ratio of diameter of orbiting mirror plate and outer diameter of the annular seal 有权
    涡旋压缩机具有排气压力和吸入压力之间的一定压力比，以及旋转镜板的直径和环形密封件的外径的一定比例

    公开(公告)号：US07614859B2

    公开(公告)日：2009-11-10

    申请号：US10560037

    申请日：2004-06-09

    申请人： Kiyoshi Sawai ,  Noboru Iida ,  Yoshiyuki Futagami ,  Akira Hiwata ,  Teruyuki Akazawa

    发明人： Kiyoshi Sawai ,  Noboru Iida ,  Yoshiyuki Futagami ,  Akira Hiwata ,  Teruyuki Akazawa

    IPC分类号： F01C1/02 ,  F03C2/00 ,  F04C18/00

    CPC分类号： F04C23/008 ,  F04C18/0215 ,  F04C27/005 ,  F04C29/023

    摘要： A back pressure chamber (12) provided on a back surface of an orbiting scroll (5) is divided into an inner region (12a) and an outer region (12b) by an annular seal (11). A diameter d of the annular seal (11) is set 0.5 times or more of a diameter D of an orbiting mirror plate (5a). With this, plus thrust force can be applied to the orbiting scroll (5) irrespective of magnitude of a discharge pressure Pd applied to the inner region (12a). Therefore, it is possible to push the orbiting scroll (5) against the fixed scroll (4) only by back pressure of discharge pressure. A set pressure Pm of the outer region (12b) is reduced to a value close to a suction pressure Ps, a pressure adjusting mechanism (20) is swiftly opened after a scroll compressor is started. With this, lubricant oil is supplied from the outer region (12b) to the suction space (9) without a time lag.

    摘要翻译： 设置在绕动涡旋件（5）的后表面上的背压室（12）通过环形密封件（11）分成内部区域（12a）和外部区域（12b）。 环形密封件（11）的直径d设定为旋转镜板（5a）的直径D的0.5倍以上。 由此，无论施加到内部区域（12a）的排出压力Pd的大小如何，都可以向绕动涡盘（5）施加加力推力。 因此，只有通过排出压力的反压力才能将动涡旋盘（5）推靠在固定涡旋盘（4）上。 外部区域（12b）的设定压力Pm减小到接近吸入压力Ps的值，在涡旋式压缩机启动后迅速地打开压力调节机构20。 由此，润滑油从外部区域（12b）供给到吸入空间（9）而没有时间滞后。

    SUSCEPTOR AND APPARATUS FOR MANUFACTURING EPITAXIAL WAFER
    19.
    发明申请
    SUSCEPTOR AND APPARATUS FOR MANUFACTURING EPITAXIAL WAFER 审中-公开
    用于制造外延波形的SUSICEPTOR和装置

    公开(公告)号：US20090031954A1

    公开(公告)日：2009-02-05

    申请号：US12278650

    申请日：2007-02-08

    申请人： Kouichi Nishikido ,  Motonori Nakamura ,  Atsuhiko Hirosawa ,  Noboru Iida ,  Norihiko Sato ,  Atsushi Nagato ,  Toshiyuki Kamei

    发明人： Kouichi Nishikido ,  Motonori Nakamura ,  Atsuhiko Hirosawa ,  Noboru Iida ,  Norihiko Sato ,  Atsushi Nagato ,  Toshiyuki Kamei

    IPC分类号： C23C16/00

    CPC分类号： H01L21/67115 ,  C23C16/4581 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/68735

    摘要： A susceptor capable of reducing unevenness in a film-thickness of an epitaxial film on an outer surface of a substrate wafer and a manufacturing apparatus of an epitaxial wafer are provided. The susceptor includes a wafer placement and a peripheral portion. The wafer placement is greater in size than the substrate wafer W and substantially disc-shaped. The peripheral portion is substantially in a ring-plate shape and includes: an inner circumference standing in a fashion surrounding a peripheral portion of the wafer placement; and an upper surface outwardly extending from an upper end of the inner circumference in parallel to the placement surface of the wafer placement. In the chemical vapor deposition control unit, an inner circumference has a curvature substantially similar to a curvature of the inner circumference of the peripheral portion, and the upper surface is leveled with the upper surface) of the peripheral portion. The chemical vapor deposition control unit is made of SiO2 which is less reactive with a reaction gas than a SiC film.

    摘要翻译： 提供一种能够减小衬底晶片的外表面上的外延膜的膜厚度和外延晶片的制造装置的基座。 感受体包括晶片放置和周边部分。 晶片放置的尺寸大于衬底晶片W并且基本上是圆盘形。 周边部分基本上是环形的，并且包括：以围绕晶片放置的周边部分的方式站立的内圆周; 以及从内圆周的上端平行于晶片放置的放置表面向外延伸的上表面。 在化学气相沉积控制单元中，内圆周具有与周边部分的内周的曲率大致相似的曲率，并且上表面与上表面平齐）。 化学气相沉积控制单元由与SiC膜反应气反应性较低的SiO 2制成。

    Apparatus and method for depositing layer on substrate
    20.
    发明申请
    Apparatus and method for depositing layer on substrate 审中-公开
    用于在衬底上沉积层的装置和方法

    公开(公告)号：US20070281084A1

    公开(公告)日：2007-12-06

    申请号：US11806091

    申请日：2007-05-30

    申请人： Atsuhiko Hirosawa ,  Noboru Iida ,  Norihiko Sato ,  Atsushi Nagato ,  Toshiyuki Kamei ,  Kouichi Nishikido ,  Motonori Nakamura

    发明人： Atsuhiko Hirosawa ,  Noboru Iida ,  Norihiko Sato ,  Atsushi Nagato ,  Toshiyuki Kamei ,  Kouichi Nishikido ,  Motonori Nakamura

    IPC分类号： C23C16/00 ,  B05C11/00

    CPC分类号： C23C16/45565 ,  C23C16/52

    摘要： A reactant gas is supplied to a gas inlet port 40B of a reaction chamber 20A from a plurality of gas flow paths 36A. The number of gas flow paths 36A is five or more within a range of one side of the gas inlet port 40B divided in two at the center thereof. The pitch between adjacent gas flow paths 36A is 10 mm or more. A baffle 38 having a plurality of slit holes 38A is disposed upstream of the gas flow paths 36A. The gas flow rates of the respective gas flow paths 36A are adjusted by recurrent calculation using layer growth sensitivity data that defines the relation between the gas flow rates of the respective gas flow paths 36A.

    摘要翻译： 反应气体从多个气体流路36A供给到反应室20A的气体导入口40B。气体流路36A的数量在气体入口的一侧的范围内为5以上 端口40B在其中心分为两个。 相邻气体流路36A之间的间距为10mm以上。 具有多个狭缝孔38A的挡板38设置在气体流路36A的上游。各气体流路36A的气体流量通过使用层生长敏感性数据的复数计算进行调整，该层生长敏感性数据定义了 各气体流路36A的气体流量。