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公开(公告)号：US08546948B2
公开(公告)日：2013-10-01
申请号：US13353261
申请日：2012-01-18
Applicant: Daigo Aoki
Inventor： Daigo Aoki
CPC classification number: G01L9/0054 , G01L9/0042 , G01R31/2884 , H01L24/05 , H01L24/06 , H01L2224/02166 , H01L2224/04042 , H01L2224/05 , H01L2224/05554 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079
Abstract: A silicon structure includes a silicon substrate having an electric element; a wiring conductor and a bonding pad, connecting the electric element and an external circuit; a protective layer disposed on the silicon substrate; and a pad opening pattern provided in the protective layer to exposed the bonding pad, wherein a probe mark position and a wire bonding position differ, without increasing the size of the bonding pad in plan view. A substrate exposure part, which is not covered with the protective layer, is provided at part of an outer edge of the bonding pad disposed inside the pad opening pattern in the protective film, and the wiring conductor is not exposed through substrate exposure part.
Abstract translation: 硅结构包括具有电元件的硅衬底; 连接电气元件和外部电路的布线导体和接合焊盘; 设置在所述硅基板上的保护层; 以及设置在保护层中以暴露接合焊盘的焊盘开口图案，其中探针标记位置和引线接合位置不同，而在平面图中不增加焊盘的尺寸。 未被保护层覆盖的基板曝光部设置在设置在保护膜的焊盘开口图案内部的接合焊盘的外缘的一部分，并且布线导体不通过基板曝光部露出。
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公开(公告)号：US07943275B2
公开(公告)日：2011-05-17
申请号：US11867820
申请日：2007-10-05
Applicant: Hironori Kobayashi , Manabu Yamamoto , Daigo Aoki , Hironori Kamiyama , Shinichi Hikosaka , Mitsuhiro Kashiwabara
Inventor： Hironori Kobayashi , Manabu Yamamoto , Daigo Aoki , Hironori Kamiyama , Shinichi Hikosaka , Mitsuhiro Kashiwabara
IPC: G02B5/20
CPC classification number: B41N1/006 , B29D11/00365 , B41C1/1041 , G02B3/0012 , G02B3/0056 , G02B5/201 , G03F7/0005 , G03F7/0007 , G03F7/001 , G03F7/0043 , G03F7/0757 , G03F7/095 , G03F7/11
Abstract: A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.
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公开(公告)号：US07633084B2
公开(公告)日：2009-12-15
申请号：US11093675
申请日：2005-03-30
Applicant: Junji Kido , Daigo Aoki
Inventor： Junji Kido , Daigo Aoki
CPC classification number: H01L51/5296 , H01L33/405 , H01L51/0508 , H01L51/52 , H01L2251/5315
Abstract: A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistor 11 of a vertical FET structure comprising: on a substrate 12; a source electrode 13; a hole transporting layer 14 in which a slit-shaped gate electrode 15 is embedded; an equipotential layer 16; light emitting layer 17; and a transparent or semitransparent drain electrode 18, provided in this order. In this light emitting transistor, the drain electrode 18 provided on the opposite side of the gate electrode 15, viewing from the light emitting layer 17, is transparent or semitransparent. Therefore, light generated in the light emitting layer 17 can be taken out from the drain electrode side. An electron transporting layer 19 can be provided between the light emitting layer 17 and the drain electrode 18.
Abstract translation: 本发明的主要目的是提供一种具有有机EL元件结构和垂直FET结构的静电感应发光晶体管，其可以避免光的屏蔽和栅极屏蔽电场的问题 电极。 上述目的通过提供一种垂直FET结构的发光晶体管11实现，包括：在基板12上; 源电极13; 嵌入有狭缝状的栅极电极15的空穴传输层14; 等电位层16; 发光层17; 以及依次设置的透明或半透明的漏电极18。 在该发光晶体管中，设置在栅电极15的与发光层17观察相反的一侧的漏电极18是透明的或半透明的。 因此，可以从漏极侧取出在发光层17中产生的光。 电子传输层19可以设置在发光层17和漏电极18之间。
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公开(公告)号：US20080254394A1
公开(公告)日：2008-10-16
申请号：US12122833
申请日：2008-05-19
Applicant: Hironori KOBAYASHI , Manabu YAMAMOTO , Daigo AOKI , Hironori KAMIYAMA , Shinichi HIKOSAKA , Mitsuhiro KASHIWABARA
Inventor： Hironori KOBAYASHI , Manabu YAMAMOTO , Daigo AOKI , Hironori KAMIYAMA , Shinichi HIKOSAKA , Mitsuhiro KASHIWABARA
IPC: G03F7/20
CPC classification number: B41N1/006 , B29D11/00365 , B41C1/1041 , G02B3/0012 , G02B3/0056 , G02B5/201 , G03F7/0005 , G03F7/0007 , G03F7/001 , G03F7/0043 , G03F7/0757 , G03F7/095 , G03F7/11
Abstract: A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.
