公开(公告)号：US20080182347A1

公开(公告)日：2008-07-31

申请号：US11998901

申请日：2007-12-03

Applicant: Kenneth Steeples ,  Adam Bertuch ,  Edward Tsidilkovski

Inventor： Kenneth Steeples ,  Adam Bertuch ,  Edward Tsidilkovski

IPC: H01L21/66 ,  B05C11/00

CPC classification number: G01R31/2648 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24592 ,  H01J2237/31703 ,  H01L21/76254 ,  H01L22/14

Abstract: A method of in-line characterization of ion implant process, during the SOI bond and cleave manufacturing or engineered silicon layer fabrication. In one embodiment, the method includes the steps of illuminating the engineered donor wafer using a modulated light source; performing a non-contact SPV measurement on the silicon wafer; measuring a dynamic charge (Qd) in response to implant induced crystal damage; and determining the accuracy and uniformity of the value of an implant parameter in response to the dynamic charge. In another embodiment, In another embodiment, the step of determining utilizes the equation VPV≈kTΦ/ωQnet where VPV is photo voltage generated in the implanted wafer, Φ is a light flux of the modulated light source, T is temperature of the wafer, and ω is a light modulation frequency of the modulated light source.

Abstract translation: 离子注入工艺的在线表征的方法，在SOI键和切割制造或工程硅层制造期间。 在一个实施例中，该方法包括以下步骤：使用调制光源照射工程施主晶圆; 在硅晶片上执行非接触SPV测量; 响应于植入物诱导的晶体损伤测量动态电荷（Q SUB）; 以及响应于动态电荷确定植入物参数的值的精度和均匀性。 在另一个实施例中，在另一个实施例中，确定步骤利用方程式V↑≈kTPhi/ωQ> net> where where where where where where where where where where where where where where where where where where where generated generated generated generated 在植入晶片中，Phi是调制光源的光通量，T是晶片的温度，ω是调制光源的调光频率。

公开(公告)号：US20080048636A1

公开(公告)日：2008-02-28

申请号：US11894032

申请日：2007-08-16

Applicant: Edward Tsidilkovski ,  Kenneth Steeples

Inventor： Edward Tsidilkovski ,  Kenneth Steeples

IPC: G01J1/42

CPC classification number: H01L22/12 ,  G01B7/06 ,  G01B11/0625

Abstract: A method and apparatus for thickness measurement of an active layer of a silicon-on-insulator material comprising a layered structure of silicon film, a buried oxide layer and a silicon substrate. In one embodiment, the method comprises the steps of directing a low intensity light of an energy greater than the silicon band-gap on the silicon film, the energy of light sufficient to be substantially absorbed within the silicon film such that the error from the substrate excitation is small compared to the small signal calibration of the apparatus; modifying the surface potential with the chemical treatment, electrical bias or corona, measuring surface photovoltage of the silicon film; and calculating the thickness of the silicon film in response to a non-contact photovoltage measurement of the semiconductor layered structure.

Abstract translation: 一种用于厚度测量绝缘体上硅材料的有源层的方法和装置，包括硅膜，掩埋氧化物层和硅衬底的分层结构。 在一个实施例中，该方法包括以下步骤：在硅膜上引导大于硅带隙的能量的低强度光，足以在硅膜内基本上吸收光的能量，使得来自衬底的误差 激励与装置的小信号校准相比较小; 用化学处理，电偏置或电晕改变表面电位，测量硅膜的表面光电压; 以及响应于所述半导体层状结构的非接触光电压测量来计算所述硅膜的厚度。

公开(公告)号：US20050074909A1

公开(公告)日：2005-04-07

申请号：US10894357

申请日：2004-07-19

Applicant: Kenneth Steeples

Inventor： Kenneth Steeples

IPC: H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/04 ,  H01L21/66

CPC classification number: H01L21/67253 ,  H01J37/304 ,  H01J37/3171

Abstract: The invention relates to a method and apparatus for real-time in-situ implantation and measurement incorporating a feedback loop to adjust the implantation dose of a substrate during the manufacturing and testing of semiconductor wafers. During processing, the substrate, such as a silicon wafer, is transported between a measuring device and an implantation device multiple times to ensure that where the beam from the implantation device hits the substrate, the doping concentration falls within the range of desired parameters.

Abstract translation: 本发明涉及一种用于实时原位植入和测量的方法和装置，其包括在半导体晶片的制造和测试期间调整衬底的注入剂量的反馈环路。 在处理期间，衬底（例如硅晶片）在测量装置和注入装置之间多次传输，以确保来自注入装置的光束撞击衬底的地方，掺杂浓度落在所需参数的范围内。