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    CONNECTIONS BETWEEN LAMINATED HEATER AND HEATER VOLTAGE INPUTS
    11.
    发明申请
    CONNECTIONS BETWEEN LAMINATED HEATER AND HEATER VOLTAGE INPUTS 审中-公开

    公开(公告)号：US20170332481A1

    公开(公告)日：2017-11-16

    申请号：US15586203

    申请日：2017-05-03

    Applicant: Lam Research Corporation

    Inventor： Yuma Ohkura ,  Darrell Ehrlich ,  Eric A. Pape

    IPC: H05K1/02 ,  H05B3/26 ,  H05K1/03 ,  H05K1/11

    Abstract: A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, a heating layer arranged on the baseplate, a ceramic layer arranged on the heating layer, and wiring provided through the baseplate, the heating layer, and into the ceramic layer in a first zone of the plurality of heating zones. An electrical connection is routed from the wiring in the first zone, across the ceramic layer to a second zone of the plurality of heating zones, and to a heating element in the heating layer in the second zone.

    Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output
    12.
    发明授权
    Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output 有权
    计算热控制元件阵列的功率输入以实现二维温度输出

    公开(公告)号：US09435692B2

    公开(公告)日：2016-09-06

    申请号：US14173149

    申请日：2014-02-05

    Applicant: Lam Research Corporation

    Inventor： Ole Waldmann ,  Eric A. Pape ,  Robert Griffith O'Neill ,  Francisco Martinez

    IPC: G01K15/00 ,  G01J5/02 ,  H01L21/67 ,  H01L21/683

    CPC classification number: G01J5/02 ,  G01J5/0007 ,  G01J5/025 ,  G01J5/10 ,  G01J2005/0048 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

    Abstract: A method for calculating power input to at least one thermal control element of an electrostatic chuck includes: setting the at least one thermal control element to a first predetermined power level; measuring a first temperature of the at least one thermal control element when the at least one thermal control element is powered at the first predetermined power level; setting the at least one thermal control element to a second predetermined power level; measuring a second temperature of the at least one thermal control element when the at least one thermal control element is powered at the second predetermined power level; calculating a difference between the first temperature and the second temperature; calculating a system response of the at least one thermal control element based on the difference; inverting the system response; and calibrating the at least one thermal control element based on the inverted system response.

    Abstract translation: 一种用于计算静电卡盘的至少一个热控元件的功率输入的方法，包括：将所述至少一个热控制元件设置为第一预定功率水平; 当所述至少一个热控元件以所述第一预定功率水平供电时，测量所述至少一个热控元件的第一温度; 将所述至少一个热控制元件设置到第二预定功率水平; 当所述至少一个热控元件以所述第二预定功率电平供电时，测量所述至少一个热控元件的第二温度; 计算第一温度和第二温度之间的差; 基于所述差异来计算所述至少一个热控制元件的系统响应; 反转系统响应; 以及基于所述反向系统响应来校准所述至少一个热控制元件。

    Two-stage pin lifter for de-chuck operations
    13.
    发明授权
    Two-stage pin lifter for de-chuck operations 有权

    公开(公告)号：US11430688B2

    公开(公告)日：2022-08-30

    申请号：US16121229

    申请日：2018-09-04

    Applicant: Lam Research Corporation

    Inventor： Siyuan Tian ,  Eric A. Pape

    IPC: H01L21/687 ,  H01L21/67 ,  H01L21/683

    Abstract: Various embodiments include apparatuses to raise and lower substrates, as used in the semiconductor and allied industries, toward or away from a substrate-holding mechanism (e.g., such as an electrostatic chuck (ESC). In a specific embodiment, a substrate lift-mechanism includes a number of pins to position the substrate above a substrate-holding device. Mid-position sensors are respectively coupled to a corresponding pin. The mid-position sensors monitor an intermediate position of the corresponding pin between a maximum position and a minimum position. Other apparatuses and systems are disclosed.

