公开(公告)号：US20120232238A1

公开(公告)日：2012-09-13

申请号：US13388855

申请日：2010-08-03

申请人： Howard Edan Katz ,  Qingdong Zheng ,  Byung Jun Jung

发明人： Howard Edan Katz ,  Qingdong Zheng ,  Byung Jun Jung

IPC分类号： C08G75/06 ,  B82Y30/00

CPC分类号： H01L51/0036 ,  C08G61/126 ,  C08G2261/1336 ,  C08G2261/164 ,  C08G2261/3142 ,  C08G2261/3223 ,  C08G2261/91 ,  H01L51/0043 ,  H01L51/0044 ,  H01L51/0056 ,  H01L51/0068 ,  Y02E10/549

摘要： Ladder-type oligo-p-phenylene containing donor-acceptor copolymers are disclosed. The ladder-type oligo-p-phenylene can be used as an electron donor unit in the disclosed copolymers to provide a deeper highest occupied molecular orbital (HOMO) level for obtaining polymeric solar cells having a higher open-circuit voltage. Particular electron-accepting units, e.g., a divalent fused-ring heterocyclic moiety selected from the group consisting of a substituted or unsubstituted benzothiadiazole, a substituted or unsubstituted quinoxaline, a substituted or unsubstituted benzobisthiazole, and a substituted or unsubstituted naphthothiadiazole, can be used to tune the electronic band gaps of the polymers for a better light harvesting ability. The disclosed copolymers exhibit field-effect mobilities as high as 0.011 cm2/(V s). Compared to fluorene-containing copolymers with the same acceptor unit, the disclosed ladder-type oligo-p-phenylene containing copolymers have enhanced and bathochromically shifted absorption bands and much better solubility in organic solvents.

摘要翻译： 公开了含梯度型低聚对苯二烯的供体 - 受体共聚物。 在所公开的共聚物中，梯型低聚对亚苯基可用作电子给体单元，以提供更高的最高占据分子轨道（HOMO）水平，以获得具有较高开路电压的聚合物太阳能电池。 可以使用特定的电子接受单元，例如选自取代或未取代的苯并噻二唑，取代或未取代的喹喔啉，取代或未取代的苯并二噻唑和取代或未取代的萘并噻二唑的二价稠环杂环部分， 调整聚合物的电子带隙以获得更好的光捕获能力。 所公开的共聚物表现出高达0.011cm2 /（Vs）的场效应迁移率。 与具有相同受体单元的含芴共聚物相比，所公开的梯型低聚对亚苯基共聚物具有增强的和红移的吸收带和在有机溶剂中更好的溶解度。

公开(公告)号：US07704784B2

公开(公告)日：2010-04-27

申请号：US11354365

申请日：2006-02-15

申请人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

发明人： Zhenan Bao ,  Howard Edan Katz ,  Jeffrey Scott Meth

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0516

摘要： Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

摘要翻译： 半导体装置，包括：具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域，覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。 这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层，覆盖第二材料层的半导体层的第二区域。

公开(公告)号：US07385220B2

公开(公告)日：2008-06-10

申请号：US10822510

申请日：2004-04-12

申请人： Jimmy Granstrom ,  Howard Edan Katz

发明人： Jimmy Granstrom ,  Howard Edan Katz

IPC分类号： H01L29/08 ,  H01L35/04 ,  H01L51/00 ,  H01L21/00 ,  B01J21/08 ,  B23B23/02

CPC分类号： D06M15/513 ,  D06M15/263 ,  D06M15/59 ,  D06M15/63 ,  G09G3/20 ,  H01L51/052 ,  Y10T428/249924

摘要： Fibers having an electrically conductive outer surface and having an average diameter of less than about 5 millimeters; and a dielectric polymeric layer comprising a polymer having a main polymer chain on the outer surface, the dielectric polymeric layer having a thickness of less than about 50 microns, the main polymer chain comprising carbon. Fiber transistors having an on/off ratio of at least about 10. Techniques for making fibers and fiber transistors.

摘要翻译： 具有导电外表面并具有小于约5毫米的平均直径的纤维; 以及介电聚合物层，其包含在外表面上具有主聚合物链的聚合物，所述介电聚合物层具有小于约50微米的厚度，所述主聚合物链包含碳。 具有至少约10的开/关比的光纤晶体管。用于制造光纤和光纤晶体管的技术。

公开(公告)号：US07371605B2

公开(公告)日：2008-05-13

申请号：US11095014

申请日：2005-03-31

申请人： Howard Edan Katz ,  Masato Ofuji

发明人： Howard Edan Katz ,  Masato Ofuji

IPC分类号： H01L51/40

CPC分类号： H01L51/0013

摘要： Techniques for disposing an organic semiconductor film on a receiver substrate, comprising the steps of: depositing an organic semiconductor film onto a donor substrate, the semiconductor film having a first surface facing the donor substrate and having an exposed second surface; bringing the exposed second surface adjacent a receiver substrate such that the semiconductor film is in contact with both substrates; and then, moving the donor and receiver substrates apart; and wherein a surface portion of the receiver substrate is maintained above its glass transition during the moving step. Active organic semiconductor devices.

公开(公告)号：US06885024B2

公开(公告)日：2005-04-26

申请号：US10256885

申请日：2002-09-27

申请人： Zhenan Bao ,  Howard Edan Katz ,  Christian Kloc

发明人： Zhenan Bao ,  Howard Edan Katz ,  Christian Kloc

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0012 ,  H01L51/0014

摘要： A method fabricates ICs in which organic semiconductor crystallites serve as active channels of semiconductor devices. The method includes providing a substrate with a surface that has a preselected pattern of adhesion sites located thereon. The adhesion sites are prepared to adhere crystallites of an organic semiconductor. The method also includes applying a plurality of crystallites of the organic semiconductor to the surface to enable a portion of the applied crystallites to adhere at the prepared adhesion sites.

