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    CONTROL OF PULSING FREQUENCIES AND DUTY CYCLES OF PARAMETERS OF RF SIGNALS
    12.
    发明公开
    CONTROL OF PULSING FREQUENCIES AND DUTY CYCLES OF PARAMETERS OF RF SIGNALS 审中-公开

    公开(公告)号：US20230223236A1

    公开(公告)日：2023-07-13

    申请号：US18009308

    申请日：2021-06-08

    Applicant: Lam Research Corporation

    Inventor： Tom A. Kamp ,  Yuhou Wang ,  Michael John Martin

    IPC: H01J37/32

    CPC classification number: H01J37/32165 ,  H01J37/32146 ,  H01J37/32174

    Abstract: A method for pulsing is described. The method includes generating a first radio frequency (RF) signal, and pulsing a parameter of the first RF signal between a first parameter level and a second parameter level at a pulsing frequency during a cycle of a digital pulsed signal. The method further includes generating a second RF signal, and pulsing a parameter of the second RF signal at a higher pulsing frequency than the pulsing frequency of the parameter of the first RF signal during the cycle. During the cycle, a start time of pulsing the parameter of the first RF signal is synchronized with a start time of pulsing the parameter of the second RF signal and an end time of pulsing the parameter of the first RF signal is synchronized with an end time of pulsing the parameter of the second RF signal.

    MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION
    14.
    发明申请
    MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION 有权

    公开(公告)号：US20220117074A1

    公开(公告)日：2022-04-14

    申请号：US17558332

    申请日：2021-12-21

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Ricky Marsh ,  Alex Paterson

    IPC: H05H1/46 ,  H01J37/32 ,  H03F3/217

    Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

    AUXILIARY CIRCUIT IN RF MATCHING NETWORK FOR FREQUENCY TUNING ASSISTED DUAL-LEVEL PULSING
    15.
    发明申请
    AUXILIARY CIRCUIT IN RF MATCHING NETWORK FOR FREQUENCY TUNING ASSISTED DUAL-LEVEL PULSING 审中-公开

    公开(公告)号：US20180294566A1

    公开(公告)日：2018-10-11

    申请号：US15942629

    申请日：2018-04-02

    Applicant: Lam Research Corporation

    Inventor： Yuhou Wang ,  Arthur H. Sato ,  Ying Wu ,  Alexander Miller Paterson

    IPC: H01Q5/335

    Abstract: A radio frequency (RF) matching circuit control system includes an RF matching circuit including a plurality of tunable components. The RF matching circuit is configured to receive an input signal including at least two pulsing levels from an RF generator, provide an output signal to a load based on the input signal, and match an impedance associated with the input signal to impedances of the load. A controller is configured to determine respective impedances of the load for the at least two pulsing levels of the input signal and adjust operating parameters of the plurality of tunable components to align a frequency tuning range of the RF matching circuit with the respective impedances of the load for the at least two pulsing levels to match the impedance associated with the input signal to the respective impedances.

    MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION
    16.
    发明申请
    MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION 有权

    公开(公告)号：US20250106976A1

    公开(公告)日：2025-03-27

    申请号：US18974593

    申请日：2024-12-09

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Ricky Marsh ,  Alex Paterson

    IPC: H05H1/46 ,  H01J37/32 ,  H03F3/217

    Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

    A METHOD AND APPARATUS FOR ENHANCING ION ENERGY AND REDUCING ION ENERGY SPREAD IN AN INDUCTIVELY COUPLED PLASMA
    18.
    发明申请
    A METHOD AND APPARATUS FOR ENHANCING ION ENERGY AND REDUCING ION ENERGY SPREAD IN AN INDUCTIVELY COUPLED PLASMA 有权

    公开(公告)号：US20250046572A1

    公开(公告)日：2025-02-06

    申请号：US18693940

    申请日：2022-09-22

    Applicant: Lam Research Corporation

    Inventor： Juline Shoeb ,  Myeong Yeol Choi ,  Alexander Miller Paterson ,  Yuhou Wang

    IPC: H01J37/32

    Abstract: A method for operating a plasma chamber to increase ion energy and decrease angular spread of ions during an etch operation is described. Method includes placing a substrate on an electrostatic chuck within the plasma chamber, wherein the electrostatic chuck is electrically coupled to a node. Method further includes forming a plasma in the plasma chamber, where the plasma produces a sheath with a first sheath voltage. The method further includes increasing the first sheath voltage to a second sheath voltage by applying a non-sinusoidal voltage at the electrostatic chuck and by applying a sinusoidal voltage at the electrostatic chuck, where a sum of the non-sinusoidal voltage and the sinusoidal voltage creates a voltage response on the electrostatic chuck that effectuates a change in a spread in ion energy at the wafer.

    Dual-frequency, direct-drive inductively coupled plasma source
    19.
    发明授权
    Dual-frequency, direct-drive inductively coupled plasma source 有权

    公开(公告)号：US12165841B2

    公开(公告)日：2024-12-10

    申请号：US17606686

    申请日：2020-04-24

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Alexander Miller Paterson

    IPC: H01J37/32

    Abstract: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

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