利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

34 条记录 (耗时 0.027 秒)

    Soft magnetic alloy thin film with nitrogen-based amorphous phase
    11.
    发明授权
    Soft magnetic alloy thin film with nitrogen-based amorphous phase 失效
    软磁合金薄膜与氮基非晶相

    公开(公告)号：US5725685A

    公开(公告)日：1998-03-10

    申请号：US739352

    申请日：1996-10-29

    申请人： Yasuo Hayakawa ,  Akihiro Makino

    发明人： Yasuo Hayakawa ,  Akihiro Makino

    IPC分类号： C23C14/14 ,  C22C38/00 ,  C22C45/02 ,  H01F10/00 ,  H01F10/13 ,  H01F10/14 ,  H01F17/00 ,  H01F41/04 ,  H01F1/147

    CPC分类号： B82Y25/00 ,  H01F10/007 ,  H01F10/131 ,  H01F10/136 ,  H01F10/147 ,  H01F17/0013 ,  H01F41/046

    摘要： A soft magnetic alloy thin film includes a fine crystalline phase and an amorphous phase. The fine crystalline phase includes an average crystalline grain size of 10 nm or less in diameter and has body-centered cubic structure mainly composed of Fe. The amorphous phase has a nitrogen (N) compound as the main composition and occupies at least 50% of the structure of the thin film. An element M is incorporated at least in the amorphous phase, and includes at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, W, and rare earth metal elements. A plane-type magnetic device is made using this thin film.

    摘要翻译： 软磁性合金薄膜包括细晶相和非晶相。 细结晶相的直径平均晶粒尺寸为10nm以下，主要由Fe构成的体心立方结构。 非晶相具有氮（N）化合物作为主要成分，占薄膜结构的至少50％。 元素M至少包含在非晶相中，并且包括选自Ti，Zr，Hf，V，Nb，Ta，W和稀土金属元素中的至少一种元素。 使用该薄膜制造平面型磁性装置。

    Soft magnetic alloy thin film with nitrogen-based amorphous phase
    12.
    发明授权
    Soft magnetic alloy thin film with nitrogen-based amorphous phase 失效
    软磁合金薄膜与氮基非晶相

    公开(公告)号：US5656101A

    公开(公告)日：1997-08-12

    申请号：US412497

    申请日：1995-03-28

    申请人： Yasuo Hayakawa ,  Akihiro Makino

    发明人： Yasuo Hayakawa ,  Akihiro Makino

    IPC分类号： C23C14/14 ,  C22C38/00 ,  C22C45/02 ,  H01F10/00 ,  H01F10/13 ,  H01F10/14 ,  H01F17/00 ,  H01F41/04 ,  H01F1/147

    CPC分类号： B82Y25/00 ,  H01F10/007 ,  H01F10/131 ,  H01F10/136 ,  H01F10/147 ,  H01F17/0013 ,  H01F41/046

    摘要： A soft magnetic alloy thin film includes a fine crystalline phase and an amorphous phase. The fine crystalline phase includes an average crystalline grain size of 10 nm or less in diameter and has body-centered cubic structure mainly composed of Fe. The amorphous phase has a nitrogen (N) compound as the main composition and occupies at least 50% of the structure of the thin film. An element M is incorporated at least in the amorphous phase, and includes at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, W, and rare earth metal elements. A plane-type magnetic device is made using this thin film.

    摘要翻译： 软磁性合金薄膜包括细晶相和非晶相。 细结晶相的直径平均晶粒尺寸为10nm以下，主要由Fe构成的体心立方结构。 非晶相具有氮（N）化合物作为主要成分，占薄膜结构的至少50％。 元素M至少包含在非晶相中，并且包括选自Ti，Zr，Hf，V，Nb，Ta，W和稀土金属元素中的至少一种元素。 使用该薄膜制造平面型磁性装置。

    Tunneling magnetic sensing element having two-layered hard bias layer
    13.
    发明授权
    Tunneling magnetic sensing element having two-layered hard bias layer 有权
    具有双层硬偏置层的隧道式磁感应元件

    公开(公告)号：US08072712B2

    公开(公告)日：2011-12-06

    申请号：US12116499

    申请日：2008-05-07

    申请人： Masahlko Ishizone ,  Yasuo Hayakawa

    发明人： Masahlko Ishizone ,  Yasuo Hayakawa

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272

    摘要： At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed close to a free magnetic layer. A film thickness ratio of the first hard bias layer in a whole hard bias layer is from 35% to 75%. This stabilizes magnetization in the free magnetic layer to reduce asymmetry, thus enabling improvement in stability of reproducing characteristics including noise suppression.

