公开(公告)号：US08680478B2

公开(公告)日：2014-03-25

申请号：US13544105

申请日：2012-07-09

申请人： Masato Ofuji ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

发明人： Masato Ofuji ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

IPC分类号： G01J1/42 ,  G01T1/00 ,  H04N3/14 ,  H04N5/335

CPC分类号： H04N5/3765 ,  H01L27/14609 ,  H01L27/14663 ,  H01L27/14692 ,  H04N5/32

摘要： A detection apparatus includes a driving circuit unit in which a plurality of unit circuits each including a first circuit that supplies conducting voltage of a switch element of a pixel based on voltage included in a clock signal to a driving wire in accordance with an initiation signal and a second circuit that supplies non-conducting voltage of the switch element to the driving wire in accordance with a termination signal are provided for the plurality of corresponding driving wires and a control unit that supplies the clock signal to the driving circuit unit. The control unit supplies control voltage to the plurality of unit circuits, and each of the plurality of unit circuits further includes a third circuit that continues to supply the non-conducting voltage to the corresponding driving wire in accordance with the control voltage.

摘要翻译： 检测装置包括驱动电路单元，其中多个单元电路各自包括第一电路，该第一电路根据启动信号将基于时钟信号中包含的电压的像素的开关元件的导通电压提供给驱动线， 为多个相应的驱动线提供了根据终止信号将开关元件的非导通电压提供给驱动线的第二电路，以及将时钟信号提供给驱动电路单元的控制单元。 控制单元向多个单元电路提供控制电压，并且多个单元电路中的每一个还包括第三电路，其继续根据控制电压向相应的驱动线提供非导通电压。

公开(公告)号：US08586399B2

公开(公告)日：2013-11-19

申请号：US13477401

申请日：2012-05-22

申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

IPC分类号： H01L21/00

CPC分类号： H01L27/1461 ,  H01L27/1462 ,  H01L27/14676 ,  H01L27/14685 ,  H01L27/14692

摘要： In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

摘要翻译： 在制造包括衬底上的像素的检测装置的方法中，每个像素包括开关元件和包括电极上的杂质半导体层的转换元件，该电容器设置在开关元件上方并且每像素隔离开关元件和 电极被连接在形成在保护层和层间绝缘层中的接触孔中，所述接触孔设置在开关元件和电极之间，该方法包括在与层间绝缘层接触的电极之间的层间绝缘层上形成绝缘构件 形成覆盖所述绝缘构件和所述电极的杂质半导体膜，以及形成覆盖所述电极的一部分的正投影像的所述保护层的区域的覆盖层，所述部分包括所述触点内的电平差 孔。

公开(公告)号：US20130099093A1

公开(公告)日：2013-04-25

申请号：US13610472

申请日：2012-09-11

申请人： Jun Kawanabe ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

发明人： Jun Kawanabe ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

IPC分类号： G01J1/44 ,  H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14665

摘要： A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.

摘要翻译： 检测装置包括设置在基板上的晶体管，设置在晶体管上方并连接到晶体管的转换元件，与转换元件并联连接到晶体管的电容器，电容器包括在基板和转换元件之间的欧姆 连接到转换元件的接触部分，连接到欧姆接触部分的半导体部分和经由绝缘层设置在与半导体部分和欧姆接触部分相对的位置处的导电部分，以及电位供给单元，被配置为选择性地 向导电部分提供第一电位，以将半导体部件中的电荷载流子积累，并且向导电部件累积第二电位以耗尽半导体部件。 以上述方式配置的检测装置能够控制像素电容，从而实现高的信噪比。

公开(公告)号：US20120261581A1

公开(公告)日：2012-10-18

申请号：US13444560

申请日：2012-04-11

申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Hiroshi Wayama

发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Hiroshi Wayama

IPC分类号： G01T1/20 ,  H01L31/18

CPC分类号： H01L27/14632 ,  H01L27/14687

摘要： A method is provided for manufacturing a high-performance plane-type detector without the increase in cost or decrease in yield accompanying the increase in the number of masks. The method includes the first step of forming a first electrode and a control electrode from a first electroconductive film deposited on a substrate, the second step of depositing an insulating film and a semiconductor film in that order after the first step, the third step of depositing an impurity semiconductor film and a second electroconductive film in that order after the second step, and forming a common electrode wire and a first electroconductive member from the second electroconductive film, and the fourth step of forming with the same mask a second electrode and a second electroconductive member from a transparent electroconductive oxide film formed after the third step, and impurity semiconductor layers from the impurity semiconductor film.