公开(公告)号：US06661299B2

公开(公告)日：2003-12-09

申请号：US09793050

申请日：2001-02-26

申请人： Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

发明人： Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

IPC分类号： H03B100

CPC分类号： G01N27/4141 ,  G01N27/4148 ,  H01L27/28 ,  H01L27/286 ,  H01L51/0036 ,  H01L51/0078 ,  H01L51/0545

摘要： Circuits include at least one-odor sensitive organic transistor having a conduction channel whose conductivity changes in response to certain odors. The organic transistors are interconnected to increase their response to selected odor signals. The organic transistors may be interconnected to form a ring oscillator whose frequency of oscillation changes in response to an odor signal and in which the alternating signal applied to the gate electrodes of the organic transistors enhances their recovery and reduces their drift.

公开(公告)号：US06575013B2

公开(公告)日：2003-06-10

申请号：US09793642

申请日：2001-02-26

申请人： Zhenan Bao ,  Brian Keith Crone ,  Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

发明人： Zhenan Bao ,  Brian Keith Crone ,  Ananth Dodabalapur ,  Alan Gelperin ,  Howard Edan Katz

IPC分类号： G01N33497

CPC分类号： G01N33/0031 ,  G01N27/4148 ,  G01N33/0047

摘要： An electronic odor sensor includes first and second amplifiers, a biasing network, and a device connected to receive the output signals from the first and second amplifiers. The device is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.

公开(公告)号：US06278127B1

公开(公告)日：2001-08-21

申请号：US08441142

申请日：1995-05-15

申请人： Ananth Dodabalapur ,  Robert Cort Haddon ,  Howard Edan Katz ,  Luisa Torsi

发明人： Ananth Dodabalapur ,  Robert Cort Haddon ,  Howard Edan Katz ,  Luisa Torsi

IPC分类号： H01L5100

CPC分类号： H01L51/0562 ,  B82Y10/00 ,  G09G3/3648 ,  G09G2300/08 ,  G11C13/0014 ,  H01L27/283 ,  H01L51/0036 ,  H01L51/0046 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0541 ,  H01L51/0545

摘要： Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of &agr;-6T with a 40 nm thick layer of C60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm &agr;-6T layer.

摘要翻译： 公开了根据偏置条件可以是n沟道或p沟道晶体管的有机薄膜晶体管。 期望这种晶体管在互补电路中被广泛使用。 本发明晶体管的具体实施方案包括15nm厚的α-6T层，其上具有40nm厚的C60层。 后者通过适当的电惰性层，特别是通过40nm的α-6T层被保护免受环境的降解。

公开(公告)号：US06221536B1

公开(公告)日：2001-04-24

申请号：US09573488

申请日：2000-05-16

申请人： Lisa Dhar ,  Howard Edan Katz

发明人： Lisa Dhar ,  Howard Edan Katz

IPC分类号： G03H104

CPC分类号： G03H1/0256 ,  G03F7/001 ,  G03H1/02 ,  G03H2001/0264 ,  G03H2001/186 ,  G03H2250/44

摘要： The invention relates to use of a material containing a polymerizable monomer or oligomer, the material exhibiting desirable shrinkage compensation upon polymerization. The material contains an expansion agent having a cleaving moiety with the capacity to be cleaved or fragmented by a catalytic reaction, e.g., acid catalysis. The cleavage, by increasing the number of molecules in the material, causes expansion that compensates, at least in part, for shrinkage induced by polymerization of the monomer or oligomer. The expansion agent is capable of providing compensation such that no more than 0.4%, advantageously no more than 0.2%, volume shrinkage per molar concentration of polymerized monomer functional groups occurs, where such compensation is performed at relatively low temperatures of less than 40° C.

摘要翻译： 本发明涉及含有可聚合单体或低聚物的材料的用途，该材料在聚合时表现出理想的收缩补偿。 该材料含有具有裂解部分的膨胀剂，其具有通过催化反应例如酸催化裂解或破碎的能力。 通过增加材料中的分子数量来进行切割，导致膨胀，至少部分地补偿由单体或低聚物的聚合引起的收缩。 膨胀剂能够提供补偿，使得每摩尔浓度的聚合单体官能团的体积收缩率不超过0.4％，有利地不超过0.2％，其中在相对低于40℃的较低温度下进行这种补偿 。

公开(公告)号：US08963126B2

公开(公告)日：2015-02-24

申请号：US12743977

申请日：2009-01-07

申请人： Howard Edan Katz ,  Bhola Nath Pal ,  Kevin Cua See ,  Byung Jun Jung

发明人： Howard Edan Katz ,  Bhola Nath Pal ,  Kevin Cua See ,  Byung Jun Jung

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/40 ,  H01L51/05 ,  H01G9/00 ,  H01G9/022 ,  H01G9/045 ,  H01L51/10 ,  C07D333/50 ,  C07D409/00 ,  C07D495/22

CPC分类号： H01L29/408 ,  H01G9/00 ,  H01G9/022 ,  H01G9/045 ,  H01L29/401 ,  H01L51/0053 ,  H01L51/0533 ,  H01L51/0558 ,  H01L51/102

摘要： Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.

摘要翻译： 混合半导体介电材料和使用混合半导体介电材料的电子或电光器件。 混合半导体介电材料包括具有提供n型半导体性质的芯部分和向混合半导体介电材料层提供介电特性的侧链的分子。 具体的杂化半导体介电材料包括具有侧链的四羧酸二酰亚胺化合物，其具有通过亚烷基或杂亚烷基连接基团与四羧酸二酰亚胺结构连接的氟取代的脂族或芳族部分。