公开(公告)号：US07833429B2

公开(公告)日：2010-11-16

申请号：US11778780

申请日：2007-07-17

申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： B44C1/22

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A RF bias voltage is adjusted based on the result of comparison by the comparison circuit.

摘要翻译： 一种等离子体处理装置的等离子体处理方法，包括气体环，钟罩，天线，样品台，法拉第屏蔽和用于向天线和法拉第屏蔽提供电源电压的RF电源电路 。 RF电源电路包括RF电源，与RF电源连接的天线，与天线串联连接并提供谐振电压的谐振电路，用于检测谐振电路的谐振电压的检测电路，以及 比较器电路，用于将由检测电路检测的谐振电压与预定设定值进行比较。 基于比较电路的比较结果来调整RF偏置电压。

公开(公告)号：US20100018649A1

公开(公告)日：2010-01-28

申请号：US12575514

申请日：2009-10-08

申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： H01L21/3065

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.

摘要翻译： 等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线 被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。 由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。 环形构件向上延伸以覆盖钟罩的内表面的一部分。

公开(公告)号：US06895179B2

公开(公告)日：2005-05-17

申请号：US10658280

申请日：2003-09-10

申请人： Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

发明人： Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

IPC分类号： H01L21/00 ,  H01L21/683 ,  F26B19/00

CPC分类号： H01L21/67109 ,  H01L21/6831

摘要： A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.

摘要翻译： 一种用于晶片处理装置的晶片台，其具有附接到液体冷却套上的具有内置冷却剂液体循环路径的液体冷却套和陶瓷板，并且其中具有用于静电卡盘的加热器和电极。 晶片台可以在将晶片安装在陶瓷板上的同时实现晶片处理的性能。 液体冷却套管能够通过用于在液体冷却套上形成的冷却剂气体的循环的间隙来安装陶瓷板，以及耐热密封材料，其中容纳有用于将液体冷却套和第二组件之间的冷却剂气体密封的弹性体 陶瓷板。

公开(公告)号：US08795467B2

公开(公告)日：2014-08-05

申请号：US12575514

申请日：2009-10-08

申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.

摘要翻译： 等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线 被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。 由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。 环形构件向上延伸以覆盖钟罩的内表面的一部分。

公开(公告)号：US08062473B2

公开(公告)日：2011-11-22

申请号：US12324125

申请日：2008-11-26

申请人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

发明人： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

摘要： A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween.

摘要翻译： 等离子体处理装置包括处理室，样品台，钟罩，线圈天线，法拉第屏蔽和位于钟罩的裙部下方并位于样品台上方的气环构件。 气环构件从设置在气环构件的内表面上的气体端口向钟罩内的等离子体产生空间提供处理气体。 环形板设置在法拉第罩的周边附近，并且具有面向气体环构件的内表面的内表面并且与气环构件的内表面间隔开，以限定其间的间隙。

公开(公告)号：US20050089625A1

公开(公告)日：2005-04-28

申请号：US10997888

申请日：2004-11-29

申请人： Seiichiro Kanno ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Hideki Kihara ,  Hideyuki Yamamoto

发明人： Seiichiro Kanno ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Hideki Kihara ,  Hideyuki Yamamoto

IPC分类号： H01L21/00 ,  B05D1/00 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/67253 ,  H01J37/32082 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67248

摘要： A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.

摘要翻译： 一种用于操作半导体处理装置的方法，其使用其中产生的等离子体等离子体处理安装在放置在容器中的台上的半导体晶片。 该方法包括设置半导体晶片的温度，并且基于关于设置的半导体晶片的温度的信息来控制半导体处理装置的操作。

公开(公告)号：US20070184563A1

公开(公告)日：2007-08-09

申请号：US11735657

申请日：2007-04-16

申请人： Go Miya ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

发明人： Go Miya ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/306

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069

摘要： A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.

摘要翻译： 一种用于等离子体蚀刻装置的等离子体蚀刻方法，包括：处理室，用于对被处理物体进行等离子体蚀刻; 第一气体供应源; 第二气体供应源; 用于将处理气体引入处理室的第一气体入口; 用于将处理气体引入所述处理室的第二气体入口; 用于调节处理气体的流量的流量调节器; 以及用于将所述第一处理气体分成多个部分的气体分流器，其中所述第二处理气体与所述气体分流器和所述第一气体入口之间以及所述气体分流器和所述第二气体入口之间的至少一部分合并。

公开(公告)号：US06245202B1

公开(公告)日：2001-06-12

申请号：US09155906

申请日：1998-10-08

申请人： Manabu Edamura ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburo Kanai