摘要翻译： 提供了一种用于制造高性能平面型检测器的方法，而不增加成本或随着掩模数量的增加而产量降低。 该方法包括从沉积在基板上的第一导电膜形成第一电极和控制电极的第一步骤，在第一步骤之后依次沉积绝缘膜和半导体膜的第二步骤，第三步骤 杂质半导体膜和第二导电膜，并且从第二导电膜形成公共电极线和第一导电构件，第四步骤，用相同的掩模形成第二电极和第二导电膜 来自在第三步骤之后形成的透明导电氧化物膜的导电构件和来自杂质半导体膜的杂质半导体层。

公开(公告)号：US20110092016A1

公开(公告)日：2011-04-21

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/26 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US20080197347A1

公开(公告)日：2008-08-21

申请号：US12002926

申请日：2007-12-19

申请人： Howard Edan Katz ,  Masato Ofuji

发明人： Howard Edan Katz ,  Masato Ofuji

IPC分类号： H01L51/00

CPC分类号： H01L51/0013

摘要： Techniques for disposing an organic semiconductor film on a receiver substrate, comprising the steps of: depositing an organic semiconductor film onto a donor substrate, the semiconductor film having a first surface facing the donor substrate and having an exposed second surface; bringing the exposed second surface adjacent a receiver substrate such that the semiconductor film is in contact with both substrates; and then, moving the donor and receiver substrates apart; and wherein a surface portion of the receiver substrate is maintained above its glass transition during the moving step. Active organic semiconductor devices.

摘要翻译： 用于在接收器基板上设置有机半导体膜的技术包括以下步骤：在施主衬底上沉积有机半导体膜，所述半导体膜具有面向供体衬底并具有暴露的第二表面的第一表面; 使暴露的第二表面邻近接收器基板，使得半导体膜与两个基板接触; 然后将供体和接收器基板分开; 并且其中所述接收器基板的表面部分在所述移动步骤期间保持在其玻璃化转变以上。 活性有机半导体器件。

公开(公告)号：US20060216910A1

公开(公告)日：2006-09-28

申请号：US11095014

申请日：2005-03-31

申请人： Howard Katz ,  Masato Ofuji

发明人： Howard Katz ,  Masato Ofuji

IPC分类号： H01L21/30

CPC分类号： H01L51/0013

摘要： Techniques for disposing an organic semiconductor film on a receiver substrate, comprising the steps of: depositing an organic semiconductor film onto a donor substrate, the semiconductor film having a first surface facing the donor substrate and having an exposed second surface; bringing the exposed second surface adjacent a receiver substrate such that the semiconductor film is in contact with both substrates; and then, moving the donor and receiver substrates apart; and wherein a surface portion of the receiver substrate is maintained above its glass transition during the moving step. Active organic semiconductor devices.

摘要翻译： 用于在接收器基板上设置有机半导体膜的技术包括以下步骤：在施主衬底上沉积有机半导体膜，所述半导体膜具有面向供体衬底并具有暴露的第二表面的第一表面; 使暴露的第二表面邻近接收器基板，使得半导体膜与两个基板接触; 然后将供体和接收器基板分开; 并且其中所述接收器基板的表面部分在所述移动步骤期间保持在其玻璃化转变以上。 活性有机半导体器件。

公开(公告)号：US20110062441A1

公开(公告)日：2011-03-17

申请号：US12992071

申请日：2009-05-11

申请人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L33/08 ,  H01L33/16 ,  H01L33/26

CPC分类号： H01L29/78645 ,  H01L29/78633

摘要： Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

摘要翻译： 提供一种半导体器件，其包括至少包含半导体作为元件的半导体元件，其特征在于包括：用于使波长比半导体的吸收边缘波长长的光照射半导体的机构; 以及调光机构，其设置在光通过的光路的一部分中，用于调节从强度，照射时间和光的波长选择的至少一个因素，其中半导体元件的阈值电压被改变 光由调光机构调节。

公开(公告)号：US07371605B2

公开(公告)日：2008-05-13

申请号：US11095014

申请日：2005-03-31

申请人： Howard Edan Katz ,  Masato Ofuji

发明人： Howard Edan Katz ,  Masato Ofuji

IPC分类号： H01L51/40

CPC分类号： H01L51/0013

摘要： Techniques for disposing an organic semiconductor film on a receiver substrate, comprising the steps of: depositing an organic semiconductor film onto a donor substrate, the semiconductor film having a first surface facing the donor substrate and having an exposed second surface; bringing the exposed second surface adjacent a receiver substrate such that the semiconductor film is in contact with both substrates; and then, moving the donor and receiver substrates apart; and wherein a surface portion of the receiver substrate is maintained above its glass transition during the moving step. Active organic semiconductor devices.

公开(公告)号：US08304298B2

公开(公告)日：2012-11-06

申请号：US12597211

申请日：2008-05-15

申请人： Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

发明人： Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1233

摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.

摘要翻译： 为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度 第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。