公开(公告)号：US20220085045A1

公开(公告)日：2022-03-17

申请号：US17202900

申请日：2021-03-16

Applicant: KIOXIA CORPORATION

Inventor： Satoshi NAGASHIMA ,  Fumitaka ARAI

IPC: H01L27/11565 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, and at least one memory structure. The first conductive layer includes a first portion, a second portion, and a third portion, a fourth portion, and a fifth portion. The first portion is provided between the second portion and the third portion in a second direction. The second conductive layer includes a sixth portion, a seventh portion, and an eighth portion, a ninth portion, and a tenth portion. The sixth portion is provided between the seventh portion and the eighth portion in the second direction. The second portion is provided between the sixth portion and the eighth portion in the second direction.

公开(公告)号：US20220085059A1

公开(公告)日：2022-03-17

申请号：US17190939

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Tatsuya KATO ,  Satoshi NAGASHIMA ,  Yefei HAN ,  Takayuki ISHIKAWA

IPC: H01L27/11582 ,  H01L23/522 ,  H01L29/423 ,  H01L27/1157

Abstract: A semiconductor storage device includes: a first conductive layer extending in a first direction; a second conductive layer that is disposed apart from the first conductive layer in a second direction intersecting the first direction, and extends in the first direction; a plurality of semiconductor layers provided between the first conductive layer and the second conductive layer and arranged in the first direction, each of which includes a first portion facing the first conductive layer, and a second portion facing the second conductive layer; a plurality of first memory cells provided between the first conductive layer and the semiconductor layers, respectively; and a plurality of second memory cells provided between the second conductive layer and the semiconductor layers, respectively. A gap is provided between the two semiconductor layers adjacent in the first direction.

公开(公告)号：US20220085058A1

公开(公告)日：2022-03-17

申请号：US17190871

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Yosuke MURAKAMI ,  Satoshi NAGASHIMA ,  Nobuyuki MOMO ,  Takayuki ISHIKAWA ,  Yusuke ARAYASHIKI

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/00 ,  H01L27/11524 ,  H01L27/1157 ,  G11C7/18

Abstract: A semiconductor storage device includes a substrate, a first wiring, a second wiring, a third wiring, a fourth wiring, a charge storage unit. The first wiring extends in a first direction along a surface of the substrate. The second wiring is aligned with the first wiring in a second direction intersecting with the first direction and extends in the first direction. The third wiring is in contact with the first wiring and the second wiring and includes a semiconductor. The fourth wiring is located between the first wiring and the second wiring, extends in a third direction intersecting with the first direction and the second direction, and is aligned with the third wiring in at least the first direction. The charge storage unit is located between the third wiring and the fourth wiring.

公开(公告)号：US20220077174A1

公开(公告)日：2022-03-10

申请号：US17190865

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Toshifumi KURODA ,  Yusuke SHIMADA ,  Satoshi NAGASHIMA

IPC: H01L27/11578 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11565

Abstract: A semiconductor storage device includes: a conductive layer and a second conductive layer that are arranged in a first direction; a plurality of first semiconductor layers facing the first conductive layer between the first conductive layer and the second conductive layer, the plurality of first semiconductor layers being arranged in a second direction that intersects the first direction; a first charge storage layer that is provided between the plurality of first semiconductor layers and the first conductive layer in the first direction, and extends in the second direction over a plurality of regions between the plurality of first semiconductor layers and the first conductive layer; and a first insulating layer provided between the plurality of first semiconductor layers and the first charge storage layer in the first direction. The first insulating layer includes a first region that faces one end of each of the first semiconductor layers in the second direction, in the first direction, a second region that faces the other end of each of the first semiconductor layers in the second direction, in the first direction, and a third region provided between the first region and the second region in the second direction. A nitrogen concentration in the first region and the second region is lower than a nitrogen concentration in the third region.

公开(公告)号：US20210280601A1

公开(公告)日：2021-09-09

申请号：US17022958

申请日：2020-09-16

Applicant: Kioxia Corporation

Inventor： Shota KASHIYAMA ,  Satoshi NAGASHIMA

IPC: H01L27/11582 ,  H01L27/11556

Abstract: A semiconductor memory device includes a first semiconductor layer that includes a first part extending in a first direction, a second part extending in the first direction, and a third part connected to the first and second parts. When a cross-sectional surface extending in second and third directions and including the third part is defined as a first cross-sectional surface, the third part has one side and the other side of an imaginary center line in the third direction in the first cross-sectional surface defined as first and second regions, the third part has maximum widths in the second direction in the first and second regions defined as first and second widths, and the third part has a width in the second direction on the imaginary center line defined as a third width, the third width is smaller than the first and second widths.

公开(公告)号：US20210280598A1

公开(公告)日：2021-09-09

申请号：US17324413

申请日：2021-05-19

Applicant: KIOXIA CORPORATION

Inventor： Satoshi NAGASHIMA

IPC: H01L27/11578 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11565 ,  H01L27/1157

Abstract: A memory device includes a first and second conductor respectively included in a first and second layer stack stacked in a first direction and separated from each other; a first and second portion of a semiconductor extending in the first direction between the first and the second layer stack, and separated from each other in same layer; a first film between the first conductor and the first portion; a second film between the second conductor and the second portion; a first insulator between the first conductor and the first film; a second insulator between the second conductor and the second film; a third insulator between the first insulator and the first film; and a fourth insulator between the second insulator and the second film. The third and fourth insulator have a higher dielectric constant than the first and second insulator.

公开(公告)号：US20210036000A1

公开(公告)日：2021-02-04

申请号：US16814517

申请日：2020-03-10

Applicant: Kioxia Corporation

Inventor： Naoya YOSHIMURA ,  Satoshi NAGASHIMA

IPC: H01L27/11556 ,  H01L27/11582 ,  G11C5/02 ,  G11C5/06

Abstract: A semiconductor memory device includes a first pillar. The first pillar includes a first portion and a second portion. The first portion includes a first semiconductor layer and a first insulating film on a side surface of the first semiconductor layer. The first pillar includes a first region that faces the first portion and a second region other than the first region. The second portion includes a first conductive film that is in contact with the first insulating film and a second insulating film. The second insulating film has a first thickness in a fourth direction within the second region and a second thickness in the second direction within the first region. The first thickness is greater than the second thickness.