    Matched TCR joule heater designs for electrostatic chucks
    15.
    发明授权
    Matched TCR joule heater designs for electrostatic chucks 有权

    公开(公告)号：US10707110B2

    公开(公告)日：2020-07-07

    申请号：US15292688

    申请日：2016-10-13

    Applicant: Lam Research Corporation

    Inventor： Eric A. Pape

    IPC: H01L21/683 ,  H01L21/67

    Abstract: A substrate support for supporting a substrate in a substrate processing system includes a plurality of thermal elements. The thermal elements are arranged in one or more thermal zones, and each of the thermal zones includes at least one of the thermal elements. Each of the thermal elements includes a first resistive material having a positive thermal coefficient of resistance and a second resistive material having a negative thermal coefficient of resistance. The second resistive material is electrically connected to the first resistive material. At least one of the first resistive material and the second resistive material of each of the thermal elements is electrically connected to a power supply to receive power, and each of the thermal elements heats a respective one of the thermal zones based on the received power. At least one ceramic layer is arranged adjacent to the thermal elements.

    System and method for substrate support feed-forward temperature control based on RF power
    16.
    发明授权
    System and method for substrate support feed-forward temperature control based on RF power 有权

    公开(公告)号：US10522377B2

    公开(公告)日：2019-12-31

    申请号：US15200405

    申请日：2016-07-01

    Applicant: Lam Research Corporation

    Inventor： Tao Zhang ,  Siyuan Tian ,  Eric A. Pape ,  Jorge Jose Zaninovich

    IPC: C23C16/00 ,  H01L21/306 ,  H01L21/673 ,  H01L21/67 ,  H01J37/32 ,  H01L23/34 ,  C23C16/505 ,  H01L21/683

    Abstract: A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.

    Method of determining thermal stability of a substrate support assembly
    18.
    发明授权
    Method of determining thermal stability of a substrate support assembly 有权

    公开(公告)号：US09716022B2

    公开(公告)日：2017-07-25

    申请号：US14109020

    申请日：2013-12-17

    Applicant: Lam Research Corporation

    Inventor： Ole Waldmann ,  Eric A. Pape ,  Carlos Leal-Verdugo ,  Keith William Gaff

    IPC: G05D23/19 ,  G05B19/418 ,  H01L21/67

    CPC classification number: G05B19/418 ,  H01L21/67103 ,  H01L21/67248

    Abstract: A method of determining thermal stability of an upper surface of a substrate support assembly comprises recording time resolved pre-process temperature data of the substrate before performing a plasma processing process while powering an array of thermal control elements to achieve a desired spatial and temporal temperature of the upper surface. A substrate is processed while powering the array of thermal control elements to achieve a desired spatial and temporal temperature of the upper surface of the assembly, and time resolved post-process temperature data of the assembly is recorded after processing the substrate. The post-process temperature data is recorded while powering the thermal control elements to achieve a desired spatial and temporal temperature of the upper surface. The post-process temperature data is compared to the pre-process temperature data to determine whether the data is within a desired tolerance range.

    MULTI-PLANE HEATER FOR SEMICONDUCTOR SUBSTRATE SUPPORT
    19.
    发明申请
    MULTI-PLANE HEATER FOR SEMICONDUCTOR SUBSTRATE SUPPORT 审中-公开

    公开(公告)号：US20170167790A1

    公开(公告)日：2017-06-15

    申请号：US14966198

    申请日：2015-12-11

    Applicant: Lam Research Corporation

    Inventor： Keith William Gaff ,  Benny Wu ,  Eric A. Pape

    IPC: F27B17/00 ,  F27D11/02 ,  H05B3/00 ,  H05B3/26 ,  H01L21/683 ,  H01L21/67

    Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a multi-plane heater such as a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate. The multi-plane heater includes at least one pair of vertically offset heating elements connected in series or parallel to control heating output in a heating zone on the substrate support. The thermal control elements can be powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones.

    Ceramic baseplate with channels having non-square corners
    20.
    发明授权
    Ceramic baseplate with channels having non-square corners 有权

    公开(公告)号：US11133211B2

    公开(公告)日：2021-09-28

    申请号：US16108416

    申请日：2018-08-22

    Applicant: Lam Research Corporation

    Inventor： Feng Wang ,  Eric A. Pape

    IPC: H01L21/683 ,  H01L21/67

    Abstract: A substrate support includes: a first plate configured to support a substrate; and a second plate that is connected to the first plate. The second plate includes at least one of: an internal coolant channel configured to receive coolant; and an internal gas channel configured to receive gas. The at least one of the internal coolant channel and the internal gas channel includes one of: chamfered internal corners; and staired internal corners.

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