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公开(公告)号：US07393413B2
公开(公告)日：2008-07-01
申请号：US10547368
申请日：2004-03-05
Applicant: Junji Kido , Noritaka Ishiyama , Daigo Aoki , Norikatsu Nakamura
Inventor： Junji Kido , Noritaka Ishiyama , Daigo Aoki , Norikatsu Nakamura
CPC classification number: H01L51/0004 , H01L51/56 , Y02E10/549 , Y02P70/521
Abstract: A coating apparatus 10 includes a base 11, a substrate support stage unit 2 mounted on the base 11 and capable of fixedly supporting a substrate 1, a coating unit 3 mounted on the base 11 and capable of discharging a coating material onto a substrate 1 fixedly supported on the substrate support stage unit 2, and a motor unit 4 for driving at least either the substrate support stage unit 2 or the coating unit 3 for sliding on the base 11. The motor unit 3 has a stator assembly 22 on the base 11. The stator assembly 22 includes a plurality of magnets 31 linearly arranged such that opposite magnetic polarities of the magnets alternately change, and a pair of magnet holding members 37 and 38 for linearly pressing the magnets 31 together from both the ends of the magnets.
Abstract translation: 涂覆装置10包括基座11，安装在基座11上并能够固定地支撑基板1的基板支撑台单元2，安装在基座11上并能够将涂层材料固定地放置到基板1上的涂覆单元3 支撑在基板支撑台单元2上的马达单元4和用于驱动基板支撑台单元2或涂覆单元3中的至少一个以在基座11上滑动的马达单元4。 马达单元3在基座11上具有定子组件22。 定子组件22包括多个磁体31，这些磁体直线地布置成使得磁体的相反的磁极性交替变化，以及一对磁体保持构件37和38，用于从磁体的两端线性地按压磁体31。
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Patent Agency Ranking
6.发明申请MAGNETIC HEAD DEVICE PROVIDED WITH LEAD ELECTRODE ELECTRICALLY CONNECTED TO UPPER SHIELD LAYER AND LOWER SHIELD LAYER 有权电磁头装置与铅电极电连接到上面的屏蔽层和较低的屏蔽层公开(公告)号：US20070127163A1
公开(公告)日：2007-06-07
申请号：US11567645
申请日：2006-12-06
Applicant: Yoshihiro Nishiyama , Daigo Aoki , Toru Takahashi
Inventor： Yoshihiro Nishiyama , Daigo Aoki , Toru Takahashi
CPC classification number: G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
Abstract: A lower shield layer and an upper shield layer are formed to have a planar shape, and a detecting element is provided between the lower shield layer and the upper shield layer. End faces of the upper shield layer may extend farther in a depthwise direction from a surface facing a recording medium than end faces of the lower shield layer. A lower conductive electrode may be disposed directly adjacent to a facing inner surface of the lower shield layer. An upper conductive electrode may be disposed adjacent to a portion of the upper shield layer. Therefore, the lower shield layer and the upper conductive electrode may be insulated from each other.
Abstract translation: 下屏蔽层和上屏蔽层形成为平面形状，并且在下屏蔽层和上屏蔽层之间设置检测元件。 上屏蔽层的端面可以从与下屏蔽层的端面相对的面向记录介质的表面在深度方向上延伸得更远。 下导电电极可以直接邻近下屏蔽层的相对的内表面设置。 上导电电极可以设置成与上屏蔽层的一部分相邻。 因此，下屏蔽层和上导电电极可以彼此绝缘。
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7.发明申请MAGNETIC SENSING ELEMENT HAVING REACTIVE-ION-ETCHING STOP LAYER AND PROCESS FOR PRODUCING SAME 有权具有反应性离子蚀刻停止层的磁感应元件及其制造方法公开(公告)号：US20060291097A1
公开(公告)日：2006-12-28
申请号：US11424495
申请日：2006-06-15
Applicant: Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
Inventor： Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
CPC classification number: G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , H01F10/3254 , H01F41/308
Abstract: A magnetic sensing element including a laminate and a bias layer is provided. A first reactive-ion-etching (RIE) stop layer is disposed on a free magnetic layer. Second RIE stop layers are disposed on bias layers. The first and second RIE stop layers function as stop layers when layers on the first and second RIE stop layers are removed by reactive ion etching in a production process. Reactive ion etching is completed when the first RIE stop layer and the second RIE stop layers are exposed, the first and second RIE stop layers being disposed at almost the same height. Also provided is a process for producing the magnetic sensing element.