    摘要翻译： 在元件部分的两侧，具有较高剩余磁化强度Mr的第一硬偏置层和具有较高矫顽力Hc的第二硬偏置层从该底部依次沉积，第一硬偏置层的一端封闭 靠近自由磁性层。 整个硬偏压层中的第一硬偏压层的膜厚比为35％〜75％。 这使得自由磁性层中的磁化稳定化以减少不对称性，从而能够改善包括噪声抑制在内的再现特性的稳定性。

    CPP-TYPE THIN-FILM MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF
    14.
    发明申请
    CPP-TYPE THIN-FILM MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF 审中-公开
    CPP型薄膜磁头及其制造方法

    公开(公告)号：US20070115595A1

    公开(公告)日：2007-05-24

    申请号：US11558345

    申请日：2006-11-09

    申请人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

    发明人： Kenji Honda ,  Naohiro Ishibashi ,  Daigo Aoki ,  Yasuo Hayakawa ,  Yoshihiro Nishiyama ,  Toshihiro Kobayashi

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/398

    摘要： a CCP-type thin-film magnetic head and a manufacturing method thereof are provided. The CCP-type thin-film magnetic head includes a thin-film magnetic head element formed between the upper shield layer and the lower shield layer, and a side fill gap layer securing the insulating property, which is formed from both end faces of the thin-film magnetic head element, wherein a top surface of the lower shield layer is formed in a non-flat surface having a convex portion disposed at a center in a track width direction and a concave portion disposed at both sides in a track width direction of the convex portion, the thin-film magnetic head element is formed on the convex portion, and an buried gap layer contacting the side fill gap layer is formed in the concave portion.

    摘要翻译： 提供了一种CCP型薄膜磁头及其制造方法。 CCP型薄膜磁头包括形成在上屏蔽层和下屏蔽层之间的薄膜磁头元件，以及确保绝缘性能的侧填充间隙层，其由薄的两个端面形成 所述下屏蔽层的上表面形成在具有设置在轨道宽度方向的中心的凸部的非平坦面和设置在轨道宽度方向的两侧的凹部 凸部，薄膜磁头元件形成在凸部上，并且在凹部中形成与侧填充间隙层接触的掩埋间隙层。

    Thin film magnetic head having a gap layer with improved thermal conductivity
    17.
    发明授权
    Thin film magnetic head having a gap layer with improved thermal conductivity 失效
    薄膜磁头具有具有改善的导热性的间隙层

    公开(公告)号：US06252749B1

    公开(公告)日：2001-06-26

    申请号：US09154553

    申请日：1998-09-16

    申请人： Yasuo Hayakawa

    发明人： Yasuo Hayakawa

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10S977/934

    摘要： A thin film magnetic head comprises a lower gap layer composed of an adhesion layer formed of Al2O3 or the like, an AlN film having a high thermal conductivity and a protective layer formed of Al2O3 or the like. Since the lower gap layer comprises the AlN film, it has an extremely high thermal conductivity as compared to conventional equivalents. Accordingly, heat generated from a magnetroresistive element layer can be escaped through the lower gap layer to a lower shield layer so as to inhibit the temperature of element from elevating and to obtain a satisfactory regeneration sensitivity.

    摘要翻译： 薄膜磁头包括由Al 2 O 3等形成的粘附层构成的下间隙层，具有高导热性的AlN膜和由Al 2 O 3等形成的保护层。 由于下间隙层包含AlN膜，与传统的等效物相比，其具有极高的导热性。 因此，从磁阻元件层产生的热可以通过下间隙层逃逸到下屏蔽层，以便抑制元件的温度升高并获得令人满意的再生灵敏度。

    Thin film magnetic head comprising SiON film
    20.
    发明授权
    Thin film magnetic head comprising SiON film 失效
    包括SiON薄膜的薄膜磁头

    公开(公告)号：US06885526B2

    公开(公告)日：2005-04-26

    申请号：US09834085

    申请日：2001-04-11

    申请人： Yoshihiro Nishiyama ,  Yasuo Hayakawa

    发明人： Yoshihiro Nishiyama ,  Yasuo Hayakawa

    IPC分类号： G11B5/235 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127

    CPC分类号： G11B5/3903 ,  G11B5/235 ,  G11B5/3109 ,  Y10T29/49032

    摘要： A thin film magnetic head includes a gap layer which may be made of a SiON film to increase Young's modulus E to about 123.3 (GPa) or more. As a result, the gap layer is less pushed from a surface facing a recording medium in the height direction during lapping of the surface facing the recording medium, thereby decreasing the amount of protrusion of the gap layer from the facing surface as compared with a conventional magnetic head.

    摘要翻译： 薄膜磁头包括可由SiON膜制成的间隙层，以将杨氏模量E提高到约123.3（GPa）以上。 结果，在与记录介质相对的表面的研磨期间，间隙层在与记录介质相对的记录介质的表面上较少地被推压，从而与常规的相比，减少了间隙层与相对表面的突出量 磁头。