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    Method of forming a thin layer structure
    13.
    发明授权
    Method of forming a thin layer structure 有权
    形成薄层结构的方法

    公开(公告)号：US08492251B2

    公开(公告)日：2013-07-23

    申请号：US13596339

    申请日：2012-08-28

    申请人： Jong-Hoon Kang ,  Bong-Jin Kuh ,  Tae-Gon Kim ,  Han-Mei Choi ,  Ki-Chul Kim ,  Eun-Young Jo

    发明人： Jong-Hoon Kang ,  Bong-Jin Kuh ,  Tae-Gon Kim ,  Han-Mei Choi ,  Ki-Chul Kim ,  Eun-Young Jo

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02433 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/268 ,  H01L21/324 ,  H01L29/045

    摘要： A thin layer structure includes a substrate, a blocking pattern that exposes part of an upper surface of the substrate, and a single crystalline semiconductor layer on the part of the upper surface of the substrate exposed by the pattern and in which all outer surfaces of the single crystalline semiconductor layer have a crystallographic orientation. The thin layer structure is formed by an SEG process in which the temperature is controlled to prevent migration of atoms in directions towards the central portion of the upper surface of the substrate. Thus, sidewall surfaces of the layer will not be constituted by facets.

    摘要翻译： 薄层结构包括衬底，暴露衬底的上表面的一部分的阻挡图案以及在衬底的上表面部分上的单晶半导体层，其中所述衬底的所有外表面 单晶半导体层具有<100>晶体取向。 薄层结构由SEG工艺形成，其中控制温度以防止原子沿着朝向衬底上表面的中心部分的方向迁移。 因此，该层的侧壁表面将不由小平面构成。

    Method of fabricating semiconductor device
    15.
    发明申请
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20130005110A1

    公开(公告)日：2013-01-03

    申请号：US13478450

    申请日：2012-05-23

    申请人： Jun-Ho Yoon ,  Bong-Jin Kuh ,  Ki-Chul Kim ,  Gyung-Jin Min ,  Tae-Jin Park ,  Sang-Ryol Yang ,  Jung-Min Oh ,  Sang-Yoon Woo ,  Young-Sub Yoo ,  Ji-Eun Lee ,  Jong-Sung Lim ,  Yong-Moon Jang ,  Han-Mei Choi ,  Je-Woo Han

    发明人： Jun-Ho Yoon ,  Bong-Jin Kuh ,  Ki-Chul Kim ,  Gyung-Jin Min ,  Tae-Jin Park ,  Sang-Ryol Yang ,  Jung-Min Oh ,  Sang-Yoon Woo ,  Young-Sub Yoo ,  Ji-Eun Lee ,  Jong-Sung Lim ,  Yong-Moon Jang ,  Han-Mei Choi ,  Je-Woo Han

    IPC分类号： H01L21/02

    CPC分类号： H01L28/90 ,  H01L27/10852

    摘要： Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

    摘要翻译： 提供一种制造具有电容器的半导体器件的方法。 该方法包括形成复合层，包括顺序地堆叠在第一至第n牺牲层和第一至第n支撑层上的交替层上的衬底上。 形成贯穿复合层的多个开口。 在多个开口中形成下电极。 去除第一至第n牺牲层的至少部分以限定在多个开口中相邻的开口和形成在其中的下电极之间延伸的下电极的支撑结构，支撑结构包括第一至第n支撑层和间隙 在第一至第n个支撑层中相邻的第一至第n个牺牲层已被去除之间的区域。 在下电极上形成介电层，在电介质层上形成上电极。

    Self-generating bidet
    16.
    发明授权
    Self-generating bidet 有权
    自发坐浴盆

    公开(公告)号：US08321968B2

    公开(公告)日：2012-12-04

    申请号：US13086974

    申请日：2011-04-14

    申请人： Man-Uk Park ,  Sung-Worl Jin ,  Young-Sang Yun ,  Ji-Hye Jeong ,  In-Seok Seo ,  Ki-Chul Kim ,  Joung-Ho Son

    发明人： Man-Uk Park ,  Sung-Worl Jin ,  Young-Sang Yun ,  Ji-Hye Jeong ,  In-Seok Seo ,  Ki-Chul Kim ,  Joung-Ho Son