Abstract translation: 提供了包括层叠体和偏置层的磁感应元件。 第一反应离子蚀刻（RIE）停止层设置在自由磁性层上。 第二RIE停止层设置在偏置层上。 当生产过程中通过反应离子蚀刻去除第一和第二RIE停止层上的层时，第一和第二RIE停止层用作停止层。 当第一RIE停止层和第二RIE停止层暴露时，第一和第二RIE停止层设置在几乎相同的高度处，完成反应离子蚀刻。 还提供了一种用于制造磁感测元件的方法。
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公开(公告)号：US20050218412A1
公开(公告)日：2005-10-06
申请号：US11093675
申请日：2005-03-30
Applicant: Junji Kido , Daigo Aoki
Inventor： Junji Kido , Daigo Aoki
CPC classification number: H01L51/5296 , H01L33/405 , H01L51/0508 , H01L51/52 , H01L2251/5315
Abstract: A main object of the present invention is to provide a static induction light emitting transistor having an organic EL element structure and a vertical FET structure which is possible to avoid a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. The above object is achieved by providing a light emitting transistor 11 of a vertical FET structure comprising: on a substrate 12; a source electrode 13; a hole transporting layer 14 in which a slit-shaped gate electrode 15 is embedded; an equipotential layer 16; light emitting layer 17; and a transparent or semitransparent drain electrode 18, provided in this order. In this light emitting transistor, the drain electrode 18 provided on the opposite side of the gate electrode 15, viewing from the light emitting layer 17, is transparent or semitransparent. Therefore, light generated in the light emitting layer 17 can be taken out from the drain electrode side. An electron transporting layer 19 can be provided between the light emitting layer 17 and the drain electrode 18.
Abstract translation: 本发明的主要目的是提供一种具有有机EL元件结构和垂直FET结构的静电感应发光晶体管，其可以避免光的屏蔽和栅极屏蔽电场的问题 电极。 上述目的通过提供一种垂直FET结构的发光晶体管11实现，包括：在基板12上; 源电极13; 嵌入有狭缝状的栅极电极15的空穴传输层14; 等电位层16; 发光层17; 以及依次设置的透明或半透明的漏电极18。 在该发光晶体管中，设置在栅电极15的与发光层17观察相反的一侧的漏电极18是透明的或半透明的。 因此，可以从漏极侧取出在发光层17中产生的光。 电子传输层19可以设置在发光层17和漏电极18之间。
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公开(公告)号：US06844998B2
公开(公告)日：2005-01-18
申请号：US10103359
申请日：2002-03-20
Applicant: Daigo Aoki , Kenji Honda , Kiyoshi Sato , Naoya Hasegawa , Yukie Nakazawa
Inventor： Daigo Aoki , Kenji Honda , Kiyoshi Sato , Naoya Hasegawa , Yukie Nakazawa
CPC classification number: G11B5/3903 , H01L43/08
Abstract: Assuming that a distance between an upper shield layer and a lower shield layer in an area, which overlaps only a first electrode layer, but does not overlap a second electrode layer, is G1s, and a distance between the upper shield layer and the lower shield layer at a position in alignment with a center of a multilayered film is G1c, a difference in value between G1s and G1c is set to be not larger than a predetermined value, whereby an effective track (read) width can be reduced.
Abstract translation: 假设在仅与第一电极层重叠但不与第二电极层重叠的区域中的上屏蔽层和下屏蔽层之间的距离为G1s，并且上屏蔽层和下屏蔽层之间的距离 在与多层膜的中心对准的位置处的层是G1c，G1s和G1c之间的值之差被设定为不大于预定值，从而可以减少有效的轨迹（读取）宽度。
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公开(公告)号：US06650047B2
公开(公告)日：2003-11-18
申请号：US10337307
申请日：2003-01-07
Applicant: Daigo Aoki , Masato Okabe , Hironori Kobayashi , Manabu Yamamoto , Tatsuya Miyoshi , Koji Arai , Hiroshi Kishimoto
Inventor： Daigo Aoki , Masato Okabe , Hironori Kobayashi , Manabu Yamamoto , Tatsuya Miyoshi , Koji Arai , Hiroshi Kishimoto
IPC: H01J162
CPC classification number: H01L51/0014 , H01L27/3239 , H01L27/3241 , H01L27/3281 , H01L51/0003 , H01L51/0023 , H01L51/56
Abstract: An EL device comprising a first electrode, an EL layer formed on the first electrode, and a second electrode formed on the EL layer, wherein at least one layer of a material whose wettability changes when light is applied thereto is formed. The invention provides EL devices that can be simply produced, and processes for producing the same.
Abstract translation: 一种EL器件，包括第一电极，形成在第一电极上的EL层和形成在EL层上的第二电极，其中至少一层当其上施加光时润湿性改变的材料层。 本发明提供了可简单制造的EL器件及其制造方法。
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