发明人： Manabu Edamura ,  Ryoji Nishio ,  Ken Yoshioka ,  Saburo Kanai

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01L21/3065 ,  H05H1/46

摘要： In a high-frequency inductive plasma etching apparatus, a space between an antenna to which a high-frequency power is fed and a processing chamber is insulated with an insulating material having a suitable thickness, while the antenna is protected from a plasma or a reactive gas for plasma processing and the surface of a side in contact with the plasma is covered by an insulating material such as alumina and quartz. The insulating material and the antenna are placed in a vacuum. Since the processing chamber which contains the insulating material and the antenna can take a pressure differential with atmospheric pressure, all that is required of the insulating material is its capacity to take the plasma atmosphere. Consequently, the insulating material can be made thin and the plasma is generated uniformly in high density. Heat generated at the antenna is dissipated to the outside either by making a gap between the antenna and its surroundings as small as possible or by bringing the pressure of the gap closer to the pressure in the processing chamber. Alternatively, several Torr of a non-reactive heat-transfer promoting gas such as He gas may be introduced into fine gaps formed around the antenna to dissipate heat generated at the antenna.

摘要翻译： 在高频感应等离子体蚀刻装置中，馈送高频功率的天线与处理室之间的空间与具有适当厚度的绝缘材料绝缘，同时天线被保护免受等离子体或反应性 用于等离子体处理的气体和与等离子体接触的一侧的表面被绝缘材料如氧化铝和石英覆盖。 将绝缘材料和天线置于真空中。 由于包含绝缘材料和天线的处理室可以承受大气压力的压力差，所以绝缘材料所需要的就是其承受等离子体气氛的能力。 因此，可以使绝缘材料变薄，并且以高密度均匀地产生等离子体。 通过在天线及其周围环境之间尽可能小的间隙或通过使间隙的压力更接近处理室中的压力而将在天线处产生的热量散发到外部。 或者，可以将诸如He气体的非反应性热传递促进气体的几个Torr引入形成在天线周围的细小间隙中，以散发在天线处产生的热量。

公开(公告)号：US06180019B2

公开(公告)日：2001-01-30

申请号：US08979949

申请日：1997-11-26

申请人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

发明人： Hideyuki Kazumi ,  Tsutomu Tetsuka ,  Ryoji Nishio ,  Masatsugu Arai ,  Ken Yoshioka ,  Tsunehiko Tsubone ,  Akira Doi ,  Manabu Edamura ,  Kenji Maeda ,  Saburo Kanai

IPC分类号： H05H102

CPC分类号： H01J37/32174 ,  H01J37/32009 ,  H01J37/321

摘要： A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

摘要翻译： 通过向天线馈送由射频电源产生的射频电力产生等离子体，并且天线的一端通过可变电容的电容器接地到地球。 法拉第屏蔽与地电隔离，可变电容器的电容被确定为这样一个值，即天线两端的电压可以相等于绝对值并反转以减少壁的部分去除 等离子体点火后。 在点燃等离子体时，电容器的电容被调整到比将壁损坏最小化的更大或更小的值。

公开(公告)号：US20090095423A1

公开(公告)日：2009-04-16

申请号：US12330016

申请日：2008-12-08

申请人： Go MIYA ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

发明人： Go MIYA ,  Manabu Edamura ,  Ken Yoshioka ,  Ryoji Nishio

IPC分类号： H01L21/3065

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069

摘要： A plasma processing apparatus for performing plasma processing on an object to be processed, including: a processing chamber for performing plasma etching on an object to be processed; a first gas inlet provided at an upper portion of the processing chamber for supplying gas to a center portion in the processing chamber; a plurality of second gas inlets placed on an outer circumference of the first gas inlet for supplying gas to an outer circumference portion in the processing chamber; two lines of gas supply systems for supplying processing gases to the first gas inlet and the second gas inlets, respectively; an evacuation means for reducing the pressure in the processing chamber; an electrode on which the object to be processed is placed disposed in the processing chamber opposed to the first gas inlet and the second gas inlets; a high frequency power supply for generating plasma; and additional gas supply systems provided to the two lines of gas supply systems, respectively, for adding a gas for generating a depositional reaction product as additional gas via gas flow rate regulators at a given flow rate ratio.

摘要翻译： 一种用于对待处理物体进行等离子体处理的等离子体处理装置，包括：处理室，用于对被处理物体进行等离子体蚀刻; 第一气体入口设置在处理室的上部，用于向处理室中的中心部分供应气体; 多个第二气体入口，其放置在所述第一气体入口的外周上，用于将气体供给到所述处理室中的外周部; 两条气体供应系统，用于分别向第一气体入口和第二气体入口供应处理气体; 用于减小处理室中的压力的​​抽空装置; 放置在与第一气体入口和第二气体入口相对的处理室中的待处理物体的电极; 用于产生等离子体的高频电源; 以及分别提供给两条气体供应系统的附加气体供应系统，用于通过气体流量调节器以给定的流速比添加用于产生作为附加气体的沉积反应产物的气体。