    IPC分类号： A47K3/022

    CPC分类号： E03D9/08

    摘要： There is provided a self-generating bidet that can perform power-generation using water supplied to the bidet or a water tank. The self-generating bidet, injecting water through a nozzle part, includes a water inlet into which water is introduced; a generator generating power through the water introduced by the water inlet; a charging unit storing electricity generated from the generator; and a nozzle passage part provided between the generator and the nozzle part to supply the water passing through the generator to the nozzle part. The self-generating bidet further includes a controller controlling the generator to be driven by opening a passage of the nozzle passage part in order to allow the water to be discharged through the nozzle part when a voltage of the charging unit is lower than a predetermined reference voltage.

    摘要翻译： 提供了可以使用供给到坐浴盆或水箱的水进行发电的自发坐浴盆。 自发生的坐浴盆通过喷嘴部分注入水，包括引入水的进水口; 通过由入水口引入的水发电的发电机; 存储从发电机产生的电的充电单元; 以及喷嘴通道部分，设置在发电机和喷嘴部分之间，以将通过发生器的水供应到喷嘴部分。 自发坐浴盆还包括控制发电机的控制器，其通过打开喷嘴通道部分的通道来驱动，以便当充电单元的电压低于预定参考值时允许水通过喷嘴部件排出 电压。

    Methods of manufacturing a semiconductor device
    17.
    发明授权
    Methods of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07981784B2

    公开(公告)日：2011-07-19

    申请号：US12381175

    申请日：2009-03-09

    申请人： Dong-Suk Shin ,  Ki-Chul Kim ,  Jung-Deog Lee

    发明人： Dong-Suk Shin ,  Ki-Chul Kim ,  Jung-Deog Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/7843

    摘要： Isolation regions are formed on a substrate to define an active region. A gate electrode is formed on the active region. A spacer structure is formed on a sidewall of the gate electrode. A gate silicide layer is formed on the gate electrode and a source/drain silicide layer is formed on the active region adjacent to the gate electrode. An upper portion of the gate silicide layer and a portion of the spacer structure are simultaneously removed to form a spacer structure pattern and a gate silicide layer pattern. A stress layer is formed to cover the gate electrode and spacer structure pattern.

    摘要翻译： 隔离区形成在衬底上以限定有源区。 在有源区上形成栅电极。 间隔结构形成在栅电极的侧壁上。 在栅电极上形成栅极硅化物层，并且在与栅电极相邻的有源区上形成源极/漏极硅化物层。 栅极硅化物层的上部和间隔物结构的一部分被同时去除以形成间隔物结构图案和栅极硅化物层图案。 形成应力层以覆盖栅电极和间隔结构图案。

    Base station system for mobile communication
    18.
    发明授权
    Base station system for mobile communication 有权
    用于移动通信的基站系统

    公开(公告)号：US07684435B2

    公开(公告)日：2010-03-23

    申请号：US10459542

    申请日：2003-06-12

    申请人： Ki-Chul Kim ,  Sung-Jun Baik

    发明人： Ki-Chul Kim ,  Sung-Jun Baik

    IPC分类号： H04J3/16 ,  H04J3/22 ,  H04B1/38 ,  H04J3/24 ,  H04M1/00

    CPC分类号： H04W92/12 ,  H04W88/085

    摘要： A base station system for mobile communication between a mobile terminal and a base station controller, the base station system utilizing a digital modem unit for receiving a signal to be transmitted to the mobile terminal from the base station controller, framing the received signal according to a frame format for transmission different than an Ethernet specified data format, the frame format being a predetermined remote RF (radio frequency) unit frame, the digital modem unit transmitting a plurality of the remote RF unit frames in series over an Ethernet using twisted pair cable, at least one remote RF unit hub receiving the remote RF unit frames transmitted by the digital modem unit and distributing the received remote RF unit frames to a plurality of remote RF units via the Ethernet using twisted pair cable, and the plurality of remote RF units producing a deframed signal by deframing the remote RF unit frames received from the remote RF unit hub, modulating the deframed signal to an RF signal, and transmitting the RF signal to the mobile terminal, wherein the remote RF unit frames are divided into a traffic frame for use in transmitting traffic data, which is transmitted and received by the mobile terminal and a control frame for use in transmitting a control address and control data, the control address differentiating the plurality of remote RF units from one another, the control data containing a command to control operation and functions of the plurality of remote RF units.

    摘要翻译： 一种用于移动终端和基站控制器之间的移动通信的基站系统，所述基站系统利用数字调制解调器单元从基站控制器接收要发送到移动终端的信号，根据 用于传输的帧格式不同于以太网指定数据格式，帧格式是预定的远程射频（射频）单元帧，数字调制解调器单元使用双绞线通过以太网串行发送多个远程射频单元帧， 至少一个远程RF单元集线器接收由数字调制解调器单元发送的远程RF单元帧，并且经由以太网使用双绞线将所接收的远程RF单元帧分发到多个远程RF单元，并且所述多个远程RF单元产生 通过解除从远程RF单元集线器接收的远程RF单元帧来解调去帧信号的失真信号 RF信号，并且将RF信号发送到移动终端，其中远程RF单元帧被划分为用于发送由移动终端发送和接收的业务数据的业务帧和用于发送的控制帧 控制地址和控制数据，所述控制地址将所述多个远程RF单元彼此区分开，所述控制数据包含用于控制所述多个远程RF单元的操作和功能的命令。

    Methods of manufcturing a semiconductor device
    19.
    发明申请
    Methods of manufcturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20090227082A1

    公开(公告)日：2009-09-10

    申请号：US12381175

    申请日：2009-03-09

    申请人： Dong-Suk Shin ,  Ki-Chul Kim ,  Jung-Deog Lee

    发明人： Dong-Suk Shin ,  Ki-Chul Kim ,  Jung-Deog Lee

    IPC分类号： H01L21/76

    CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/7843

    摘要： Isolation regions are formed on a substrate to define an active region. A gate electrode is formed on the active region. A spacer structure is formed on a sidewall of the gate electrode. A gate silicide layer is formed on the gate electrode and a source/drain silicide layer is formed on the active region adjacent to the gate electrode. An upper portion of the gate silicide layer and a portion of the spacer structure are simultaneously removed to form a spacer structure pattern and a gate silicide layer pattern. A stress layer is formed to cover the gate electrode and spacer structure pattern.

    摘要翻译： 隔离区形成在衬底上以限定有源区。 在有源区上形成栅电极。 间隔结构形成在栅电极的侧壁上。 在栅电极上形成栅极硅化物层，并且在与栅电极相邻的有源区上形成源极/漏极硅化物层。 栅极硅化物层的上部和间隔物结构的一部分被同时去除以形成间隔物结构图案和栅极硅化物层图案。 形成应力层以覆盖栅电极和间隔结构图案。

    Methods and apparatus for forming thin films for semiconductor devices
    20.
    发明授权
    Methods and apparatus for forming thin films for semiconductor devices 有权
    用于形成半导体器件薄膜的方法和装置

    公开(公告)号：US07273822B2

    公开(公告)日：2007-09-25

    申请号：US11038324

    申请日：2005-01-19

    申请人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

    发明人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

    IPC分类号： H01L21/31

    CPC分类号： C23C16/44 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691

    摘要： Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predetermined temperature in forming the thin film on a substrate. For example, a method for forming a thin film includes supplying a first reactant to a chamber to chemically adsorb the first reactant onto a substrate, the first reactant being bubbled by a first gas that is preheated, purging the chamber to remove residues on the substrate having the first reactant chemically adsorbed, and forming the thin film by a means of chemical displacement by supplying a second reactant to the chamber to chemically adsorb the second reactant onto the substrate.

    摘要翻译： 提供了用于形成用于半导体器件的薄膜的方法和装置，其能够通过在预定温度下预热和提供处理气体和净化气体来形成薄膜来提供和除去含有待形成的薄膜的构成元素的反应物 在基板上。 例如，用于形成薄膜的方法包括将第一反应物供应到室以化学吸附第一反应物到基底上，第一反应物被预热的第一气体鼓泡，清洗室以除去基底上的残留物 使所述第一反应物被化学吸附，并且通过向所述室供应第二反应物以化学吸附所述第二反应物到所述基底上，通过化学位移形成所述薄膜。